We have investigated, by means of atomic force microscopy, the complete evolution of InAs/GaAs(001) quantum dots as a function of deposited InAs. Direct evidence is found for step erosion by quantum dots nucleated onto the step edge and an estimate of the eroded volume is provided. By studying the quantum dots volume as a function of InAs coverage, we show that the wetting layer contribution is confined within a narrow range of coverage around the two- and three-dimensional transition. (c) 2005 American Institute of Physics.

Placidi, E., Arciprete, F., Sessi, V., Fanfoni, M., Patella, F., Balzarotti, A. (2005). Step erosion during nucleation of InAsGaAs (001) quantum dots. APPLIED PHYSICS LETTERS, 86(24), 1-3 [10.1063/1.1946181].

Step erosion during nucleation of InAsGaAs (001) quantum dots

ARCIPRETE, FABRIZIO;FANFONI, MASSIMO;PATELLA, FULVIA;BALZAROTTI, ADALBERTO
2005-01-01

Abstract

We have investigated, by means of atomic force microscopy, the complete evolution of InAs/GaAs(001) quantum dots as a function of deposited InAs. Direct evidence is found for step erosion by quantum dots nucleated onto the step edge and an estimate of the eroded volume is provided. By studying the quantum dots volume as a function of InAs coverage, we show that the wetting layer contribution is confined within a narrow range of coverage around the two- and three-dimensional transition. (c) 2005 American Institute of Physics.
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/03 - Fisica della Materia
English
Con Impact Factor ISI
Anisotropy; Atomic force microscopy; Cryptography; High energy electron diffraction; Nucleation; Optoelectronic devices; Semiconducting gallium arsenide; Semiconducting indium compounds; Stranski-Krastanov (S-K) growth mode; Surface mass transport; Three-dimensional transition; Wetting layers (WL); Semiconductor quantum dots
Placidi, E., Arciprete, F., Sessi, V., Fanfoni, M., Patella, F., Balzarotti, A. (2005). Step erosion during nucleation of InAsGaAs (001) quantum dots. APPLIED PHYSICS LETTERS, 86(24), 1-3 [10.1063/1.1946181].
Placidi, E; Arciprete, F; Sessi, V; Fanfoni, M; Patella, F; Balzarotti, A
Articolo su rivista
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/37179
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 46
  • ???jsp.display-item.citation.isi??? 45
social impact