We have analysed by atomic force microscopy the InAs on GaAs(001) system prepared by molecular beam epitaxy. Subsequent stages of the heteroepitaxial growth have been investigated starting from the initial formation of the strained two-dimensional wetting layer up to the growth of three-dimensional self-assembled quantum dots. In particular, we report on the structural characterization near the critical thickness and discuss the role of different features that influence the morphology of InAs quantum dots.
Nufris, S.M., Arciprete, F., Patella, F., Placidi, E., Fanfoni, M., Sgarlata, A., et al. (2004). Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth. In Institute Physics Conference Series (pp.195-198).
Autori: | |
Autori: | Nufris, SM; Arciprete, F; Patella, F; Placidi, E; Fanfoni, M; Sgarlata, A; Balzarotti, A |
Titolo: | Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth |
Nome del convegno: | Design and Nature II: Comparing Design in Nature with Science and Engineering |
Luogo del convegno: | Rhodes |
Anno del convegno: | 28 June 2004 through 30 June 2004 |
Enti collegati al convegno: | Wessex Institute of Technology, Southampton, UK;ONRIFO, Office of Naval Research International Field Office |
Rilevanza: | Rilevanza internazionale |
Sezione: | contributo |
Data di pubblicazione: | 2004 |
Settore Scientifico Disciplinare: | Settore FIS/03 - Fisica della Materia |
Lingua: | English |
Tipologia: | Intervento a convegno |
Citazione: | Nufris, S.M., Arciprete, F., Patella, F., Placidi, E., Fanfoni, M., Sgarlata, A., et al. (2004). Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth. In Institute Physics Conference Series (pp.195-198). |
Appare nelle tipologie: | 02 - Intervento a convegno |