IRIS
FANFONI, MASSIMO
 Distribuzione geografica
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Continente #
NA - Nord America 44.819
EU - Europa 4.914
AS - Asia 3.566
SA - Sud America 580
AF - Africa 44
Continente sconosciuto - Info sul continente non disponibili 18
OC - Oceania 11
Totale 53.952
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Nazione #
US - Stati Uniti d'America 44.691
SG - Singapore 2.015
IT - Italia 1.791
CN - Cina 695
UA - Ucraina 640
DE - Germania 608
BR - Brasile 457
IE - Irlanda 382
HK - Hong Kong 371
SE - Svezia 334
RU - Federazione Russa 266
GB - Regno Unito 261
FR - Francia 217
FI - Finlandia 155
KR - Corea 122
NL - Olanda 99
VN - Vietnam 94
CA - Canada 58
MX - Messico 56
JP - Giappone 50
IN - India 45
BE - Belgio 32
CO - Colombia 30
EC - Ecuador 30
PL - Polonia 28
AR - Argentina 27
UZ - Uzbekistan 24
ES - Italia 22
TR - Turchia 21
ID - Indonesia 19
EU - Europa 17
IL - Israele 15
ZA - Sudafrica 15
BD - Bangladesh 14
RO - Romania 14
PE - Perù 13
CZ - Repubblica Ceca 12
IQ - Iraq 12
LT - Lituania 11
PK - Pakistan 10
AT - Austria 9
AU - Australia 9
GR - Grecia 8
TW - Taiwan 8
MA - Marocco 7
EG - Egitto 6
IR - Iran 6
KZ - Kazakistan 6
PH - Filippine 6
PY - Paraguay 6
CL - Cile 5
JO - Giordania 5
MY - Malesia 5
UY - Uruguay 5
VE - Venezuela 5
CH - Svizzera 4
HU - Ungheria 4
KE - Kenya 4
PT - Portogallo 4
SA - Arabia Saudita 4
TH - Thailandia 4
BG - Bulgaria 3
DZ - Algeria 3
JM - Giamaica 3
LB - Libano 3
MD - Moldavia 3
AE - Emirati Arabi Uniti 2
BO - Bolivia 2
CI - Costa d'Avorio 2
CR - Costa Rica 2
DK - Danimarca 2
DO - Repubblica Dominicana 2
ET - Etiopia 2
GE - Georgia 2
HN - Honduras 2
KW - Kuwait 2
NZ - Nuova Zelanda 2
SC - Seychelles 2
TN - Tunisia 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AM - Armenia 1
AZ - Azerbaigian 1
BS - Bahamas 1
BY - Bielorussia 1
DM - Dominica 1
EE - Estonia 1
KG - Kirghizistan 1
LK - Sri Lanka 1
LU - Lussemburgo 1
LV - Lettonia 1
NI - Nicaragua 1
NO - Norvegia 1
NP - Nepal 1
OM - Oman 1
PR - Porto Rico 1
SN - Senegal 1
SV - El Salvador 1
Totale 53.952
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Città #
Woodbridge 13.159
Wilmington 11.633
Houston 10.945
Fairfield 1.254
Ann Arbor 1.185
Singapore 805
Ashburn 720
Chandler 650
Jacksonville 562
Seattle 523
Cambridge 412
Dublin 377
Hong Kong 358
Beijing 344
Rome 291
Medford 286
Dearborn 224
New York 204
Santa Clara 192
Milan 153
Council Bluffs 143
Lawrence 136
Los Angeles 113
The Dalles 99
Mülheim 96
Buffalo 80
Menlo Park 71
San Diego 65
Boardman 58
Moscow 57
São Paulo 56
San Mateo 55
Redwood City 48
Naples 45
Munich 43
Dallas 40
Florence 34
Brussels 31
Mountain View 31
Ho Chi Minh City 30
Nanjing 27
Verona 27
University Park 26
Hefei 25
Zhengzhou 25
Norwalk 24
Guangzhou 23
London 23
Montreal 23
Hanoi 22
Toronto 22
Bologna 19
Kunming 19
Tokyo 19
Turin 19
Falls Church 18
Chicago 17
Phoenix 17
Bari 16
Orem 16
Redondo Beach 16
Helsinki 15
Nürnberg 15
Warsaw 15
Chennai 14
Palo Alto 14
Stockholm 14
Turku 14
Indiana 13
Mexico City 13
Nuremberg 13
Frankfurt am Main 12
Padova 12
Saint Petersburg 12
San Jose 12
Tappahannock 12
Auburn Hills 11
Genoa 11
Lappeenranta 11
San Francisco 11
Shanghai 11
Atlanta 10
Belo Horizonte 10
Kraków 10
Quito 10
Brescia 9
Brno 9
Jakarta 9
Johannesburg 9
Palermo 9
Poplar 9
Treviso 9
Bogotá 8
Brooklyn 8
Curitiba 8
Rio de Janeiro 8
Torino 8
Amsterdam 7
Ankara 7
Boston 7
Totale 46.470
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Nome #
Perché il logaritmo della somma non è uguale alla somma dei logaritmi: gli operatori lineari 1.346
Il principio di Huygens Fresnel e la diffrazione 722
Size-dependent reversal of the elastic interaction energy between misfit nanostructures 600
Atomi,Molecole e Solidi: Esercizi risolti 587
The Unexpected Role of Arsenic in Driving the Selective Growth of InAs Quantum Dots on GaAs 586
Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001) 517
ArF excimer laser deposited tin oxide films studied by "in situ" surface diagnostics and by synchrotron radiation induced UV photoemission 488
Electronic anisotropy of the GaAs(001) surface studied by energy loss spectroscopy 482
2D Voronoi tessellation generated by lines and belts of dots 479
Demonstration of Avrami's kinetics: Connection with rate equations for clustering on surfaces 475
