IRIS
SGARLATA, ANNA
 Distribuzione geografica
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Continente #
NA - Nord America 33.954
AS - Asia 3.815
EU - Europa 3.461
SA - Sud America 517
Continente sconosciuto - Info sul continente non disponibili 320
AF - Africa 41
OC - Oceania 15
Totale 42.123
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Nazione #
US - Stati Uniti d'America 33.771
SG - Singapore 2.037
IT - Italia 826
CN - Cina 673
DE - Germania 589
UA - Ucraina 467
RU - Federazione Russa 443
BR - Brasile 380
HK - Hong Kong 323
IE - Irlanda 289
VN - Vietnam 277
GB - Regno Unito 220
FR - Francia 210
FI - Finlandia 141
SE - Svezia 112
JP - Giappone 100
KR - Corea 93
BD - Bangladesh 92
CA - Canada 83
MX - Messico 62
IN - India 43
CO - Colombia 33
EC - Ecuador 33
UZ - Uzbekistan 29
AR - Argentina 25
BE - Belgio 25
ID - Indonesia 25
NL - Olanda 25
ES - Italia 23
IQ - Iraq 21
PL - Polonia 21
EU - Europa 18
TR - Turchia 15
PE - Perù 14
AU - Australia 12
AT - Austria 11
CZ - Repubblica Ceca 11
MY - Malesia 11
PH - Filippine 11
ZA - Sudafrica 11
LT - Lituania 10
RO - Romania 9
VE - Venezuela 9
CL - Cile 8
GR - Grecia 8
PK - Pakistan 8
PY - Paraguay 7
AE - Emirati Arabi Uniti 6
JM - Giamaica 6
JO - Giordania 6
MA - Marocco 6
TH - Thailandia 6
UY - Uruguay 6
CR - Costa Rica 5
IL - Israele 5
KE - Kenya 5
NP - Nepal 5
OM - Oman 5
PT - Portogallo 5
SA - Arabia Saudita 5
DO - Repubblica Dominicana 4
EG - Egitto 4
HN - Honduras 4
KG - Kirghizistan 4
TN - Tunisia 4
TT - Trinidad e Tobago 4
DZ - Algeria 3
IR - Iran 3
LU - Lussemburgo 3
MD - Moldavia 3
NI - Nicaragua 3
SV - El Salvador 3
BG - Bulgaria 2
BO - Bolivia 2
BS - Bahamas 2
CI - Costa d'Avorio 2
DK - Danimarca 2
ET - Etiopia 2
KZ - Kazakistan 2
LB - Libano 2
NZ - Nuova Zelanda 2
PR - Porto Rico 2
SI - Slovenia 2
SN - Senegal 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AM - Armenia 1
AZ - Azerbaigian 1
BM - Bermuda 1
BY - Bielorussia 1
GE - Georgia 1
GT - Guatemala 1
HU - Ungheria 1
KN - Saint Kitts e Nevis 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
MK - Macedonia 1
NO - Norvegia 1
PA - Panama 1
PS - Palestinian Territory 1
Totale 41.817
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Città #
Woodbridge 9.373
Wilmington 8.615
Houston 8.289
Ann Arbor 866
Singapore 790
Fairfield 723
Ashburn 565
San Jose 541
Chandler 483
Jacksonville 405
Hong Kong 306
Seattle 304
Dublin 290
Beijing 276
Medford 224
Cambridge 216
New York 215
Council Bluffs 213
Dearborn 159
Rome 158
Santa Clara 150
The Dalles 138
Los Angeles 111
Lawrence 104
Ho Chi Minh City 88
Buffalo 72
Tokyo 71
Hanoi 69
Moscow 68
Mülheim 68
San Diego 60
Milan 58
Munich 47
Menlo Park 45
Boardman 44
Redwood City 41
Lauterbourg 38
São Paulo 37
Dallas 35
Helsinki 33
San Mateo 33
Chicago 30
London 28
Brussels 25
Toronto 24
Guangzhou 22
Phoenix 22
Norwalk 21
Zhengzhou 21
Nürnberg 20
Verona 20
Hefei 19
Montreal 18
Nanjing 18
Saint Petersburg 18
Atlanta 16
Mountain View 16
Orem 16
University Park 16
Lappeenranta 14
Nuremberg 14
Rio de Janeiro 14
Kunming 13
Washington 13
Columbus 12
Haiphong 12
Palo Alto 12
Quito 12
Shanghai 12
Turku 12
Frankfurt am Main 11
Manchester 11
Mexico City 11
Naples 11
Padova 11
Poplar 11
San Francisco 11
Baghdad 10
Bogotá 10
Boston 10
North Bergen 10
Redondo Beach 10
Trieste 10
Warsaw 10
Brooklyn 9
Da Nang 9
Falls Church 9
Guayaquil 9
Vancouver 9
Brasília 8
Brno 8
Denver 8
Florence 8
Johannesburg 8
Lima 8
Salvador 8
Shenyang 8
Tashkent 8
Vienna 8
Charlotte 7
Totale 35.210
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Nome #
Il principio di Huygens Fresnel e la diffrazione 795
Size-dependent reversal of the elastic interaction energy between misfit nanostructures 621
Valence charge fluctuations in YBa2Cu3O7-delta from core level spectroscopies 576
Interface formation between d metals and the Bi2Sr2CaCu2O8 surface 563
Idrogeno ed elio : atomi di storia 506
Carbon induced restructuring of the Si(111) surface 502
A Highly Emissive Water-Soluble Phosphorus Corrole 494
STM study of Si(111)7x7 reconstructed surface carbonization induced by acetylene 492
Carbon nanotube synthesis from germanium nanoparticles on patterned substrates 487
COPPER PHTHALOCYANINE ON SI(111)-7X7 AND SI(001)-2X1 - AN XPS/AES AND STM STUDY 485
