A complete description of Ge growth on vicinal Si(001) surfaces in the angular miscut range 0 –8 is presented. The key role of substrate vicinality is clarified from the very early stages of Ge deposition up to the nucleation of 3D islands. By a systematic scanning tunneling microscopy investigation we are able to explain the competition between step-flow growth and 2D nucleation and the progressive elongation of the 3D islands along the miscut direction [110]. Using finite element calculations, we find a strict correlation between the morphological evolution and the energetic factors which govern the f105g faceting at atomic scale.
Persichetti, L., Sgarlata, A., Fanfoni, M., Balzarotti, A. (2010). Shaping Ge islands on Si(001) surfaces with misorientation angle. PHYSICAL REVIEW LETTERS, 104, 036104 [10.1103/PhysRevLett.104.036104].
Shaping Ge islands on Si(001) surfaces with misorientation angle
Persichetti, L;SGARLATA, ANNA;FANFONI, MASSIMO;BALZAROTTI, ADALBERTO
2010-01-01
Abstract
A complete description of Ge growth on vicinal Si(001) surfaces in the angular miscut range 0 –8 is presented. The key role of substrate vicinality is clarified from the very early stages of Ge deposition up to the nucleation of 3D islands. By a systematic scanning tunneling microscopy investigation we are able to explain the competition between step-flow growth and 2D nucleation and the progressive elongation of the 3D islands along the miscut direction [110]. Using finite element calculations, we find a strict correlation between the morphological evolution and the energetic factors which govern the f105g faceting at atomic scale.Questo articolo è pubblicato sotto una Licenza Licenza Creative Commons
