IRIS
SGARLATA, ANNA
 Distribuzione geografica
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Continente #
NA - Nord America 31.691
EU - Europa 2.566
AS - Asia 948
SA - Sud America 56
Continente sconosciuto - Info sul continente non disponibili 19
OC - Oceania 5
AF - Africa 2
Totale 35.287
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Nazione #
US - Stati Uniti d'America 31.624
IT - Italia 598
DE - Germania 526
UA - Ucraina 460
SG - Singapore 458
CN - Cina 308
IE - Irlanda 287
GB - Regno Unito 162
FR - Francia 149
SE - Svezia 104
RU - Federazione Russa 103
FI - Finlandia 100
KR - Corea 87
MX - Messico 36
JP - Giappone 29
CA - Canada 27
BE - Belgio 22
UZ - Uzbekistan 20
EU - Europa 18
CO - Colombia 17
EC - Ecuador 15
HK - Hong Kong 11
IN - India 11
CZ - Repubblica Ceca 9
BR - Brasile 8
PE - Perù 8
PL - Polonia 8
RO - Romania 8
GR - Grecia 7
ES - Italia 5
VN - Vietnam 5
AU - Australia 4
IL - Israele 4
NL - Olanda 4
AR - Argentina 3
KG - Kirghizistan 3
PT - Portogallo 3
TH - Thailandia 3
AT - Austria 2
CL - Cile 2
DK - Danimarca 2
HN - Honduras 2
IR - Iran 2
LT - Lituania 2
LU - Lussemburgo 2
MY - Malesia 2
PK - Pakistan 2
PY - Paraguay 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AE - Emirati Arabi Uniti 1
BG - Bulgaria 1
EG - Egitto 1
HU - Ungheria 1
IQ - Iraq 1
MD - Moldavia 1
NI - Nicaragua 1
NZ - Nuova Zelanda 1
SC - Seychelles 1
SV - El Salvador 1
TW - Taiwan 1
UY - Uruguay 1
Totale 35.287
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Città #
Woodbridge 9.372
Wilmington 8.612
Houston 8.281
Ann Arbor 866
Fairfield 723
Chandler 483
Jacksonville 402
Singapore 402
Ashburn 369
Seattle 300
Dublin 287
Medford 223
Cambridge 216
Dearborn 159
Beijing 148
New York 143
Santa Clara 117
Lawrence 104
Rome 102
Mülheim 68
San Diego 58
Menlo Park 45
Boardman 43
Redwood City 41
Moscow 40
San Mateo 33
Milan 32
Brussels 22
Norwalk 21
Nürnberg 20
Zhengzhou 20
Hefei 19
Saint Petersburg 18
Verona 18
London 17
Mountain View 16
Nanjing 16
University Park 16
Guangzhou 15
Munich 14
Kunming 13
Toronto 13
Palo Alto 12
Padova 11
Helsinki 10
Los Angeles 10
Falls Church 9
Brno 8
Lappeenranta 8
Shenyang 8
Kilburn 7
Kraków 7
Nanchang 7
Bogotá 6
Jinan 6
Shanghai 6
Tappahannock 6
Washington 6
Auburn Hills 5
Fuzhou 5
Hanoi 5
Leawood 5
Mexico City 5
Napoli 5
Nuremberg 5
Quito 5
Saint-jérôme 5
Tuen Mun 5
Corsico 4
Feira de Santana 4
Florence 4
Hounslow 4
Indiana 4
Loja 4
Montreal 4
Niscemi 4
Riobamba 4
Seoul 4
Torino 4
Trujillo 4
Bangkok 3
Benevento 3
Bolzano Vicentino 3
Brisbane 3
Cagliari 3
Carmiano 3
Chengdu 3
Chiswick 3
Detroit 3
Genoa 3
Hebei 3
Lima 3
Lucca 3
Montréal 3
Pune 3
San Francisco 3
São Paulo 3
Tepic 3
Tokyo 3
Trento 3
Totale 32.212
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Nome #
Il principio di Huygens Fresnel e la diffrazione 679
Real-time scanning tunneling microscopy observation of the evolution of Ge quantum dots on nanopatterned Si(001) surfaces 444
STM study of Si(111)7x7 reconstructed surface carbonization induced by acetylene 442
Shaping Ge islands on Si(001) surfaces with misorientation angle 433
Evolution of strained Ge islands grown on Si(111): a scanning probe microscopy study 430
Structural study of the InAs quantum-dot nucleation on GaAs(001) 428
Kelvin probe and scanning tunneling microscope characterization of Langmuir-Blodgett sapphyrin films 428
X-ray-photoemission-spectroscopy study of the surface deterioration of Bi2Sr2CaCu2O8 and Bi1.7Pb0.3Sr2CaCu2O8 single crystals at 26 K 423
Carbon nanotube synthesis from germanium nanoparticles on patterned substrates 422
Size-dependent reversal of the elastic interaction energy between misfit nanostructures 422
COPPER PHTHALOCYANINE ON SI(111)-7X7 AND SI(001)-2X1 - AN XPS/AES AND STM STUDY 421
Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy 421
A Highly Emissive Water-Soluble Phosphorus Corrole 421
Carbon induced restructuring of the Si(111) surface 420
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 419
