Step instability and surface mass transport strongly influence the kinetics of the two- to three-dimensional (2D-3D) transition in InAs/GaAs self-assembly epitaxy. In this paper we report evidence of the step erosion of quantum dots (QDs) nucleated on step edges for samples having different surface morphologies and the explosive nucleation of 3D QDs triggered by it. Related issues such as the temperature dependence of the critical thickness, the volume dependence of the surface mass transport, and the scaling behaviour are illustrated by means of RHEED and AFM measurements and data analysis for small increments of InAs coverage throughout the 2D-3D transition.

Placidi, E., Arciprete, F., Fanfoni, M., Patella, F., Orsini, E., & Balzarotti, A. (2007). InAs/GaAs(001) epitaxy: Kinetic effects in the two-dimensional to three-dimensional transition. In Journal of Physics Condensed Matter. BRISTOL : IOP PUBLISHING LTD [10.1088/0953-8984/19/22/225006].

InAs/GaAs(001) epitaxy: Kinetic effects in the two-dimensional to three-dimensional transition

ARCIPRETE, FABRIZIO;FANFONI, MASSIMO;PATELLA, FULVIA;BALZAROTTI, ADALBERTO
2007

Abstract

Step instability and surface mass transport strongly influence the kinetics of the two- to three-dimensional (2D-3D) transition in InAs/GaAs self-assembly epitaxy. In this paper we report evidence of the step erosion of quantum dots (QDs) nucleated on step edges for samples having different surface morphologies and the explosive nucleation of 3D QDs triggered by it. Related issues such as the temperature dependence of the critical thickness, the volume dependence of the surface mass transport, and the scaling behaviour are illustrated by means of RHEED and AFM measurements and data analysis for small increments of InAs coverage throughout the 2D-3D transition.
3rd Nanocose Conference
Frascati, ITALY
OCT 03-05, 2005
Univ Roma Tor Vergata
Rilevanza nazionale
su invito
Settore FIS/03 - Fisica della Materia
eng
Atomic force microscopy; Data reduction; Epitaxial growth; Mass transfer; Self assembly; Surface morphology; Kinetic effects; Temperature dependence; Volume dependence; Indium compounds
Intervento a convegno
Placidi, E., Arciprete, F., Fanfoni, M., Patella, F., Orsini, E., & Balzarotti, A. (2007). InAs/GaAs(001) epitaxy: Kinetic effects in the two-dimensional to three-dimensional transition. In Journal of Physics Condensed Matter. BRISTOL : IOP PUBLISHING LTD [10.1088/0953-8984/19/22/225006].
Placidi, E; Arciprete, F; Fanfoni, M; Patella, F; Orsini, E; Balzarotti, A
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/34583
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