High-resolution electron-energy-loss spectroscopy (EELS) has been applied to investigate the electronic structure of the GaAs(001)-c(4x4) and beta 2(2x4) reconstructions by means of successive exposure to molecular oxygen. Measurements have been performed on high-quality samples grown in situ by molecular beam epitaxy (MBE). We coupled the experimental findings with calculated spectra [density functional theory in the local density approximation (DFT-LDA)] to investigate the origin of surface states involved in the transitions and possible mechanisms of oxidation.
Placidi, E., Hogan, C., Arciprete, F., Fanfoni, M., Patella, F., DEL SOLE, R., et al. (2006). Adsorption of molecular oxygen on GaAs(001) studied using high-resolution electron energy-loss spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 73(20) [10.1103/PhysRevB.73.205345].
Adsorption of molecular oxygen on GaAs(001) studied using high-resolution electron energy-loss spectroscopy
ARCIPRETE, FABRIZIO;FANFONI, MASSIMO;PATELLA, FULVIA;DEL SOLE, RODOLFO;BALZAROTTI, ADALBERTO
2006-01-01
Abstract
High-resolution electron-energy-loss spectroscopy (EELS) has been applied to investigate the electronic structure of the GaAs(001)-c(4x4) and beta 2(2x4) reconstructions by means of successive exposure to molecular oxygen. Measurements have been performed on high-quality samples grown in situ by molecular beam epitaxy (MBE). We coupled the experimental findings with calculated spectra [density functional theory in the local density approximation (DFT-LDA)] to investigate the origin of surface states involved in the transitions and possible mechanisms of oxidation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
