IRIS
FANFONI, MASSIMO
 Distribuzione geografica
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Continente #
NA - Nord America 46.241
EU - Europa 5.605
AS - Asia 4.580
SA - Sud America 640
Continente sconosciuto - Info sul continente non disponibili 409
AF - Africa 59
OC - Oceania 14
Totale 57.548
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Nazione #
US - Stati Uniti d'America 46.045
SG - Singapore 2.323
IT - Italia 2.050
CN - Cina 857
UA - Ucraina 641
DE - Germania 628
RU - Federazione Russa 532
BR - Brasile 483
HK - Hong Kong 397
IE - Irlanda 384
SE - Svezia 338
VN - Vietnam 332
FR - Francia 277
GB - Regno Unito 273
FI - Finlandia 174
JP - Giappone 143
KR - Corea 127
BD - Bangladesh 121
NL - Olanda 120
CA - Canada 95
MX - Messico 64
IN - India 53
AR - Argentina 38
CO - Colombia 36
BE - Belgio 33
EC - Ecuador 33
PL - Polonia 31
UZ - Uzbekistan 28
IQ - Iraq 27
ES - Italia 26
ID - Indonesia 25
TR - Turchia 24
EU - Europa 17
IL - Israele 16
ZA - Sudafrica 16
PH - Filippine 15
RO - Romania 15
LT - Lituania 14
PE - Perù 13
PK - Pakistan 13
AU - Australia 12
CZ - Repubblica Ceca 12
MY - Malesia 12
VE - Venezuela 12
AT - Austria 10
CL - Cile 10
GR - Grecia 10
MA - Marocco 10
TH - Thailandia 8
TW - Taiwan 8
SA - Arabia Saudita 7
TN - Tunisia 7
EG - Egitto 6
HU - Ungheria 6
IR - Iran 6
JM - Giamaica 6
JO - Giordania 6
KZ - Kazakistan 6
NP - Nepal 6
PT - Portogallo 6
PY - Paraguay 6
UY - Uruguay 6
AE - Emirati Arabi Uniti 5
CR - Costa Rica 5
DK - Danimarca 5
DO - Repubblica Dominicana 5
KE - Kenya 5
MD - Moldavia 5
SV - El Salvador 5
CH - Svizzera 4
ET - Etiopia 4
BG - Bulgaria 3
BO - Bolivia 3
CI - Costa d'Avorio 3
DZ - Algeria 3
HN - Honduras 3
LB - Libano 3
NI - Nicaragua 3
OM - Oman 3
PR - Porto Rico 3
TT - Trinidad e Tobago 3
AZ - Azerbaigian 2
GE - Georgia 2
KW - Kuwait 2
NZ - Nuova Zelanda 2
SC - Seychelles 2
SI - Slovenia 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AL - Albania 1
AM - Armenia 1
BB - Barbados 1
BS - Bahamas 1
BY - Bielorussia 1
DM - Dominica 1
EE - Estonia 1
KG - Kirghizistan 1
LK - Sri Lanka 1
LU - Lussemburgo 1
LV - Lettonia 1
MU - Mauritius 1
Totale 57.153
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Città #
Woodbridge 13.159
Wilmington 11.633
Houston 10.949
Fairfield 1.254
Ann Arbor 1.185
Singapore 1.073
Ashburn 851
Chandler 650
Jacksonville 562
San Jose 531
Seattle 524
Cambridge 412
Dublin 379
Hong Kong 379
Beijing 366
Rome 313
Council Bluffs 292
Medford 286
New York 243
Dearborn 224
Santa Clara 216
Milan 170
The Dalles 145
Lawrence 136
Los Angeles 126
Tokyo 108
Ho Chi Minh City 96
Mülheim 96
Buffalo 88
Moscow 87
Hanoi 82
Menlo Park 71
San Diego 66
São Paulo 60
Boardman 58
Naples 56
San Mateo 55
Redwood City 48
Dallas 44
Munich 43
Lauterbourg 42
Florence 39
Helsinki 33
Brussels 31
Mountain View 31
Chicago 28
Nanjing 27
Verona 27
London 26
Toronto 26
University Park 26
Zhengzhou 26
Hefei 25
Montreal 25
Norwalk 24
Bologna 23
Guangzhou 23
Turin 22
Frankfurt am Main 20
Atlanta 19
Bari 19
Kunming 19
Phoenix 19
Falls Church 18
Orem 18
Redondo Beach 16
Chennai 15
Haiphong 15
Nürnberg 15
Stockholm 15
Warsaw 15
Nuremberg 14
Palo Alto 14
Turku 14
Genoa 13
Indiana 13
Mexico City 13
Palermo 13
Washington 13
Da Nang 12
Padova 12
Quito 12
Saint Petersburg 12
San Francisco 12
Shanghai 12
Tappahannock 12
Auburn Hills 11
Brescia 11
Brooklyn 11
Lappeenranta 11
Baghdad 10
Belo Horizonte 10
Catania 10
Jakarta 10
Kraków 10
Rio de Janeiro 10
Treviso 10
Brno 9
Columbus 9
Johannesburg 9
Totale 48.175
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Nome #
Perché il logaritmo della somma non è uguale alla somma dei logaritmi: gli operatori lineari 1.556
Il principio di Huygens Fresnel e la diffrazione 784
Size-dependent reversal of the elastic interaction energy between misfit nanostructures 619
Atomi,Molecole e Solidi: Esercizi risolti 609
The Unexpected Role of Arsenic in Driving the Selective Growth of InAs Quantum Dots on GaAs 606
Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001) 550
2D Voronoi tessellation generated by lines and belts of dots 516
ArF excimer laser deposited tin oxide films studied by "in situ" surface diagnostics and by synchrotron radiation induced UV photoemission 512
Idrogeno ed elio : atomi di storia 502
Electronic anisotropy of the GaAs(001) surface studied by energy loss spectroscopy 492
