We have investigated by atomic force microscopy subsequent stages of the heteroepitaxy of InAs on GaAs(001) from the initial formation of the strained two-dimensional wetting layer up to the development of three-dimensional quantum dots. We evidence structural features that play a role in the two-to-three-dimensional transition and discuss their contribution to the final morphology of the self-assembled nanoparticles. (C) 2003 Elsevier Science Ltd. All rights reserved.
Patella, F., Nufris, S., Arciprete, F., Fanfoni, M., Placidi, E., Sgarlata, A., et al. (2003). Structural study of the InAs quantum-dot nucleation on GaAs(001). In Microelectronics Journal [10.1016/S0026-2692(03)00038-7].
Structural study of the InAs quantum-dot nucleation on GaAs(001)
PATELLA, FULVIA;ARCIPRETE, FABRIZIO;FANFONI, MASSIMO;SGARLATA, ANNA;BALZAROTTI, ADALBERTO
2003-01-01
Abstract
We have investigated by atomic force microscopy subsequent stages of the heteroepitaxy of InAs on GaAs(001) from the initial formation of the strained two-dimensional wetting layer up to the development of three-dimensional quantum dots. We evidence structural features that play a role in the two-to-three-dimensional transition and discuss their contribution to the final morphology of the self-assembled nanoparticles. (C) 2003 Elsevier Science Ltd. All rights reserved.Questo articolo è pubblicato sotto una Licenza Licenza Creative Commons
