We compare, by high-resolution electron-energy-loss spectroscopy (HREELS), the electronic structure of the GaAs(110)1x1 surface and that of the GaAs(001)2x4 As-rich surface in the energy-loss region 0.5-5 eV. The HREEL spectra are interpreted in terms of realistic calculations. The spectral features above the gap are assigned to electronic transitions involving surface and/or bulk states. Losses at energies within the gap are associated to defect states at the surface. [S0163-1829(98)51236-2].
Arciprete, F., Patella, F., Balzarotti, A., Fanfoni, M., Motta, N., Sgarlata, A., et al. (1998). Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 58(16), R10139-R10142.
Tipologia: | Articolo su rivista |
Citazione: | Arciprete, F., Patella, F., Balzarotti, A., Fanfoni, M., Motta, N., Sgarlata, A., et al. (1998). Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 58(16), R10139-R10142. |
IF: | Con Impact Factor ISI |
Lingua: | English |
Settore Scientifico Disciplinare: | Settore FIS/03 - Fisica della Materia |
Revisione (peer review): | Sì, ma tipo non specificato |
Tipo: | Articolo |
Rilevanza: | Rilevanza internazionale |
Stato di pubblicazione: | Pubblicato |
Data di pubblicazione: | 1998 |
Titolo: | Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy |
Autori: | |
Autori: | Arciprete, F; Patella, F; Balzarotti, A; Fanfoni, M; Motta, N; Sgarlata, A; Boselli, A; Onida, G; Shkrebtii, AI; Del Sole, R |
Appare nelle tipologie: | 01 - Articolo su rivista |