We investigate the interdependent processes of strain and diffusion in the formation of holes and atolls obtained by rapid annealing of Ge/Si(111) islands at T ≈ 970 °C. We show that the shape evolution from islands to atolls and holes is closely captured by an analytical model including strain-driven diffusion. In the model, strain profiles obtained by finite element solutions of continuum elasticity equations are introduced in the diffusion equation as the source of a diffusion flux driven by the strain gradient. When the shape of the elastic field in Ge/Si(111) islands is coupled to diffusion, the morphology of the SiGe nanostructures observed after annealing is reproduced. © 2013 IOP Publishing Ltd.

Persichetti, L., Sgarlata, A., Fanfoni, M., & Balzarotti, A. (2013). The entangled role of strain and diffusion in driving the spontaneous formation of atolls and holes in Ge/Si(111) heteroepitaxy. JOURNAL OF PHYSICS. CONDENSED MATTER, 25(39), 395801 [10.1088/0953-8984/25/39/395801].

The entangled role of strain and diffusion in driving the spontaneous formation of atolls and holes in Ge/Si(111) heteroepitaxy

PERSICHETTI, LUCA;SGARLATA, ANNA;FANFONI, MASSIMO;BALZAROTTI, ADALBERTO
2013

Abstract

We investigate the interdependent processes of strain and diffusion in the formation of holes and atolls obtained by rapid annealing of Ge/Si(111) islands at T ≈ 970 °C. We show that the shape evolution from islands to atolls and holes is closely captured by an analytical model including strain-driven diffusion. In the model, strain profiles obtained by finite element solutions of continuum elasticity equations are introduced in the diffusion equation as the source of a diffusion flux driven by the strain gradient. When the shape of the elastic field in Ge/Si(111) islands is coupled to diffusion, the morphology of the SiGe nanostructures observed after annealing is reproduced. © 2013 IOP Publishing Ltd.
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/03 - Fisica della Materia
English
Condensed Matter Physics; Materials Science (all)
http://iopscience.iop.org/0953-8984/25/39/395801/pdf/0953-8984_25_39_395801.pdf
Persichetti, L., Sgarlata, A., Fanfoni, M., & Balzarotti, A. (2013). The entangled role of strain and diffusion in driving the spontaneous formation of atolls and holes in Ge/Si(111) heteroepitaxy. JOURNAL OF PHYSICS. CONDENSED MATTER, 25(39), 395801 [10.1088/0953-8984/25/39/395801].
Persichetti, L; Sgarlata, A; Fanfoni, M; Balzarotti, A
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/135841
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