FANFONI, MASSIMO

FANFONI, MASSIMO  

Dipartimento di Fisica  

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Risultati 1 - 20 di 135 (tempo di esecuzione: 0.041 secondi).
Data di pubblicazione Titolo Autore(i) Tipo File
1-gen-2016 2D Voronoi tessellation generated by lines and belts of dots Fanfoni, M; Filabozzi, A; Placidi, E; Patella, F; Balzarotti, A; Arciprete, F Articolo su rivista
1-gen-2008 A study of the pair distribution function of self-organized Ge quantum dots Bernardi, M; Sgarlata, A; Fanfoni, M; Balzarotti, A; Motta, N Articolo su rivista
1-gen-1994 A synchrotron radiation photoemission study of the oxidation of tin De Padova, P; Fanfoni, M; Larciprete, R; Mangiantini, M; Priori, S; Perfetti, P Articolo su rivista
1-gen-2019 Abrupt changes in the graphene on Ge(001) system at the onset of surface melting Persichetti, L; Di Gaspare, L; Fabbri, F; Scaparro, Am; Notargiacomo, A; Sgarlata, A; Fanfoni, M; Miseikis, V; Coletti, C; De Seta, M Articolo su rivista
1-gen-2006 Adsorption of molecular oxygen on GaAs(001) studied using high-resolution electron energy-loss spectroscopy Placidi, E; Hogan, C; Arciprete, F; Fanfoni, M; Patella, F; DEL SOLE, R; Balzarotti, A Articolo su rivista
1-gen-1999 Analytical versus numerical approaches to the kinetics of cluster impingement in thin-film nucleation at solid surfaces Volpe, M; Fanfoni, M; Tomellini, M; Sessa, V Articolo su rivista
1-gen-2003 Anisotropy of the GaAs(001)-beta 2(2x4) surface from high-resolution electron energy loss spectroscopy Balzarotti, A; Placidi, E; Arciprete, F; Fanfoni, M; Patella, F Articolo su rivista
1-gen-2006 Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001) Patella, F; Arciprete, F; Fanfoni, M; Balzarotti, A; Placidi, E Articolo su rivista
1-gen-1993 ArF excimer laser deposited tin oxide films studied by "in situ" surface diagnostics and by synchrotron radiation induced UV photoemission Larciprete, R; Borsella, E; De Padova, P; Fanfoni, M; Mangiantini, M; Perfetti, P Articolo su rivista
1-gen-2004 Atomi,Molecole e Solidi: Esercizi risolti Balzarotti, A; Cini, M; Fanfoni, M Contributo in libro
1-gen-2005 Atomic Force microscopy analyses of InAs/GaAs heterostructures grown by MBE Bute, O; Arciprete, F; Patella, F; Balzarotti, A; Fanfoni, M; Cimpoca, G Intervento a convegno
1-gen-1995 Avrami's kinetic approach for describing Volmer Weber growth mode at solid surfaces studied via PES and AES Fanfoni, M; Tomellini, M Intervento a convegno
1-gen-2014 Beneficial defects: Exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires Persichetti, L; Sgarlata, A; Mori, S; Notarianni, M; Cherubini, V; Fanfoni, M; Motta, N; Balzarotti, A Articolo su rivista
1-gen-1996 Bethe-lattice approach for electronegativity calculation in amorphous alloys and its correlation with the chemical shift: alpha-SiOx and alpha-SiNx cases Fanfoni, M; Fortunato, G Articolo su rivista
1-gen-2012 Beyond the constraints underlying Kolmogorov-Johnson-Mehl-Avrami theory related to the growth laws Tomellini, M; Fanfoni, M Articolo su rivista
1-gen-2003 Beyond the Kolmogorov Johnson Mehl Avrami kinetics: inclusion of the spatial correlation Fanfoni, M; Tomellini, M Articolo su rivista
1-gen-2011 Breaking elastic field symmetry in the Ge/Si(001) growth with substrate vicinality Persichetti, L; Sgarlata, A; Fanfoni, M; Balzarotti, A Articolo su rivista
1-gen-2012 Coarsening effect on island-size scaling: The model case InAs/GaAs(001) Fanfoni, M; Arciprete, F; Tirabassi, C; Del Gaudio, D; Filabozzi, A; Balzarotti, A; Patella, F; Placidi, E Articolo su rivista
1-gen-2019 Comment on “The irrelevance of phantom nuclei in crystallization kinetics: An integral equation approach” Tomellini, M; Fanfoni, M Articolo su rivista
1-gen-1998 Comparative study of Ag growth on GaAs(001) and (110) surfaces Fanfoni, M; Arciprete, F; Patella, F; Boselli, A; Sgarlata, A; Motta, N; Balzarotti, A Articolo su rivista