XPS and STM study of Mn incorporation on the GaAs(001) surface 473
A Highly Emissive Water-Soluble Phosphorus Corrole 472
Impingement factor in the case of phase transformations governed by spatially correlated nucleation 468
Avrami's kinetic approach for describing Volmer Weber growth mode at solid surfaces studied via PES and AES 463
Idrogeno ed elio : atomi di storia 462
Comparative study of approaches based on the differential critical region and correlation functions in modeling phase-transformation kinetics 459
Scaling law and dynamical exponent in the Volmer-Weber growth mode: silver on GaAs(001)2 x 4 457
Step erosion during nucleation of InAsGaAs (001) quantum dots 455
Effect of the impingement on the kinetics of island aggregation in the post-nucleation stage of film growth at solid surfaces 454
Stochastic transformation of points in polygons according to the Voronoi tessellation: Microstructural description 453
Beneficial defects: Exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires 452
Film growth viewed as stochastic dot processes 450
Shaping Ge islands on Si(001) surfaces with misorientation angle 450
Structural study of the InAs quantum-dot nucleation on GaAs(001) 447
Modeling adatom life time in thin film growth in case of spatially correlated nuclei 445
A synchrotron radiation photoemission study of the oxidation of tin 444
Anisotropy of the GaAs(001)-beta 2(2x4) surface from high-resolution electron energy loss spectroscopy 441
A study of the pair distribution function of self-organized Ge quantum dots 441
Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy 441
Mean field approach for describing thin film morphology 440
How the nonrandom distribution of nuclei affects the island density in thin-film growth 440
Kinetics of island density in thin film growth in the framework of statistical mechanics of rigid disks 438
Dynamic behavior of silver islands growing on GaAs(001)2X4 substrate 435
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 434
Adsorption of molecular oxygen on GaAs(001) studied using high-resolution electron energy-loss spectroscopy 434
Dirac delta nucleation in the framework of Avrami's model: The case of diamond growth on deformed Si(100) 431
Coarsening effect on island-size scaling: The model case InAs/GaAs(001) 431
Breaking elastic field symmetry in the Ge/Si(001) growth with substrate vicinality 429
Self-assembly of Ge quantum dots on Silicon:An example of controlled nanomanufacturing 428
Atomic Force microscopy analyses of InAs/GaAs heterostructures grown by MBE 424
Morphology of self-assembled InAs quantum dots on GaAs(001) 423
Turbulent convective flows in the solar photospheric plasma 423
The GaAS(001)-c(4x4) surface: a new perspective from energy loss spectra 422
Selective growth of InAs quantum dots on SiO2-masked GaAs 422
Electron energy loss study of Ag- and Au-GaAs(110) interfaces 421
Analytical versus numerical approaches to the kinetics of cluster impingement in thin-film nucleation at solid surfaces 421
Heteroepitaxy of Ge on singular and vicinal Si surfaces: Elastic field symmetry and nanostructure growth 420
The influence of steps on the island distribution function in thin solid film formation 418
Order and randomness in Kolmogorov–Johnson–Mehl–Avrami-type phase transitions 418
Comparative study of Ag growth on GaAs(001) and (110) surfaces 416
Modelling of the reactive interface formation on Bi2Sr2CaCu2O8 416
Kinetics study of the GaP(110)/Cu interface via P L2,3VV Auger line shape and x-ray-photoemission spectroscopies 416
InAs/GaAs(001) epitaxy: Kinetic effects in the two-dimensional to three-dimensional transition 415
Role of patterning in islands nucleation on semiconductor surfaces 414
The influence of the wetting layer morphology on the nucleation and the evolution of InAs/GaAs (001) Quantum Dots 414
Morphological instabilities of the InAs/GaAs(001) interface and their effect on the self-assembling of InAs quantum-dot arrays 413
Morphology of the Fe, Cr and Ge/Bi2Sr2CaCu2O8 reactive interfaces from XPS and STM analyses 412
How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs/GaAs(001) 411
Beyond the constraints underlying Kolmogorov-Johnson-Mehl-Avrami theory related to the growth laws 410