Kelvin probe and scanning tunneling microscope characterization of Langmuir-Blodgett sapphyrin films 485
Beneficial defects: Exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires 477
Shaping Ge islands on Si(001) surfaces with misorientation angle 476
Structural study of the InAs quantum-dot nucleation on GaAs(001) 473
Real-time scanning tunneling microscopy observation of the evolution of Ge quantum dots on nanopatterned Si(001) surfaces 473
X-ray-photoemission-spectroscopy study of the surface deterioration of Bi2Sr2CaCu2O8 and Bi1.7Pb0.3Sr2CaCu2O8 single crystals at 26 K 463
Evolution of strained Ge islands grown on Si(111): a scanning probe microscopy study 462
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 460
Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy 460
Growth of ultrahigh-density quantum-confined germanium dots on SiO 2 thin films 459
Electronic correlations in YBa2Cu3O7-delta from Auger spectroscopy 459
Self-assembly of Ge quantum dots on Silicon:An example of controlled nanomanufacturing 459
A study of the pair distribution function of self-organized Ge quantum dots 458
Breaking elastic field symmetry in the Ge/Si(001) growth with substrate vicinality 457
STM study of acetylene reaction with Si(1 1 1): Observation of a carbon-induced Si(1 1 1) √3 × √3R30° reconstruction 454
Time evolution of graphene growth on SiC as a function of annealing temperature 453
Core level spectroscopy in YBa2Cu3O7-delta: Electronic structure versus oxygen stoichiometry 444
Comparative study of Ag growth on GaAs(001) and (110) surfaces 443
Intermixing and buried interfacial structure in strained Ge/Si(105) facets 443
Heteroepitaxy of Ge on singular and vicinal Si surfaces: Elastic field symmetry and nanostructure growth 440
MgO(100) structural investigations using EELFS and EXFAS techniques 431
Role of patterning in islands nucleation on semiconductor surfaces 430
Morphological instabilities of the InAs/GaAs(001) interface and their effect on the self-assembling of InAs quantum-dot arrays 430
Porphyrin thin films coated quartz crystal microbalances prepared by electropolymerization technique 429
Scanning tunneling microscopy studies of Ge/Si films on Si(111): From layer by layer to quantum dots 429
Characterization of real surfaces of superconductor materials by x-ray photoemission and x-ray Auger spectroscopies 429
Ge growth on vicinal Si(001)surfaces: islands’ shape and pair interaction vs miscut angle 429
Irreversible order-disorder transformation of Ge(0 0 1) probed by scanning tunnelling microscopy 427
Self-ordering of Ge islands on step-bunched Si(111) surfaces 425
Auger study of the electronic correlations in YBa2Cu3O7-delta 425
Photocurrent generation from Ge nanodots in the near UV and visible region 425
Chapter 29: Semiconductors quantum dots: the model case of Ge/Si system 423
Self-assembly of InAs and Si/Ge quantum dots on structured surfaces 422
Ordering of Ge islands on Si(001) substrates patterned by nanoindentation 422
Towards a Controlled Growth of Self-assembled Nanostructures: Shaping, Ordering, and Localization in Ge/Si Heteroepitaxy 422
Topographic and spectroscopic analysis of ethylene adsorption on Si(111)7×7 by STM and STS 420
Copper phthalocyanine on Si(111)-7 × 7 and Si(001)-2 × 1: an XPS/AES and STM study 420
GeSi intermixing in Ge nanostructures on Si(111): An XAFS versus STM study 420
Synthesis of graphene-like transparent conductive films on dielectric substrates using a modified filtered vacuum arc system 420
Core-level changes induced by oxygen in YBa2Cu3O7- 419
Composition of Ge(Si) islands in the growth of Ge on Si(111) 419
The entangled role of strain and diffusion in driving the spontaneous formation of atolls and holes in Ge/Si(111) heteroepitaxy 419
Effects of substrate vicinality on 3D islanding in Ge/Si epitaxy 419
Ripple-to-dome transition: The growth of Ge on Si(1 1 10) vicinal surface 415
Microscopic aspects of the Fe/Bi2Sr2CaCu2O8 reactive interface 413
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 411
Hugh-like island growth of Ge on strained vicinal Si(111) surfaces 408
Orientational phase diagram of the epitaxially strained Si(001): evidence of a singular (105) face 408
Towards the ordering of Ge nanoislands on Si(001) surface with misorientation angle 405
