We have investigated, by means of atomic force microscopy, the complete evolution of InAs/GaAs(001) quantum dots as a function of deposited InAs. Direct evidence is found for step erosion by quantum dots nucleated onto the step edge and an estimate of the eroded volume is provided. By studying the quantum dots volume as a function of InAs coverage, we show that the wetting layer contribution is confined within a narrow range of coverage around the two- and three-dimensional transition. (c) 2005 American Institute of Physics.
Placidi, E., Arciprete, F., Sessi, V., Fanfoni, M., Patella, F., Balzarotti, A. (2005). Step erosion during nucleation of InAsGaAs (001) quantum dots. APPLIED PHYSICS LETTERS, 86(24), 1-3 [10.1063/1.1946181].
Step erosion during nucleation of InAsGaAs (001) quantum dots
ARCIPRETE, FABRIZIO;FANFONI, MASSIMO;PATELLA, FULVIA;BALZAROTTI, ADALBERTO
2005-01-01
Abstract
We have investigated, by means of atomic force microscopy, the complete evolution of InAs/GaAs(001) quantum dots as a function of deposited InAs. Direct evidence is found for step erosion by quantum dots nucleated onto the step edge and an estimate of the eroded volume is provided. By studying the quantum dots volume as a function of InAs coverage, we show that the wetting layer contribution is confined within a narrow range of coverage around the two- and three-dimensional transition. (c) 2005 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
