We have studied the evolution of the GaP(110)/Cu interface as prepared at room-temperature (RT) versus low-temperature (LT100 K) conditions. Electron-excited P L2,3VV and Cu M1VV Auger line shapes and x-ray-excited (h=1253.6 eV) Ga 2p3/2, Ga 3d, P 2p, Cu 2p3/2, and Cu 3p core-level emissions were followed as a function of the Cu coverage (2 up to 80). Regardless of the substrate temperature, substrate disruption is observed at 1 monolayer Cu, with P atoms participating in chemical bonds with deposited Cu. In parallel, the topmost Ga atoms are dislodged from their pristine locations and segregate in a metalliclike environment. These processes persist in the intermediate-coverage range (212 Cu) at both temperatures, being only relatively attenuated at LT. At very high Cu thicknesses, strong chemical intermixing and out-diffusion of substrate-derived species are still observed at RT, while these processes are nearly completely inhibited at LT. © 1990 The American Physical Society.

Sancrotti, M., Ciccacci, F., Fanfoni, M., & Chiaradia, P. (1990). Kinetics study of the GaP(110)/Cu interface via P L2,3VV Auger line shape and x-ray-photoemission spectroscopies. PHYSICAL REVIEW. B, CONDENSED MATTER, 42(6), 3745-3748 [10.1103/PhysRevB.42.3745].

Kinetics study of the GaP(110)/Cu interface via P L2,3VV Auger line shape and x-ray-photoemission spectroscopies

FANFONI, MASSIMO;CHIARADIA, PIETRO
1990

Abstract

We have studied the evolution of the GaP(110)/Cu interface as prepared at room-temperature (RT) versus low-temperature (LT100 K) conditions. Electron-excited P L2,3VV and Cu M1VV Auger line shapes and x-ray-excited (h=1253.6 eV) Ga 2p3/2, Ga 3d, P 2p, Cu 2p3/2, and Cu 3p core-level emissions were followed as a function of the Cu coverage (2 up to 80). Regardless of the substrate temperature, substrate disruption is observed at 1 monolayer Cu, with P atoms participating in chemical bonds with deposited Cu. In parallel, the topmost Ga atoms are dislodged from their pristine locations and segregate in a metalliclike environment. These processes persist in the intermediate-coverage range (212 Cu) at both temperatures, being only relatively attenuated at LT. At very high Cu thicknesses, strong chemical intermixing and out-diffusion of substrate-derived species are still observed at RT, while these processes are nearly completely inhibited at LT. © 1990 The American Physical Society.
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/03 - Fisica della Materia
English
Sancrotti, M., Ciccacci, F., Fanfoni, M., & Chiaradia, P. (1990). Kinetics study of the GaP(110)/Cu interface via P L2,3VV Auger line shape and x-ray-photoemission spectroscopies. PHYSICAL REVIEW. B, CONDENSED MATTER, 42(6), 3745-3748 [10.1103/PhysRevB.42.3745].
Sancrotti, M; Ciccacci, F; Fanfoni, M; Chiaradia, P
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/45842
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