We compare, by high-resolution electron-energy-loss spectroscopy (HREELS), the electronic structure of the GaAs(110)1x1 surface and that of the GaAs(001)2x4 As-rich surface in the energy-loss region 0.5-5 eV. The HREEL spectra are interpreted in terms of realistic calculations. The spectral features above the gap are assigned to electronic transitions involving surface and/or bulk states. Losses at energies within the gap are associated to defect states at the surface. [S0163-1829(98)51236-2].

Arciprete, F., Patella, F., Balzarotti, A., Fanfoni, M., Motta, N., Sgarlata, A., et al. (1998). Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 58(16), R10139-R10142.

Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy

ARCIPRETE, FABRIZIO;PATELLA, FULVIA;BALZAROTTI, ADALBERTO;FANFONI, MASSIMO;SGARLATA, ANNA;
1998-01-01

Abstract

We compare, by high-resolution electron-energy-loss spectroscopy (HREELS), the electronic structure of the GaAs(110)1x1 surface and that of the GaAs(001)2x4 As-rich surface in the energy-loss region 0.5-5 eV. The HREEL spectra are interpreted in terms of realistic calculations. The spectral features above the gap are assigned to electronic transitions involving surface and/or bulk states. Losses at energies within the gap are associated to defect states at the surface. [S0163-1829(98)51236-2].
1998
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/03 - FISICA DELLA MATERIA
English
Con Impact Factor ISI
RESOLVED INVERSE PHOTOEMISSION; SCANNING-TUNNELING-MICROSCOPY; MOLECULAR-BEAM EPITAXY; INTERFACE STATES; WORK FUNCTION; RECONSTRUCTIONS; STOICHIOMETRY; REFLECTIVITY; ANISOTROPY; SI(111)2X1
Arciprete, F., Patella, F., Balzarotti, A., Fanfoni, M., Motta, N., Sgarlata, A., et al. (1998). Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 58(16), R10139-R10142.
Arciprete, F; Patella, F; Balzarotti, A; Fanfoni, M; Motta, N; Sgarlata, A; Boselli, A; Onida, G; Shkrebtii, A; Del Sole, R
Articolo su rivista
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/45845
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 3
  • ???jsp.display-item.citation.isi??? 3
social impact