We present a detailed Atomic Force Microscopy study of InAs/GaAs (001) self-assembled quantum dots, grown by Molecular Beam Epitaxy, during its complete evolution cycle, transition from 2D islands to 3D islands. We created the dots by deposing InAs on a GaAs substrate. After a critical InAs coverage value is reached the dots become self-assembled due to strain. The resulting dots typically have a height of 5.7 nm and an emission at about 900 nm occurs until a second critical coverage point is traversed.
Bute, O., Cimpoca, G., Placidi, E., Arciprete, F., Patella, F., Fanfoni, M., et al. (2008). The monitoring of 2d-3d transition for InAs/GaAs (001) self-assembled quantum dots by atomic force microscopy. In Journal of Optoelectronics and Advanced Materials (pp.74-79). BUCHAREST-MAGURELE : NATL INST OPTOELECTRONICS.
The monitoring of 2d-3d transition for InAs/GaAs (001) self-assembled quantum dots by atomic force microscopy
ARCIPRETE, FABRIZIO;PATELLA, FULVIA;FANFONI, MASSIMO;BALZAROTTI, ADALBERTO
2008-01-01
Abstract
We present a detailed Atomic Force Microscopy study of InAs/GaAs (001) self-assembled quantum dots, grown by Molecular Beam Epitaxy, during its complete evolution cycle, transition from 2D islands to 3D islands. We created the dots by deposing InAs on a GaAs substrate. After a critical InAs coverage value is reached the dots become self-assembled due to strain. The resulting dots typically have a height of 5.7 nm and an emission at about 900 nm occurs until a second critical coverage point is traversed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
