We compare, by high-resolution electron-energy-loss spectroscopy (HREELS), the electronic structure of the GaAs(110)1x1 surface and that of the GaAs(001)2x4 As-rich surface in the energy-loss region 0.5-5 eV. The HREEL spectra are interpreted in terms of realistic calculations. The spectral features above the gap are assigned to electronic transitions involving surface and/or bulk states. Losses at energies within the gap are associated to defect states at the surface. [S0163-1829(98)51236-2].
Arciprete, F., Patella, F., Balzarotti, A., Fanfoni, M., Motta, N., Sgarlata, A., et al. (1998). Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 58(16), R10139-R10142.
Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy
ARCIPRETE, FABRIZIO;PATELLA, FULVIA;BALZAROTTI, ADALBERTO;FANFONI, MASSIMO;SGARLATA, ANNA;
1998-01-01
Abstract
We compare, by high-resolution electron-energy-loss spectroscopy (HREELS), the electronic structure of the GaAs(110)1x1 surface and that of the GaAs(001)2x4 As-rich surface in the energy-loss region 0.5-5 eV. The HREEL spectra are interpreted in terms of realistic calculations. The spectral features above the gap are assigned to electronic transitions involving surface and/or bulk states. Losses at energies within the gap are associated to defect states at the surface. [S0163-1829(98)51236-2].I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
