IRIS
FANFONI, MASSIMO
 Distribuzione geografica
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Continente #
NA - Nord America 47.483
EU - Europa 5.694
AS - Asia 4.611
SA - Sud America 673
Continente sconosciuto - Info sul continente non disponibili 409
AF - Africa 63
OC - Oceania 14
Totale 58.947
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Nazione #
US - Stati Uniti d'America 47.239
SG - Singapore 2.323
IT - Italia 2.103
CN - Cina 857
UA - Ucraina 641
DE - Germania 628
RU - Federazione Russa 534
BR - Brasile 500
HK - Hong Kong 397
IE - Irlanda 388
SE - Svezia 340
VN - Vietnam 335
GB - Regno Unito 290
FR - Francia 285
FI - Finlandia 174
JP - Giappone 146
KR - Corea 127
BD - Bangladesh 122
NL - Olanda 121
CA - Canada 115
MX - Messico 67
IN - India 55
CO - Colombia 43
AR - Argentina 41
EC - Ecuador 37
BE - Belgio 33
PL - Polonia 31
UZ - Uzbekistan 28
ES - Italia 27
ID - Indonesia 27
IQ - Iraq 27
TR - Turchia 26
IL - Israele 19
PH - Filippine 19
EU - Europa 17
ZA - Sudafrica 17
RO - Romania 15
LT - Lituania 14
MY - Malesia 14
PK - Pakistan 14
VE - Venezuela 14
PE - Perù 13
AU - Australia 12
CZ - Repubblica Ceca 12
CR - Costa Rica 11
JM - Giamaica 11
TH - Thailandia 11
AT - Austria 10
CL - Cile 10
GR - Grecia 10
MA - Marocco 10
SA - Arabia Saudita 8
TW - Taiwan 8
NI - Nicaragua 7
TN - Tunisia 7
DK - Danimarca 6
EG - Egitto 6
HN - Honduras 6
HU - Ungheria 6
IR - Iran 6
JO - Giordania 6
KE - Kenya 6
KZ - Kazakistan 6
NP - Nepal 6
PT - Portogallo 6
PY - Paraguay 6
UY - Uruguay 6
AE - Emirati Arabi Uniti 5
DO - Repubblica Dominicana 5
MD - Moldavia 5
SV - El Salvador 5
CH - Svizzera 4
ET - Etiopia 4
GT - Guatemala 4
OM - Oman 4
TT - Trinidad e Tobago 4
BG - Bulgaria 3
BO - Bolivia 3
CI - Costa d'Avorio 3
DZ - Algeria 3
KW - Kuwait 3
LB - Libano 3
PR - Porto Rico 3
SC - Seychelles 3
AZ - Azerbaigian 2
BB - Barbados 2
BS - Bahamas 2
GE - Georgia 2
NZ - Nuova Zelanda 2
SI - Slovenia 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AL - Albania 1
AM - Armenia 1
BN - Brunei Darussalam 1
BY - Bielorussia 1
DM - Dominica 1
EE - Estonia 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
Totale 58.548
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Città #
Woodbridge 13.159
Wilmington 11.634
Houston 10.951
Fairfield 1.254
Ann Arbor 1.185
Ashburn 1.151
Singapore 1.073
Chandler 650
San Jose 607
Jacksonville 562
Seattle 526
Cambridge 413
Dublin 379
Hong Kong 379
Beijing 366
Rome 320
Council Bluffs 292
Medford 286
New York 253
Dearborn 224
Santa Clara 222
Milan 171
The Dalles 145
Los Angeles 137
Lawrence 136
Tokyo 110
Ho Chi Minh City 98
Mülheim 96
Buffalo 91
Moscow 87
Hanoi 82
Menlo Park 71
San Diego 68
São Paulo 66
Boardman 58
Naples 57
San Mateo 55
Redwood City 48
Dallas 46
Munich 43
Lauterbourg 42
Florence 40
Denver 37
Helsinki 33
Toronto 32
Brussels 31
Chicago 31
Mountain View 31
Phoenix 30
London 28
Montreal 28
Nanjing 27
Verona 27
University Park 26
Zhengzhou 26
Atlanta 25
Hefei 25
Norwalk 24
Bologna 23
Guangzhou 23
Turin 23
Frankfurt am Main 20
Bari 19
Kunming 19
Orem 19
Falls Church 18
Washington 17
Redondo Beach 16
Chennai 15
Haiphong 15
Nürnberg 15
Stockholm 15
Warsaw 15
Nuremberg 14
Palo Alto 14
Turku 14
Da Nang 13
Genoa 13
Indiana 13
Mexico City 13
Palermo 13
Quito 13
San Francisco 13
Brasília 12
Brooklyn 12
Padova 12
Saint Petersburg 12
Shanghai 12
Tappahannock 12
Auburn Hills 11
Bogotá 11
Brescia 11
Catania 11
Lappeenranta 11
Baghdad 10
Belo Horizonte 10
Jakarta 10
Kraków 10
Miami 10
Rio de Janeiro 10
Totale 48.686
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Nome #
Perché il logaritmo della somma non è uguale alla somma dei logaritmi: gli operatori lineari 1.590
Il principio di Huygens Fresnel e la diffrazione 820
Size-dependent reversal of the elastic interaction energy between misfit nanostructures 630
The Unexpected Role of Arsenic in Driving the Selective Growth of InAs Quantum Dots on GaAs 616
Atomi,Molecole e Solidi: Esercizi risolti 614
Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001) 569
2D Voronoi tessellation generated by lines and belts of dots 530
ArF excimer laser deposited tin oxide films studied by "in situ" surface diagnostics and by synchrotron radiation induced UV photoemission 518
Idrogeno ed elio : atomi di storia 510
A Highly Emissive Water-Soluble Phosphorus Corrole 508