Corroles at the Real Solid–Liquid Interface: In Situ STM Investigation of a Water-Soluble Corrole Layer Deposited onto Au(111) 405
STM studies of Ge-Si thin layers epitaxially grown on Si(111) 404
Formation of a two-dimensional alloy/surface phase: Auger and STM study of Cu(Sn)(111) 402
Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth 401
Morphological and electronic characterization of functionalized graphene nanoribbons obtained by the unzipping of single-wall carbon nanotubes: a scanning tunneling microscopy study 395
Iron disilicide growth on Si(111): a scanning tunneling microscopy investigation 394
DISPOSITIVO PER LA PULIZIA DI PUNTE DI UN MICROSCOPIO A SCANSIONE TUNNEL (STM), MICROSCOPIO A SCANSIONE TUNNEL E RELATIVO PROCEDIMENTO DI PULIZIA 390
Early stage of Ge growth on Si(001) vicinal surfaces with an 8 degrees miscut along [110] 387
Driving Ge Island Ordering on Nanostructured Si surfaces 385
Erratum: Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS (Thin Solid Films (2000) 369 (29-32) PII: S0040609000008294) 384
Morphology of self-assembled quantum dots of InAs on GaAs(001) and Ge 0n Si(111) 384
Step-step interaction on vicinal Si(001) surfaces studied by scanning tunneling microscopy 383
Folding and stacking defects of graphene flakes probed by electron nanobeam 382
Functionalized graphene nanoribbons as nano-carrier for several bio-catalysts: a new selective poultice and consolidation treatment based on the controlled release of cleaning agent of deteriorated sultural heritage surfaces 380
Growth of Ge-Si(111) epitaxial layers: intermixing, strain relaxation and island formation 372
Guide d'onda: fabbricazione e caratterizzazione 372
Early oxidation stages of the strained Ge/Si(105) surface: A reflectance anisotropy spectroscopy study 372
Growth mode of 2-mercaptobenzoxazole on Cu(100) studied by scanning tunneling microscopy 369
Growth and characterization of Ge nanostructures on Si(111) 366
Oxidized few layers of graphene for the assembling of nano-micelles for the celaning of the black crust from peperino substrata 354
Early stage of CVD graphene synthesis on Ge(001) substrate 354
EELFS INVESTIGATION OF YBA2CU3O7-DELTA THIN-FILMS AND SINTERED SAMPLES 350
Diffusion and kinetics in epitaxial graphene growth on SiC 350
Electronic structure and charge fluctuations in YBa2Cu3O7 from EELS, XPS and Auger spectroscopies 346
Metal-interface formation on cleaved and etched single-crystal surfaces of Bi2Sr2CaCu2O8 345
Energy loss study of the electronic structure of YBa2Cu3O7-delta high Tc superconductor 334
Le matrici tridiagonali in matematica e la loro applicazione in fisica 332
Composition of Ge(Si) islands in the growth of Ge on Si(111) by x-ray spectromicroscopy 314
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting 312
Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS 310
Formation of extended thermal etch pits on annealed Ge wafers 307
Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing 301
Electronic structure of the Ge/Si(1 0 5) hetero-interface: An ARPES and DFT study 300
Two-dimensional Voronoi fractal as a sequential fragmentation: The size distribution of fragments 266
CVD growth of graphene on Ge(100) 245
Van der Waals Heteroepitaxy of Germanene Islands on Graphite 241
STM/AFM study of Ge quantum dots grown on Si(111) 240
Modified strain and elastic energy behavior of Ge islands formed on high-miscut Si(0 0 1) substrates 219
Perimeter fractal dimension analysis of corrole islands on Au(111) at the solid-water interface 201
Driving with temperature the synthesis of graphene on Ge(110) 161
Steps and Ge epitaxy on vicinal Si (111) surfaces: an STM study 161
Totale 40.603
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Categoria #
all - tutte 93.082
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 93.082
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022925 0 0 47 52 51 68 58 53 98 74 73 351
2022/20231.454 132 100 22 215 163 317 120 89 121 7 128 40
2023/2024572 70 23 32 17 47 172 47 35 8 21 11 89
2024/20252.945 88 482 261 154 55 178 234 154 199 189 542 409
2025/20263.869 288 255 419 293 325 153 434 524 433 325 234 186
2026/2027600 187 184 229 0 0 0 0 0 0 0 0 0
Totale 42.123