We report on single dot microphotoluminescence (mu PL) emission at low temperature and low power from InAs dots grown by molecular beam epitaxy in nanoscale holes of a SiO2 mask deposited on GaAs(001). By comparing atomic force microscopy measurements with mu PL data, we show that the dot sizes inside the nanoholes are smaller than those of the dots nucleated on the extended GaAs surface. PL of dots spans a wide energy range depending on their size and on the thickness and composition of the InGaAs capping layer. Time-resolved PL experiments demonstrate a negligible loss of radiative recombination efficiency, proving highly effective in the site-controlled dot nucleation.

Patella, F., Arciprete, F., Placidi, E., Fanfoni, M., Balzarotti, A., Vinattieri, A., et al. (2008). Single quantum dot emission by nanoscale selective growth of InAs on GaAs: A bottom-up approach. APPLIED PHYSICS LETTERS, 93(23), 231904 [10.1063/1.3040327].

Single quantum dot emission by nanoscale selective growth of InAs on GaAs: A bottom-up approach

PATELLA, FULVIA;ARCIPRETE, FABRIZIO;FANFONI, MASSIMO;BALZAROTTI, ADALBERTO;
2008-01-01

Abstract

We report on single dot microphotoluminescence (mu PL) emission at low temperature and low power from InAs dots grown by molecular beam epitaxy in nanoscale holes of a SiO2 mask deposited on GaAs(001). By comparing atomic force microscopy measurements with mu PL data, we show that the dot sizes inside the nanoholes are smaller than those of the dots nucleated on the extended GaAs surface. PL of dots spans a wide energy range depending on their size and on the thickness and composition of the InGaAs capping layer. Time-resolved PL experiments demonstrate a negligible loss of radiative recombination efficiency, proving highly effective in the site-controlled dot nucleation.
2008
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/03 - FISICA DELLA MATERIA
English
Con Impact Factor ISI
Crystal growth; Epitaxial growth; Gallium alloys; Indium arsenide; Light emission; Molecular beams; Molecular dynamics; Nanostructured materials; Nanotechnology; Quantum electronics; Semiconducting gallium; Semiconducting indium; Semiconductor quantum dots; Semiconductor quantum wires; Atomic forces; Bottom-up; Capping layers; Dot sizes; Gaas(001); Low powers; Low temperatures; Nano holes; Nanoscale; Radiative recombination efficiencies; Selective growths; Single quantum dots; Time-resolved; Wide energy ranges; Luminescence
Patella, F., Arciprete, F., Placidi, E., Fanfoni, M., Balzarotti, A., Vinattieri, A., et al. (2008). Single quantum dot emission by nanoscale selective growth of InAs on GaAs: A bottom-up approach. APPLIED PHYSICS LETTERS, 93(23), 231904 [10.1063/1.3040327].
Patella, F; Arciprete, F; Placidi, E; Fanfoni, M; Balzarotti, A; Vinattieri, A; Cavigli, L; Abbarchi, M; Gurioli, M; Lunghi, L; Gerardino, A
Articolo su rivista
File in questo prodotto:
Non ci sono file associati a questo prodotto.

Questo articolo è pubblicato sotto una Licenza Licenza Creative Commons Creative Commons

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/29092
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 10
  • ???jsp.display-item.citation.isi??? 8
social impact