Impingement factor in the case of phase transformations governed by spatially correlated nucleation 492
A Highly Emissive Water-Soluble Phosphorus Corrole 492
Demonstration of Avrami's kinetics: Connection with rate equations for clustering on surfaces 491
XPS and STM study of Mn incorporation on the GaAs(001) surface 488
A synchrotron radiation photoemission study of the oxidation of tin 482
Comparative study of approaches based on the differential critical region and correlation functions in modeling phase-transformation kinetics 481
Avrami's kinetic approach for describing Volmer Weber growth mode at solid surfaces studied via PES and AES 480
Effect of the impingement on the kinetics of island aggregation in the post-nucleation stage of film growth at solid surfaces 476
Shaping Ge islands on Si(001) surfaces with misorientation angle 476
Scaling law and dynamical exponent in the Volmer-Weber growth mode: silver on GaAs(001)2 x 4 475
Beneficial defects: Exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires 474
Structural study of the InAs quantum-dot nucleation on GaAs(001) 472
Step erosion during nucleation of InAsGaAs (001) quantum dots 471
Modeling adatom life time in thin film growth in case of spatially correlated nuclei 465
Film growth viewed as stochastic dot processes 464
Stochastic transformation of points in polygons according to the Voronoi tessellation: Microstructural description 462
Anisotropy of the GaAs(001)-beta 2(2x4) surface from high-resolution electron energy loss spectroscopy 461
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 459
How the nonrandom distribution of nuclei affects the island density in thin-film growth 459
Coarsening effect on island-size scaling: The model case InAs/GaAs(001) 458
Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy 457
A study of the pair distribution function of self-organized Ge quantum dots 456
Breaking elastic field symmetry in the Ge/Si(001) growth with substrate vicinality 455
Dirac delta nucleation in the framework of Avrami's model: The case of diamond growth on deformed Si(100) 454
Mean field approach for describing thin film morphology 454
Adsorption of molecular oxygen on GaAs(001) studied using high-resolution electron energy-loss spectroscopy 454
Self-assembly of Ge quantum dots on Silicon:An example of controlled nanomanufacturing 453
Kinetics of island density in thin film growth in the framework of statistical mechanics of rigid disks 452
Dynamic behavior of silver islands growing on GaAs(001)2X4 substrate 449
Atomic Force microscopy analyses of InAs/GaAs heterostructures grown by MBE 445
The GaAS(001)-c(4x4) surface: a new perspective from energy loss spectra 444
Turbulent convective flows in the solar photospheric plasma 444
Selective growth of InAs quantum dots on SiO2-masked GaAs 443
Comparative study of Ag growth on GaAs(001) and (110) surfaces 441
InAs/GaAs(001) epitaxy: Kinetic effects in the two-dimensional to three-dimensional transition 441
Analytical versus numerical approaches to the kinetics of cluster impingement in thin-film nucleation at solid surfaces 440
Heteroepitaxy of Ge on singular and vicinal Si surfaces: Elastic field symmetry and nanostructure growth 438
Morphology of self-assembled InAs quantum dots on GaAs(001) 435
The influence of steps on the island distribution function in thin solid film formation 434
How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs/GaAs(001) 434
I fenomeni fisici e chimici irreversibili: La diffusione 434
Order and randomness in Kolmogorov–Johnson–Mehl–Avrami-type phase transitions 434
Electron energy loss study of Ag- and Au-GaAs(110) interfaces 433
The influence of the wetting layer morphology on the nucleation and the evolution of InAs/GaAs (001) Quantum Dots 430
Interplay between Kolmogorov-Johnson-Mehl-Avrami kinetics and Poisson-Voronoi tessellation 430
Role of patterning in islands nucleation on semiconductor surfaces 429
Morphological instabilities of the InAs/GaAs(001) interface and their effect on the self-assembling of InAs quantum-dot arrays 429
Modelling of the reactive interface formation on Bi2Sr2CaCu2O8 429
Kinetics study of the GaP(110)/Cu interface via P L2,3VV Auger line shape and x-ray-photoemission spectroscopies 429
Ge growth on vicinal Si(001)surfaces: islands’ shape and pair interaction vs miscut angle 429