Impingement factor in the case of phase transformations governed by spatially correlated nucleation 499
XPS and STM study of Mn incorporation on the GaAs(001) surface 499
Demonstration of Avrami's kinetics: Connection with rate equations for clustering on surfaces 497
Electronic anisotropy of the GaAs(001) surface studied by energy loss spectroscopy 494
A synchrotron radiation photoemission study of the oxidation of tin 494
Avrami's kinetic approach for describing Volmer Weber growth mode at solid surfaces studied via PES and AES 493
Scaling law and dynamical exponent in the Volmer-Weber growth mode: silver on GaAs(001)2 x 4 490
Beneficial defects: Exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires 487
Comparative study of approaches based on the differential critical region and correlation functions in modeling phase-transformation kinetics 486
Effect of the impingement on the kinetics of island aggregation in the post-nucleation stage of film growth at solid surfaces 485
Shaping Ge islands on Si(001) surfaces with misorientation angle 484
Structural study of the InAs quantum-dot nucleation on GaAs(001) 482
Step erosion during nucleation of InAsGaAs (001) quantum dots 481
Film growth viewed as stochastic dot processes 479
Modeling adatom life time in thin film growth in case of spatially correlated nuclei 475
Anisotropy of the GaAs(001)-beta 2(2x4) surface from high-resolution electron energy loss spectroscopy 472
How the nonrandom distribution of nuclei affects the island density in thin-film growth 468
Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy 468
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 466
Adsorption of molecular oxygen on GaAs(001) studied using high-resolution electron energy-loss spectroscopy 466
Mean field approach for describing thin film morphology 465
A study of the pair distribution function of self-organized Ge quantum dots 465
Breaking elastic field symmetry in the Ge/Si(001) growth with substrate vicinality 465
Stochastic transformation of points in polygons according to the Voronoi tessellation: Microstructural description 465
Self-assembly of Ge quantum dots on Silicon:An example of controlled nanomanufacturing 465
Coarsening effect on island-size scaling: The model case InAs/GaAs(001) 463
Dirac delta nucleation in the framework of Avrami's model: The case of diamond growth on deformed Si(100) 460
Kinetics of island density in thin film growth in the framework of statistical mechanics of rigid disks 458
Dynamic behavior of silver islands growing on GaAs(001)2X4 substrate 458
Atomic Force microscopy analyses of InAs/GaAs heterostructures grown by MBE 454
Turbulent convective flows in the solar photospheric plasma 453
The GaAS(001)-c(4x4) surface: a new perspective from energy loss spectra 452
Analytical versus numerical approaches to the kinetics of cluster impingement in thin-film nucleation at solid surfaces 452
Comparative study of Ag growth on GaAs(001) and (110) surfaces 451
Selective growth of InAs quantum dots on SiO2-masked GaAs 448
Heteroepitaxy of Ge on singular and vicinal Si surfaces: Elastic field symmetry and nanostructure growth 448
InAs/GaAs(001) epitaxy: Kinetic effects in the two-dimensional to three-dimensional transition 447
How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs/GaAs(001) 446
I fenomeni fisici e chimici irreversibili: La diffusione 445
Morphology of self-assembled InAs quantum dots on GaAs(001) 444
Order and randomness in Kolmogorov–Johnson–Mehl–Avrami-type phase transitions 444
Kinetics study of the GaP(110)/Cu interface via P L2,3VV Auger line shape and x-ray-photoemission spectroscopies 442
Beyond the constraints underlying Kolmogorov-Johnson-Mehl-Avrami theory related to the growth laws 442
The influence of steps on the island distribution function in thin solid film formation 441
Morphological instabilities of the InAs/GaAs(001) interface and their effect on the self-assembling of InAs quantum-dot arrays 439
Electron energy loss study of Ag- and Au-GaAs(110) interfaces 438
Interplay between Kolmogorov-Johnson-Mehl-Avrami kinetics and Poisson-Voronoi tessellation 437
The influence of the wetting layer morphology on the nucleation and the evolution of InAs/GaAs (001) Quantum Dots 436
Modelling of the reactive interface formation on Bi2Sr2CaCu2O8 436
GaAs detectors for underground physics 436
