A complete description of Ge growth on vicinal Si(001) surfaces is provided. The distinctive mechanisms of the epitaxial growth process on vicinal surfaces are clarified from the very early stages of Ge deposition to the nucleation of 3D islands. By interpolating high-resolution scanning tunneling microscopy measurements with continuum elasticity modeling, we assess the dependence of island’s shape and elastic interaction on the substrate misorientation. Our results confirm that vicinal surfaces offer an additional degree of control over the shape and symmetry of self-assembled nanostructures.
Persichetti, L., Sgarlata, A., Fanfoni, M., Balzarotti, A. (2011). Ge growth on vicinal Si(001)surfaces: islands’ shape and pair interaction vs miscut angle. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 11(10), 9185-9189 [10.1166/jnn.2011.4308].
Ge growth on vicinal Si(001)surfaces: islands’ shape and pair interaction vs miscut angle
Persichetti, L;SGARLATA, ANNA;FANFONI, MASSIMO;BALZAROTTI, ADALBERTO
2011-01-01
Abstract
A complete description of Ge growth on vicinal Si(001) surfaces is provided. The distinctive mechanisms of the epitaxial growth process on vicinal surfaces are clarified from the very early stages of Ge deposition to the nucleation of 3D islands. By interpolating high-resolution scanning tunneling microscopy measurements with continuum elasticity modeling, we assess the dependence of island’s shape and elastic interaction on the substrate misorientation. Our results confirm that vicinal surfaces offer an additional degree of control over the shape and symmetry of self-assembled nanostructures.Questo articolo è pubblicato sotto una Licenza Licenza Creative Commons