Growth of ultrahigh-density quantum-confined germanium dots on SiO 2 thin films 415
Beneficial defects: Exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires 413
Self-assembly of Ge quantum dots on Silicon:An example of controlled nanomanufacturing 408
Electronic correlations in YBa2Cu3O7-delta from Auger spectroscopy 407
Intermixing and buried interfacial structure in strained Ge/Si(105) facets 404
Idrogeno ed elio : atomi di storia 404
A study of the pair distribution function of self-organized Ge quantum dots 402
MgO(100) structural investigations using EELFS and EXFAS techniques 400
Heteroepitaxy of Ge on singular and vicinal Si surfaces: Elastic field symmetry and nanostructure growth 400
STM study of acetylene reaction with Si(1 1 1): Observation of a carbon-induced Si(1 1 1) √3 × √3R30° reconstruction 397
Time evolution of graphene growth on SiC as a function of annealing temperature 397
Breaking elastic field symmetry in the Ge/Si(001) growth with substrate vicinality 396
Irreversible order-disorder transformation of Ge(0 0 1) probed by scanning tunnelling microscopy 396
Porphyrin thin films coated quartz crystal microbalances prepared by electropolymerization technique 394
The entangled role of strain and diffusion in driving the spontaneous formation of atolls and holes in Ge/Si(111) heteroepitaxy 393
Morphological instabilities of the InAs/GaAs(001) interface and their effect on the self-assembling of InAs quantum-dot arrays 390
Effects of substrate vicinality on 3D islanding in Ge/Si epitaxy 389
Topographic and spectroscopic analysis of ethylene adsorption on Si(111)7×7 by STM and STS 388
Self-ordering of Ge islands on step-bunched Si(111) surfaces 388
Role of patterning in islands nucleation on semiconductor surfaces 386
Comparative study of Ag growth on GaAs(001) and (110) surfaces 385
Core level spectroscopy in YBa2Cu3O7-delta: Electronic structure versus oxygen stoichiometry 384
Ordering of Ge islands on Si(001) substrates patterned by nanoindentation 383
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 383
Ge growth on vicinal Si(001)surfaces: islands’ shape and pair interaction vs miscut angle 382
Ripple-to-dome transition: The growth of Ge on Si(1 1 10) vicinal surface 382
GeSi intermixing in Ge nanostructures on Si(111): An XAFS versus STM study 381
Scanning tunneling microscopy studies of Ge/Si films on Si(111): From layer by layer to quantum dots 380
Characterization of real surfaces of superconductor materials by x-ray photoemission and x-ray Auger spectroscopies 380
Valence charge fluctuations in YBa2Cu3O7-delta from core level spectroscopies 379
Photocurrent generation from Ge nanodots in the near UV and visible region 379
Self-assembly of InAs and Si/Ge quantum dots on structured surfaces 376
Towards a Controlled Growth of Self-assembled Nanostructures: Shaping, Ordering, and Localization in Ge/Si Heteroepitaxy 375
Microscopic aspects of the Fe/Bi2Sr2CaCu2O8 reactive interface 373
Core-level changes induced by oxygen in YBa2Cu3O7- 372
Formation of a two-dimensional alloy/surface phase: Auger and STM study of Cu(Sn)(111) 372
Copper phthalocyanine on Si(111)-7 × 7 and Si(001)-2 × 1: an XPS/AES and STM study 371
Orientational phase diagram of the epitaxially strained Si(001): evidence of a singular (105) face 370
Interface formation between d metals and the Bi2Sr2CaCu2O8 surface 369
Hugh-like island growth of Ge on strained vicinal Si(111) surfaces 367
Erratum: Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS (Thin Solid Films (2000) 369 (29-32) PII: S0040609000008294) 366
Auger study of the electronic correlations in YBa2Cu3O7-delta 365
Towards the ordering of Ge nanoislands on Si(001) surface with misorientation angle 364
Chapter 29: Semiconductors quantum dots: the model case of Ge/Si system 364
Step-step interaction on vicinal Si(001) surfaces studied by scanning tunneling microscopy 362
Composition of Ge(Si) islands in the growth of Ge on Si(111) 362
