IRIS
FANFONI, MASSIMO
 Distribuzione geografica
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Continente #
NA - Nord America 45.592
EU - Europa 5.448
AS - Asia 4.432
SA - Sud America 632
AF - Africa 59
Continente sconosciuto - Info sul continente non disponibili 18
OC - Oceania 13
Totale 56.194
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Nazione #
US - Stati Uniti d'America 45.426
SG - Singapore 2.312
IT - Italia 1.923
CN - Cina 831
UA - Ucraina 641
DE - Germania 623
RU - Federazione Russa 532
BR - Brasile 480
HK - Hong Kong 394
IE - Irlanda 384
SE - Svezia 335
VN - Vietnam 329
FR - Francia 276
GB - Regno Unito 273
FI - Finlandia 174
JP - Giappone 141
KR - Corea 127
NL - Olanda 111
CA - Canada 79
MX - Messico 63
IN - India 52
AR - Argentina 37
BE - Belgio 33
CO - Colombia 33
EC - Ecuador 32
PL - Polonia 30
UZ - Uzbekistan 28
IQ - Iraq 27
ES - Italia 24
ID - Indonesia 24
TR - Turchia 24
BD - Bangladesh 21
EU - Europa 17
IL - Israele 16
ZA - Sudafrica 16
PH - Filippine 15
RO - Romania 14
LT - Lituania 13
PE - Perù 13
PK - Pakistan 13
CZ - Repubblica Ceca 12
MY - Malesia 12
VE - Venezuela 12
AU - Australia 11
AT - Austria 10
CL - Cile 10
MA - Marocco 10
GR - Grecia 8
TH - Thailandia 8
TW - Taiwan 8
SA - Arabia Saudita 7
TN - Tunisia 7
EG - Egitto 6
IR - Iran 6
JO - Giordania 6
KZ - Kazakistan 6
NP - Nepal 6
PY - Paraguay 6
UY - Uruguay 6
DO - Repubblica Dominicana 5
HU - Ungheria 5
KE - Kenya 5
MD - Moldavia 5
AE - Emirati Arabi Uniti 4
CH - Svizzera 4
ET - Etiopia 4
JM - Giamaica 4
PT - Portogallo 4
BG - Bulgaria 3
BO - Bolivia 3
CI - Costa d'Avorio 3
CR - Costa Rica 3
DK - Danimarca 3
DZ - Algeria 3
LB - Libano 3
OM - Oman 3
SV - El Salvador 3
AZ - Azerbaigian 2
GE - Georgia 2
HN - Honduras 2
KW - Kuwait 2
NZ - Nuova Zelanda 2
SC - Seychelles 2
SI - Slovenia 2
TT - Trinidad e Tobago 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AL - Albania 1
AM - Armenia 1
BB - Barbados 1
BS - Bahamas 1
BY - Bielorussia 1
DM - Dominica 1
EE - Estonia 1
KG - Kirghizistan 1
LK - Sri Lanka 1
LU - Lussemburgo 1
LV - Lettonia 1
MU - Mauritius 1
NI - Nicaragua 1
NO - Norvegia 1
Totale 56.191
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Città #
Woodbridge 13.159
Wilmington 11.633
Houston 10.947
Fairfield 1.254
Ann Arbor 1.185
Singapore 1.067
Ashburn 792
Chandler 650
Jacksonville 562
Seattle 523
Cambridge 412
San Jose 400
Dublin 379
Hong Kong 376
Beijing 360
Rome 298
Medford 286
New York 229
Dearborn 224
Santa Clara 199
Milan 160
Council Bluffs 154
The Dalles 145
Lawrence 136
Los Angeles 116
Tokyo 108
Ho Chi Minh City 96
Mülheim 96
Moscow 87
Buffalo 82
Hanoi 80
Menlo Park 71
San Diego 66
São Paulo 59
Boardman 58
San Mateo 55
Naples 50
Redwood City 48
Munich 43
Dallas 42
Lauterbourg 42
Florence 35
Helsinki 33
Brussels 31
Mountain View 31
Nanjing 27
Verona 27
University Park 26
Zhengzhou 26
Hefei 25
London 25
Montreal 25
Chicago 24
Norwalk 24
Toronto 24
Guangzhou 23
Bologna 22
Turin 22
Frankfurt am Main 20
Kunming 19
Atlanta 18
Bari 18
Falls Church 18
Orem 18
Phoenix 17
Redondo Beach 16
Chennai 15
Haiphong 15
Nürnberg 15
Stockholm 15
Warsaw 15
Nuremberg 14
Palo Alto 14
Turku 14
Indiana 13
Mexico City 13
Da Nang 12
Genoa 12
Padova 12
Saint Petersburg 12
San Francisco 12
Shanghai 12
Tappahannock 12
Auburn Hills 11
Brescia 11
Lappeenranta 11
Quito 11
Washington 11
Baghdad 10
Belo Horizonte 10
Jakarta 10
Kraków 10
Palermo 10
Rio de Janeiro 10
Brno 9
Brooklyn 9
Catania 9
Johannesburg 9
Poplar 9
Treviso 9
Totale 47.719
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Nome #
Perché il logaritmo della somma non è uguale alla somma dei logaritmi: gli operatori lineari 1.483
Il principio di Huygens Fresnel e la diffrazione 760
Size-dependent reversal of the elastic interaction energy between misfit nanostructures 613
Atomi,Molecole e Solidi: Esercizi risolti 605
The Unexpected Role of Arsenic in Driving the Selective Growth of InAs Quantum Dots on GaAs 599
Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001) 543
2D Voronoi tessellation generated by lines and belts of dots 510
ArF excimer laser deposited tin oxide films studied by "in situ" surface diagnostics and by synchrotron radiation induced UV photoemission 506
Electronic anisotropy of the GaAs(001) surface studied by energy loss spectroscopy 489