Irreversible order-disorder transformation of Ge(0 0 1) probed by scanning tunnelling microscopy 410
Observation of interface states by high-resolution electron-energy-loss spectroscopy in metal-GaAs(110) junctions 409
Mean field approach for describing thin film morphology: 2. Adatom life time 409
Bethe-lattice approach for electronegativity calculation in amorphous alloys and its correlation with the chemical shift: alpha-SiOx and alpha-SiNx cases 406
I fenomeni fisici e chimici irreversibili: La diffusione 406
Ge growth on vicinal Si(001)surfaces: islands’ shape and pair interaction vs miscut angle 404
Ordering of Ge islands on Si(001) substrates patterned by nanoindentation 403
Study of the defects induced by low-energy (100 eV) hydrogen-ions on amorphous silicon dioxide 402
Towards a Controlled Growth of Self-assembled Nanostructures: Shaping, Ordering, and Localization in Ge/Si Heteroepitaxy 402
The entangled role of strain and diffusion in driving the spontaneous formation of atolls and holes in Ge/Si(111) heteroepitaxy 402
Effects of substrate vicinality on 3D islanding in Ge/Si epitaxy 402
In situ X-ray absorption measurements of the Cu/MgO(0 0 1) interface 401
GaAs detectors for underground physics 401
Interplay between Kolmogorov-Johnson-Mehl-Avrami kinetics and Poisson-Voronoi tessellation 401
Self-assembly of InAs and Si/Ge quantum dots on structured surfaces 400
Microscopic aspects of the Fe/Bi2Sr2CaCu2O8 reactive interface 400
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 398
The InAs/GaAs(001) Quantum Dots Transition: Advances on Understanding 396
Extended fine-structure in secondary backscattered electrons 395
Ripple-to-dome transition: The growth of Ge on Si(1 1 10) vicinal surface 393
Orientational phase diagram of the epitaxially strained Si(001): evidence of a singular (105) face 393
On the size distribution function of diamoind nano-crystals grown on surfaces 392
Comparison between extended x-ray-absorption and extended electron energy-loss fine-structure results above the M2,3 edge of cobalt 391
Single quantum dot emission by nanoscale selective growth of InAs on GaAs: A bottom-up approach 390
Comparative study of low temperature growth of InAs and InMnAs quantum dots 390
Surface versus bulk contributions from reflectance anisotropy and electron energy loss spectra of the GaAs(001)-c(4x4) surface 389
Roughness in the Kolmogorov-Johnson-Mehl-Avrami framework: extension to (2+1)D of the Trofimov-Park model 389
Kinetic aspects of the morphology of self-assembled InAs quantum dots on GaAs(001) 388
Evidence of siox suboxides at ar ion etched-silica surfaces 387
Temperature-dependent Cu interface growth on GaP(110) via Auger lineshape and X-ray photoemission spectroscopies 386
Towards the ordering of Ge nanoislands on Si(001) surface with misorientation angle 386
Hugh-like island growth of Ge on strained vicinal Si(111) surfaces 386
The monitoring of 2d-3d transition for InAs/GaAs (001) self-assembled quantum dots by atomic force microscopy 384
Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth 383
Scaling, Voronoi Tessellation and KJMA: the distribution function in thin solid films 382
Temperature dependence of the size distribution function of InAs quantum dots on GaAs(001) 381
Beyond the Kolmogorov Johnson Mehl Avrami kinetics: inclusion of the spatial correlation 380
Studies on the structure of the SiOx/SiO2 interface 376
Corroles at the Real Solid–Liquid Interface: In Situ STM Investigation of a Water-Soluble Corrole Layer Deposited onto Au(111) 376
Step-step interaction on vicinal Si(001) surfaces studied by scanning tunneling microscopy 374
Kinetics of cluster impingement in thin film nucleation at solid surfaces: estimation of the collision series up to the four order term 371
Totale 43.712
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Categoria #
all - tutte 110.151
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 110.151
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20213.278 0 0 0 0 0 874 920 641 259 147 305 132
2021/20221.574 69 193 136 71 54 125 83 74 139 122 74 434
2022/20232.007 188 130 27 322 199 436 153 115 197 15 170 55
2023/2024898 102 36 53 29 65 205 65 57 29 61 47 149
2024/20253.917 156 713 392 224 111 212 350 325 330 260 514 330
2025/20262.339 360 307 563 443 424 242 0 0 0 0 0 0
Totale 54.334