Through high-resolution electron energy loss spectroscopy, the Ag/GaAs(001) 2x4 and Ag/GaAs(001) 4x2 interfaces are investigated. The results are compared both with each other and with those previously obtained for the Ag/GaAs(110) interface. X-ray photo emission spectroscopy and scanning tunneling microscopy have also been employed. As the Ag film grows, it forms 3D islands (Volmer-Weber growth mode) that, with respect to those of the (110) surface, are more in number and flatter. Moreover, at odds with the ( 110) surface, a continuum of states in the energy range of the gap forms at the early stage of junction formation. However. the band-gap losses come from the perimeter of the islands as in the (110) case. (C) 1998 Elsevier Science B.V. All rights reserved.
Fanfoni, M., Arciprete, F., Patella, F., Boselli, A., Sgarlata, A., Motta, N., et al. (1998). Comparative study of Ag growth on GaAs(001) and (110) surfaces. SURFACE SCIENCE, 419(1), 24-28 [10.1016/S0039-6028(98)00766-3].
Comparative study of Ag growth on GaAs(001) and (110) surfaces
FANFONI, MASSIMO;ARCIPRETE, FABRIZIO;PATELLA, FULVIA;SGARLATA, ANNA;BALZAROTTI, ADALBERTO
1998-01-01
Abstract
Through high-resolution electron energy loss spectroscopy, the Ag/GaAs(001) 2x4 and Ag/GaAs(001) 4x2 interfaces are investigated. The results are compared both with each other and with those previously obtained for the Ag/GaAs(110) interface. X-ray photo emission spectroscopy and scanning tunneling microscopy have also been employed. As the Ag film grows, it forms 3D islands (Volmer-Weber growth mode) that, with respect to those of the (110) surface, are more in number and flatter. Moreover, at odds with the ( 110) surface, a continuum of states in the energy range of the gap forms at the early stage of junction formation. However. the band-gap losses come from the perimeter of the islands as in the (110) case. (C) 1998 Elsevier Science B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