Demonstration of Avrami's kinetics: Connection with rate equations for clustering on surfaces 489
Impingement factor in the case of phase transformations governed by spatially correlated nucleation 487
A Highly Emissive Water-Soluble Phosphorus Corrole 487
XPS and STM study of Mn incorporation on the GaAs(001) surface 486
Idrogeno ed elio : atomi di storia 485
Avrami's kinetic approach for describing Volmer Weber growth mode at solid surfaces studied via PES and AES 479
Comparative study of approaches based on the differential critical region and correlation functions in modeling phase-transformation kinetics 476
Effect of the impingement on the kinetics of island aggregation in the post-nucleation stage of film growth at solid surfaces 471
Beneficial defects: Exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires 471
Scaling law and dynamical exponent in the Volmer-Weber growth mode: silver on GaAs(001)2 x 4 470
Shaping Ge islands on Si(001) surfaces with misorientation angle 469
Step erosion during nucleation of InAsGaAs (001) quantum dots 467
A synchrotron radiation photoemission study of the oxidation of tin 467
Structural study of the InAs quantum-dot nucleation on GaAs(001) 464
Modeling adatom life time in thin film growth in case of spatially correlated nuclei 463
Film growth viewed as stochastic dot processes 462
Stochastic transformation of points in polygons according to the Voronoi tessellation: Microstructural description 460
Anisotropy of the GaAs(001)-beta 2(2x4) surface from high-resolution electron energy loss spectroscopy 458
How the nonrandom distribution of nuclei affects the island density in thin-film growth 456
A study of the pair distribution function of self-organized Ge quantum dots 455
Kinetics of island density in thin film growth in the framework of statistical mechanics of rigid disks 452
Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy 452
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 451
Mean field approach for describing thin film morphology 451
Adsorption of molecular oxygen on GaAs(001) studied using high-resolution electron energy-loss spectroscopy 451
Coarsening effect on island-size scaling: The model case InAs/GaAs(001) 451
Breaking elastic field symmetry in the Ge/Si(001) growth with substrate vicinality 449
Dirac delta nucleation in the framework of Avrami's model: The case of diamond growth on deformed Si(100) 446
Dynamic behavior of silver islands growing on GaAs(001)2X4 substrate 445
Self-assembly of Ge quantum dots on Silicon:An example of controlled nanomanufacturing 442
Atomic Force microscopy analyses of InAs/GaAs heterostructures grown by MBE 441
Turbulent convective flows in the solar photospheric plasma 439
The GaAS(001)-c(4x4) surface: a new perspective from energy loss spectra 436
Analytical versus numerical approaches to the kinetics of cluster impingement in thin-film nucleation at solid surfaces 436
Selective growth of InAs quantum dots on SiO2-masked GaAs 436
Comparative study of Ag growth on GaAs(001) and (110) surfaces 433
Morphology of self-assembled InAs quantum dots on GaAs(001) 433
Heteroepitaxy of Ge on singular and vicinal Si surfaces: Elastic field symmetry and nanostructure growth 433
InAs/GaAs(001) epitaxy: Kinetic effects in the two-dimensional to three-dimensional transition 432
Electron energy loss study of Ag- and Au-GaAs(110) interfaces 431
The influence of steps on the island distribution function in thin solid film formation 429
How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs/GaAs(001) 428
Order and randomness in Kolmogorov–Johnson–Mehl–Avrami-type phase transitions 428
The influence of the wetting layer morphology on the nucleation and the evolution of InAs/GaAs (001) Quantum Dots 427
Kinetics study of the GaP(110)/Cu interface via P L2,3VV Auger line shape and x-ray-photoemission spectroscopies 427
Role of patterning in islands nucleation on semiconductor surfaces 425
Modelling of the reactive interface formation on Bi2Sr2CaCu2O8 425
Beyond the constraints underlying Kolmogorov-Johnson-Mehl-Avrami theory related to the growth laws 425
Interplay between Kolmogorov-Johnson-Mehl-Avrami kinetics and Poisson-Voronoi tessellation 425
Morphological instabilities of the InAs/GaAs(001) interface and their effect on the self-assembling of InAs quantum-dot arrays 423
