The low-energy (100 eV) hydrogen-ion bombardment effects on a-SiO2 have been investigated by using synchrotron radiation photoemission spectroscopies. The argon bombardment effects have also been studied, in order to discriminate between physical and chemical characters in the hydrogen/a-SiO2 interaction. Our results show that hydrogen treatment produces predominantly Si-H defects, which are observed to induce gap states in a-SiO2.

Fortunato, G., Mariucci, L., Pecora, A., Fanfoni, M., Priori, S. (1992). Study of the defects induced by low-energy (100 eV) hydrogen-ions on amorphous silicon dioxide. APPLIED PHYSICS LETTERS, 60(13), 1564-1566 [10.1063/1.107252].

Study of the defects induced by low-energy (100 eV) hydrogen-ions on amorphous silicon dioxide

FANFONI, MASSIMO;
1992-01-01

Abstract

The low-energy (100 eV) hydrogen-ion bombardment effects on a-SiO2 have been investigated by using synchrotron radiation photoemission spectroscopies. The argon bombardment effects have also been studied, in order to discriminate between physical and chemical characters in the hydrogen/a-SiO2 interaction. Our results show that hydrogen treatment produces predominantly Si-H defects, which are observed to induce gap states in a-SiO2.
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/03 - Fisica della Materia
English
THIN-FILM TRANSISTORS; INTERFACE; LAYER
Fortunato, G., Mariucci, L., Pecora, A., Fanfoni, M., Priori, S. (1992). Study of the defects induced by low-energy (100 eV) hydrogen-ions on amorphous silicon dioxide. APPLIED PHYSICS LETTERS, 60(13), 1564-1566 [10.1063/1.107252].
Fortunato, G; Mariucci, L; Pecora, A; Fanfoni, M; Priori, S
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/45867
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