Morphological and electronic characterization of functionalized graphene nanoribbons obtained by the unzipping of single-wall carbon nanotubes: a scanning tunneling microscopy study 361
Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth 360
Synthesis of graphene-like transparent conductive films on dielectric substrates using a modified filtered vacuum arc system 357
Iron disilicide growth on Si(111): a scanning tunneling microscopy investigation 351
STM studies of Ge-Si thin layers epitaxially grown on Si(111) 351
Growth mode of 2-mercaptobenzoxazole on Cu(100) studied by scanning tunneling microscopy 342
Folding and stacking defects of graphene flakes probed by electron nanobeam 341
Early stage of Ge growth on Si(001) vicinal surfaces with an 8 degrees miscut along [110] 340
Growth and characterization of Ge nanostructures on Si(111) 336
DISPOSITIVO PER LA PULIZIA DI PUNTE DI UN MICROSCOPIO A SCANSIONE TUNNEL (STM), MICROSCOPIO A SCANSIONE TUNNEL E RELATIVO PROCEDIMENTO DI PULIZIA 332
Early oxidation stages of the strained Ge/Si(105) surface: A reflectance anisotropy spectroscopy study 331
Functionalized graphene nanoribbons as nano-carrier for several bio-catalysts: a new selective poultice and consolidation treatment based on the controlled release of cleaning agent of deteriorated sultural heritage surfaces 330
Growth of Ge-Si(111) epitaxial layers: intermixing, strain relaxation and island formation 328
Morphology of self-assembled quantum dots of InAs on GaAs(001) and Ge 0n Si(111) 324
Driving Ge Island Ordering on Nanostructured Si surfaces 324
Electronic structure and charge fluctuations in YBa2Cu3O7 from EELS, XPS and Auger spectroscopies 320
Guide d'onda: fabbricazione e caratterizzazione 320
Corroles at the Real Solid–Liquid Interface: In Situ STM Investigation of a Water-Soluble Corrole Layer Deposited onto Au(111) 315
EELFS INVESTIGATION OF YBA2CU3O7-DELTA THIN-FILMS AND SINTERED SAMPLES 311
Metal-interface formation on cleaved and etched single-crystal surfaces of Bi2Sr2CaCu2O8 310
Diffusion and kinetics in epitaxial graphene growth on SiC 306
Oxidized few layers of graphene for the assembling of nano-micelles for the celaning of the black crust from peperino substrata 300
Energy loss study of the electronic structure of YBa2Cu3O7-delta high Tc superconductor 298
Early stage of CVD graphene synthesis on Ge(001) substrate 291
Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS 267
Formation of extended thermal etch pits on annealed Ge wafers 263
Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing 263
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting 250
Electronic structure of the Ge/Si(1 0 5) hetero-interface: An ARPES and DFT study 247
Composition of Ge(Si) islands in the growth of Ge on Si(111) by x-ray spectromicroscopy 247
Le matrici tridiagonali in matematica e la loro applicazione in fisica 240
Van der Waals Heteroepitaxy of Germanene Islands on Graphite 206
STM/AFM study of Ge quantum dots grown on Si(111) 201
Modified strain and elastic energy behavior of Ge islands formed on high-miscut Si(0 0 1) substrates 183
CVD growth of graphene on Ge(100) 182
Perimeter fractal dimension analysis of corrole islands on Au(111) at the solid-water interface 151
Steps and Ge epitaxy on vicinal Si (111) surfaces: an STM study 118
Driving with temperature the synthesis of graphene on Ge(110) 110
Growth of corrole films from solution: a nanometer-scale study at the real solid-liquid interface 63
Totale 35.216
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Categoria #
all - tutte 64.772
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 64.772
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20207.328 0 0 0 923 785 1.022 824 861 828 769 601 715
2020/20215.692 634 680 614 739 572 640 692 509 215 91 222 84
2021/20221.119 46 148 47 52 51 68 58 53 98 74 73 351
2022/20231.454 132 100 22 215 163 317 120 89 121 7 128 40
2023/2024572 70 23 32 17 47 172 47 35 8 21 11 89
2024/2025837 88 482 261 6 0 0 0 0 0 0 0 0
Totale 35.546