We present a detailed Atomic Force Microscopy study of InAs/GaAs (001) self-assembled quantum dots, grown by Molecular Beam Epitaxy, during its complete evolution cycle, transition from 2D islands to 3D islands. We created the dots by deposing InAs on a GaAs substrate. After a critical InAs coverage value is reached the dots become self-assembled due to strain. The resulting dots typically have a height of 5.7 nm and an emission at about 900 nm occurs until a second critical coverage point is traversed.

Bute, O., Cimpoca, G., Placidi, E., Arciprete, F., Patella, F., Fanfoni, M., et al. (2008). The monitoring of 2d-3d transition for InAs/GaAs (001) self-assembled quantum dots by atomic force microscopy. In Journal of Optoelectronics and Advanced Materials (pp.74-79). BUCHAREST-MAGURELE : NATL INST OPTOELECTRONICS.

The monitoring of 2d-3d transition for InAs/GaAs (001) self-assembled quantum dots by atomic force microscopy

ARCIPRETE, FABRIZIO;PATELLA, FULVIA;FANFONI, MASSIMO;BALZAROTTI, ADALBERTO
2008

Abstract

We present a detailed Atomic Force Microscopy study of InAs/GaAs (001) self-assembled quantum dots, grown by Molecular Beam Epitaxy, during its complete evolution cycle, transition from 2D islands to 3D islands. We created the dots by deposing InAs on a GaAs substrate. After a critical InAs coverage value is reached the dots become self-assembled due to strain. The resulting dots typically have a height of 5.7 nm and an emission at about 900 nm occurs until a second critical coverage point is traversed.
3rd International Conference on Imaging Techniques in Subatomic Physics, Astrophysics, Medicine, Biology and Industry
Stockholm, SWEDEN
JUN 27-30, 2006
Noble Inst Phys, Secta Mamea
Rilevanza internazionale
contributo
Settore FIS/03 - Fisica della Materia
English
nanomaterials; quantum dots; self assembling
Intervento a convegno
Bute, O., Cimpoca, G., Placidi, E., Arciprete, F., Patella, F., Fanfoni, M., et al. (2008). The monitoring of 2d-3d transition for InAs/GaAs (001) self-assembled quantum dots by atomic force microscopy. In Journal of Optoelectronics and Advanced Materials (pp.74-79). BUCHAREST-MAGURELE : NATL INST OPTOELECTRONICS.
Bute, O; Cimpoca, G; Placidi, E; Arciprete, F; Patella, F; Fanfoni, M; Balzarotti, A
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/29088
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 1
  • ???jsp.display-item.citation.isi??? 1
social impact