We present a detailed scanning tunneling microscopy study which describes the morphological transition from ripple-to-dome islands during the growth of Ge on the vicinal Si 1 1 10 surface. Our experimental results show that the shape evolution of Ge islands on this surface is markedly different from that on the flat Si 001 substrate and is accomplished by agglomeration and coalescence of several ripples. By using published data of surface energy and finite-element analysis, we provide a meaningful explanation of our experimental observations.
Persichetti, L., Sgarlata, A., Fanfoni, M., Balzarotti, A. (2010). Ripple-to-dome transition: The growth of Ge on Si(1 1 10) vicinal surface. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 82(12), 121309 [10.1103/PhysRevB.82.121309].
Ripple-to-dome transition: The growth of Ge on Si(1 1 10) vicinal surface
Persichetti, L;SGARLATA, ANNA;FANFONI, MASSIMO;BALZAROTTI, ADALBERTO
2010-01-01
Abstract
We present a detailed scanning tunneling microscopy study which describes the morphological transition from ripple-to-dome islands during the growth of Ge on the vicinal Si 1 1 10 surface. Our experimental results show that the shape evolution of Ge islands on this surface is markedly different from that on the flat Si 001 substrate and is accomplished by agglomeration and coalescence of several ripples. By using published data of surface energy and finite-element analysis, we provide a meaningful explanation of our experimental observations.Questo articolo è pubblicato sotto una Licenza Licenza Creative Commons
