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Persichetti, L., Sgarlata, A., Mattoni, G., Fanfoni, M., Balzarotti, A. (2012). Orientational phase diagram of the epitaxially strained Si(001): evidence of a singular (105) face. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 85(19), 195314 [10.1103/PhysRevB.85.195314].

Orientational phase diagram of the epitaxially strained Si(001): evidence of a singular (105) face

Persichetti, L;SGARLATA, ANNA;FANFONI, MASSIMO;BALZAROTTI, ADALBERTO
2012-05-11
11-mag-2012
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/03 - FISICA DELLA MATERIA
English
Con Impact Factor ISI
By exploiting the misfit strain of Ge on Si epitaxy, we examine the significant changes induced by surface stress in the polar structural phase diagram of Si(001) surfaces. Under compressive strain, the atomic and mesoscale structures of the vicinal Si(001) surfaces are converted into a new singular (105) face which does not exist on the strain-free equilibrium shape of Si and Ge. The observed structural modifications of substrates have far-reaching implications for the Stranski-Krastanov evolutionary path of three-dimensional islanding.
Persichetti, L., Sgarlata, A., Mattoni, G., Fanfoni, M., Balzarotti, A. (2012). Orientational phase diagram of the epitaxially strained Si(001): evidence of a singular (105) face. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 85(19), 195314 [10.1103/PhysRevB.85.195314].
Persichetti, L; Sgarlata, A; Mattoni, G; Fanfoni, M; Balzarotti, A
Articolo su rivista
01 - Articolo su rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/70908
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