We discuss the self-aggregation process of InAs and Si-Ge quantum dots (QDs) on natural and patterned GaAs(00l) and Si(00l) and Si(l 11) surfaces, with reference to our recent studies with scanning tunnelling and atomic force microscopy and current experimental and theoretical works. Various methods for obtaining naturally structured surfaces are briefly surveyed, as the patterning formed by the surface instability and by the strain in mismatched heteroepitaxy, and the latest methods of pre-patterning and growth at selected sites are discussed. Basic topics are also addressed that determine the final morphology of QDs, such as the wetting layer formation, the elastic strain field and the two-dimensional to three-dimensional phase transition.
Patella, F., Sgarlata, A., Arciprete, F., Nufris, S., Szkutnik, P., Placidi, E., et al. (2004). Self-assembly of InAs and Si/Ge quantum dots on structured surfaces. JOURNAL OF PHYSICS. CONDENSED MATTER, 16(17) [10.1088/0953-8984/16/17/005].
Self-assembly of InAs and Si/Ge quantum dots on structured surfaces
PATELLA, FULVIA;SGARLATA, ANNA;ARCIPRETE, FABRIZIO;FANFONI, MASSIMO;BALZAROTTI, ADALBERTO
2004-01-01
Abstract
We discuss the self-aggregation process of InAs and Si-Ge quantum dots (QDs) on natural and patterned GaAs(00l) and Si(00l) and Si(l 11) surfaces, with reference to our recent studies with scanning tunnelling and atomic force microscopy and current experimental and theoretical works. Various methods for obtaining naturally structured surfaces are briefly surveyed, as the patterning formed by the surface instability and by the strain in mismatched heteroepitaxy, and the latest methods of pre-patterning and growth at selected sites are discussed. Basic topics are also addressed that determine the final morphology of QDs, such as the wetting layer formation, the elastic strain field and the two-dimensional to three-dimensional phase transition.Questo articolo è pubblicato sotto una Licenza Licenza Creative Commons