Morphology of the Fe, Cr and Ge/Bi2Sr2CaCu2O8 reactive interfaces from XPS and STM analyses 422
Irreversible order-disorder transformation of Ge(0 0 1) probed by scanning tunnelling microscopy 422
Ge growth on vicinal Si(001)surfaces: islands’ shape and pair interaction vs miscut angle 421
Bethe-lattice approach for electronegativity calculation in amorphous alloys and its correlation with the chemical shift: alpha-SiOx and alpha-SiNx cases 420
Mean field approach for describing thin film morphology: 2. Adatom life time 420
I fenomeni fisici e chimici irreversibili: La diffusione 419
Observation of interface states by high-resolution electron-energy-loss spectroscopy in metal-GaAs(110) junctions 418
Self-assembly of InAs and Si/Ge quantum dots on structured surfaces 417
Ordering of Ge islands on Si(001) substrates patterned by nanoindentation 415
GaAs detectors for underground physics 414
The entangled role of strain and diffusion in driving the spontaneous formation of atolls and holes in Ge/Si(111) heteroepitaxy 414
In situ X-ray absorption measurements of the Cu/MgO(0 0 1) interface 413
Effects of substrate vicinality on 3D islanding in Ge/Si epitaxy 413
Study of the defects induced by low-energy (100 eV) hydrogen-ions on amorphous silicon dioxide 412
Towards a Controlled Growth of Self-assembled Nanostructures: Shaping, Ordering, and Localization in Ge/Si Heteroepitaxy 411
Extended fine-structure in secondary backscattered electrons 410
Microscopic aspects of the Fe/Bi2Sr2CaCu2O8 reactive interface 407
The InAs/GaAs(001) Quantum Dots Transition: Advances on Understanding 407
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 407
Ripple-to-dome transition: The growth of Ge on Si(1 1 10) vicinal surface 406
Comparative study of low temperature growth of InAs and InMnAs quantum dots 404
Orientational phase diagram of the epitaxially strained Si(001): evidence of a singular (105) face 402
Roughness in the Kolmogorov-Johnson-Mehl-Avrami framework: extension to (2+1)D of the Trofimov-Park model 401
The monitoring of 2d-3d transition for InAs/GaAs (001) self-assembled quantum dots by atomic force microscopy 401
Surface versus bulk contributions from reflectance anisotropy and electron energy loss spectra of the GaAs(001)-c(4x4) surface 400
Comparison between extended x-ray-absorption and extended electron energy-loss fine-structure results above the M2,3 edge of cobalt 400
Hugh-like island growth of Ge on strained vicinal Si(111) surfaces 400
Beyond the Kolmogorov Johnson Mehl Avrami kinetics: inclusion of the spatial correlation 399
On the size distribution function of diamoind nano-crystals grown on surfaces 399
Single quantum dot emission by nanoscale selective growth of InAs on GaAs: A bottom-up approach 398
Temperature-dependent Cu interface growth on GaP(110) via Auger lineshape and X-ray photoemission spectroscopies 398
Towards the ordering of Ge nanoislands on Si(001) surface with misorientation angle 398
Kinetic aspects of the morphology of self-assembled InAs quantum dots on GaAs(001) 396
Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth 396
Corroles at the Real Solid–Liquid Interface: In Situ STM Investigation of a Water-Soluble Corrole Layer Deposited onto Au(111) 396
Scaling, Voronoi Tessellation and KJMA: the distribution function in thin solid films 395
Evidence of siox suboxides at ar ion etched-silica surfaces 393
I fenomeni fisici e chimici irreversibili: la teoria termodinamica dell'osmosi e la sua verifica sperimentale 393
Temperature dependence of the size distribution function of InAs quantum dots on GaAs(001) 388
Evidence of SI-OH soecies at the surface of aged silica 385
Studies on the structure of the SiOx/SiO2 interface 385
Totale 45.247
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Categoria #
all - tutte 115.144
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 115.144
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021437 0 0 0 0 0 0 0 0 0 0 305 132
2021/20221.574 69 193 136 71 54 125 83 74 139 122 74 434
2022/20232.007 188 130 27 322 199 436 153 115 197 15 170 55
2023/2024898 102 36 53 29 65 205 65 57 29 61 47 149
2024/20253.917 156 713 392 224 111 212 350 325 330 260 514 330
2025/20264.590 360 307 563 443 424 242 548 645 587 434 37 0
Totale 56.585