Role of patterning in islands nucleation on semiconductor surfaces 435
Self-assembly of InAs and Si/Ge quantum dots on structured surfaces 435
Ge growth on vicinal Si(001)surfaces: islands’ shape and pair interaction vs miscut angle 434
Effects of substrate vicinality on 3D islanding in Ge/Si epitaxy 432
Bethe-lattice approach for electronegativity calculation in amorphous alloys and its correlation with the chemical shift: alpha-SiOx and alpha-SiNx cases 431
Irreversible order-disorder transformation of Ge(0 0 1) probed by scanning tunnelling microscopy 431
Morphology of the Fe, Cr and Ge/Bi2Sr2CaCu2O8 reactive interfaces from XPS and STM analyses 430
Surface versus bulk contributions from reflectance anisotropy and electron energy loss spectra of the GaAs(001)-c(4x4) surface 428
Towards a Controlled Growth of Self-assembled Nanostructures: Shaping, Ordering, and Localization in Ge/Si Heteroepitaxy 428
Mean field approach for describing thin film morphology: 2. Adatom life time 428
Observation of interface states by high-resolution electron-energy-loss spectroscopy in metal-GaAs(110) junctions 427
Towards the ordering of Ge nanoislands on Si(001) surface with misorientation angle 427
The entangled role of strain and diffusion in driving the spontaneous formation of atolls and holes in Ge/Si(111) heteroepitaxy 427
Study of the defects induced by low-energy (100 eV) hydrogen-ions on amorphous silicon dioxide 425
Ordering of Ge islands on Si(001) substrates patterned by nanoindentation 425
Extended fine-structure in secondary backscattered electrons 423
In situ X-ray absorption measurements of the Cu/MgO(0 0 1) interface 422
Ripple-to-dome transition: The growth of Ge on Si(1 1 10) vicinal surface 419
Beyond the Kolmogorov Johnson Mehl Avrami kinetics: inclusion of the spatial correlation 418
I fenomeni fisici e chimici irreversibili: la teoria termodinamica dell'osmosi e la sua verifica sperimentale 418
Comparative study of low temperature growth of InAs and InMnAs quantum dots 417
The InAs/GaAs(001) Quantum Dots Transition: Advances on Understanding 417
Hugh-like island growth of Ge on strained vicinal Si(111) surfaces 417
Microscopic aspects of the Fe/Bi2Sr2CaCu2O8 reactive interface 416
The monitoring of 2d-3d transition for InAs/GaAs (001) self-assembled quantum dots by atomic force microscopy 415
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 415
Roughness in the Kolmogorov-Johnson-Mehl-Avrami framework: extension to (2+1)D of the Trofimov-Park model 413
Comparison between extended x-ray-absorption and extended electron energy-loss fine-structure results above the M2,3 edge of cobalt 412
Orientational phase diagram of the epitaxially strained Si(001): evidence of a singular (105) face 411
Single quantum dot emission by nanoscale selective growth of InAs on GaAs: A bottom-up approach 410
Corroles at the Real Solid–Liquid Interface: In Situ STM Investigation of a Water-Soluble Corrole Layer Deposited onto Au(111) 410
Kinetics of cluster impingement in thin film nucleation at solid surfaces: estimation of the collision series up to the four order term 409
Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth 409
On the size distribution function of diamoind nano-crystals grown on surfaces 408
Temperature-dependent Cu interface growth on GaP(110) via Auger lineshape and X-ray photoemission spectroscopies 406
Kinetic aspects of the morphology of self-assembled InAs quantum dots on GaAs(001) 405
Scaling, Voronoi Tessellation and KJMA: the distribution function in thin solid films 404
Evidence of siox suboxides at ar ion etched-silica surfaces 400
Temperature dependence of the size distribution function of InAs quantum dots on GaAs(001) 400
Evidence of SI-OH soecies at the surface of aged silica 398
Totale 46.800
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Categoria #
all - tutte 125.619
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 125.619
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.176 0 0 0 71 54 125 83 74 139 122 74 434
2022/20232.007 188 130 27 322 199 436 153 115 197 15 170 55
2023/2024898 102 36 53 29 65 205 65 57 29 61 47 149
2024/20253.917 156 713 392 224 111 212 350 325 330 260 514 330
2025/20265.063 360 307 563 443 424 242 548 645 587 434 268 242
2026/20271.889 240 256 1.006 387 0 0 0 0 0 0 0 0
Totale 58.947