Beyond the constraints underlying Kolmogorov-Johnson-Mehl-Avrami theory related to the growth laws 429
Morphology of the Fe, Cr and Ge/Bi2Sr2CaCu2O8 reactive interfaces from XPS and STM analyses 426
Bethe-lattice approach for electronegativity calculation in amorphous alloys and its correlation with the chemical shift: alpha-SiOx and alpha-SiNx cases 424
Irreversible order-disorder transformation of Ge(0 0 1) probed by scanning tunnelling microscopy 424
Observation of interface states by high-resolution electron-energy-loss spectroscopy in metal-GaAs(110) junctions 422
Ordering of Ge islands on Si(001) substrates patterned by nanoindentation 422
Mean field approach for describing thin film morphology: 2. Adatom life time 422
Self-assembly of InAs and Si/Ge quantum dots on structured surfaces 420
Towards a Controlled Growth of Self-assembled Nanostructures: Shaping, Ordering, and Localization in Ge/Si Heteroepitaxy 419
The entangled role of strain and diffusion in driving the spontaneous formation of atolls and holes in Ge/Si(111) heteroepitaxy 418
GaAs detectors for underground physics 416
Effects of substrate vicinality on 3D islanding in Ge/Si epitaxy 416
Study of the defects induced by low-energy (100 eV) hydrogen-ions on amorphous silicon dioxide 415
In situ X-ray absorption measurements of the Cu/MgO(0 0 1) interface 415
Ripple-to-dome transition: The growth of Ge on Si(1 1 10) vicinal surface 414
Extended fine-structure in secondary backscattered electrons 412
Surface versus bulk contributions from reflectance anisotropy and electron energy loss spectra of the GaAs(001)-c(4x4) surface 411
Microscopic aspects of the Fe/Bi2Sr2CaCu2O8 reactive interface 411
Comparative study of low temperature growth of InAs and InMnAs quantum dots 410
The InAs/GaAs(001) Quantum Dots Transition: Advances on Understanding 410
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 410
Hugh-like island growth of Ge on strained vicinal Si(111) surfaces 408
The monitoring of 2d-3d transition for InAs/GaAs (001) self-assembled quantum dots by atomic force microscopy 407
Orientational phase diagram of the epitaxially strained Si(001): evidence of a singular (105) face 407
I fenomeni fisici e chimici irreversibili: la teoria termodinamica dell'osmosi e la sua verifica sperimentale 407
Beyond the Kolmogorov Johnson Mehl Avrami kinetics: inclusion of the spatial correlation 406
Kinetics of cluster impingement in thin film nucleation at solid surfaces: estimation of the collision series up to the four order term 406
Comparison between extended x-ray-absorption and extended electron energy-loss fine-structure results above the M2,3 edge of cobalt 404
On the size distribution function of diamoind nano-crystals grown on surfaces 404
Roughness in the Kolmogorov-Johnson-Mehl-Avrami framework: extension to (2+1)D of the Trofimov-Park model 403
Towards the ordering of Ge nanoislands on Si(001) surface with misorientation angle 403
Corroles at the Real Solid–Liquid Interface: In Situ STM Investigation of a Water-Soluble Corrole Layer Deposited onto Au(111) 403
Single quantum dot emission by nanoscale selective growth of InAs on GaAs: A bottom-up approach 401
Temperature-dependent Cu interface growth on GaP(110) via Auger lineshape and X-ray photoemission spectroscopies 401
Kinetic aspects of the morphology of self-assembled InAs quantum dots on GaAs(001) 400
Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth 399
Scaling, Voronoi Tessellation and KJMA: the distribution function in thin solid films 399
Evidence of siox suboxides at ar ion etched-silica surfaces 394
Temperature dependence of the size distribution function of InAs quantum dots on GaAs(001) 394
Evidence of SI-OH soecies at the surface of aged silica 392
Totale 45.857
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Categoria #
all - tutte 122.024
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 122.024
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.505 0 193 136 71 54 125 83 74 139 122 74 434
2022/20232.007 188 130 27 322 199 436 153 115 197 15 170 55
2023/2024898 102 36 53 29 65 205 65 57 29 61 47 149
2024/20253.917 156 713 392 224 111 212 350 325 330 260 514 330
2025/20265.063 360 307 563 443 424 242 548 645 587 434 268 242
2026/2027490 240 250 0 0 0 0 0 0 0 0 0 0
Totale 57.548