The pair interaction between Ge islands on vicinal Si 001 substrates is investigated by scanning tunneling microscopy measurements as a function of the miscut angle. By the analysis of the nearest-neighbor island distributions, we assess the dependence of the local strain field on the substrate misorientation. We support our results by modeling elastic relaxation for different shapes and arrangements of islands with finite element calculations.
Persichetti, L., Sgarlata, A., Fanfoni, M., Balzarotti, A. (2010). Towards the ordering of Ge nanoislands on Si(001) surface with misorientation angle. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 81, 113409.
Towards the ordering of Ge nanoislands on Si(001) surface with misorientation angle
SGARLATA, ANNA;FANFONI, MASSIMO;BALZAROTTI, ADALBERTO
2010-01-01
Abstract
The pair interaction between Ge islands on vicinal Si 001 substrates is investigated by scanning tunneling microscopy measurements as a function of the miscut angle. By the analysis of the nearest-neighbor island distributions, we assess the dependence of the local strain field on the substrate misorientation. We support our results by modeling elastic relaxation for different shapes and arrangements of islands with finite element calculations.Questo articolo è pubblicato sotto una Licenza Licenza Creative Commons
