We have analysed by atomic force microscopy the InAs on GaAs(001) system prepared by molecular beam epitaxy. Subsequent stages of the heteroepitaxial growth have been investigated starting from the initial formation of the strained two-dimensional wetting layer up to the growth of three-dimensional self-assembled quantum dots. In particular, we report on the structural characterization near the critical thickness and discuss the role of different features that influence the morphology of InAs quantum dots.

Nufris, S., Arciprete, F., Patella, F., Placidi, E., Fanfoni, M., Sgarlata, A., et al. (2004). Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth. In Institute Physics Conference Series (pp.195-198).

Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth

ARCIPRETE, FABRIZIO;PATELLA, FULVIA;FANFONI, MASSIMO;SGARLATA, ANNA;BALZAROTTI, ADALBERTO
2004

Abstract

We have analysed by atomic force microscopy the InAs on GaAs(001) system prepared by molecular beam epitaxy. Subsequent stages of the heteroepitaxial growth have been investigated starting from the initial formation of the strained two-dimensional wetting layer up to the growth of three-dimensional self-assembled quantum dots. In particular, we report on the structural characterization near the critical thickness and discuss the role of different features that influence the morphology of InAs quantum dots.
Design and Nature II: Comparing Design in Nature with Science and Engineering
Rhodes
28 June 2004 through 30 June 2004
Wessex Institute of Technology, Southampton, UK;ONRIFO, Office of Naval Research International Field Office
Rilevanza internazionale
contributo
Settore FIS/03 - Fisica della Materia
English
Annealing; Arsenic compounds; Atomic force microscopy; Evaporation; Heterojunctions; Low energy electron diffraction; Molecular beam epitaxy; Morphology; Nucleation; Semiconducting gallium; Semiconducting indium; Semiconductor quantum dots; Thermodynamics; Wetting; Self-assembling process; Surface mass transport; Topography; Wetting layer; Epitaxial growth
Intervento a convegno
Nufris, S., Arciprete, F., Patella, F., Placidi, E., Fanfoni, M., Sgarlata, A., et al. (2004). Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth. In Institute Physics Conference Series (pp.195-198).
Nufris, S; Arciprete, F; Patella, F; Placidi, E; Fanfoni, M; Sgarlata, A; Balzarotti, A
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/31173
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