High-resolution electron energy-loss measurements performed in situ on GaAS(001)-c(4 x 4) surfaces grown by molecular beam epitaxy reveal a number of intrinsic features so far unobserved. The one-to-one correspondence found between experimental and calculated electronic transitions provides for the first time a satisfactory understanding of the electronic properties of this prototype surface. The optical surface anisotropy originates entirely from very few atomic layers beneath the surface. This gives to the energy-loss anisotropy data two orders of magnitude higher surface sensitivity than that of reflectance difference spectroscopies. (C) 2002 Elsevier Science B.V. All rights reserved.

Balzarotti, A., Fanfoni, M., Patella, F., Arciprete, F., Placidi, E., Onida, G., et al. (2003). The GaAS(001)-c(4x4) surface: a new perspective from energy loss spectra. SURFACE SCIENCE LETTERS, 524, 71 [10.1016/S0039-6028(02)02540-2].

The GaAS(001)-c(4x4) surface: a new perspective from energy loss spectra

BALZAROTTI, ADALBERTO;FANFONI, MASSIMO;PATELLA, FULVIA;ARCIPRETE, FABRIZIO;DEL SOLE, RODOLFO
2003-01-01

Abstract

High-resolution electron energy-loss measurements performed in situ on GaAS(001)-c(4 x 4) surfaces grown by molecular beam epitaxy reveal a number of intrinsic features so far unobserved. The one-to-one correspondence found between experimental and calculated electronic transitions provides for the first time a satisfactory understanding of the electronic properties of this prototype surface. The optical surface anisotropy originates entirely from very few atomic layers beneath the surface. This gives to the energy-loss anisotropy data two orders of magnitude higher surface sensitivity than that of reflectance difference spectroscopies. (C) 2002 Elsevier Science B.V. All rights reserved.
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/03 - Fisica della Materia
English
Con Impact Factor ISI
Density functional calculations; Electron energy loss spectroscopy (EELS); Molecular beam epitaxy; Semiconducting surfaces; Surface electronic phenomena (work function, surface potential, surface states, etc.); Surface relaxation and reconstruction
Balzarotti, A., Fanfoni, M., Patella, F., Arciprete, F., Placidi, E., Onida, G., et al. (2003). The GaAS(001)-c(4x4) surface: a new perspective from energy loss spectra. SURFACE SCIENCE LETTERS, 524, 71 [10.1016/S0039-6028(02)02540-2].
Balzarotti, A; Fanfoni, M; Patella, F; Arciprete, F; Placidi, E; Onida, G; DEL SOLE, R
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/44935
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