IRIS
SGARLATA, ANNA
 Distribuzione geografica
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Continente #
NA - Nord America 34.953
AS - Asia 3.829
EU - Europa 3.514
SA - Sud America 531
Continente sconosciuto - Info sul continente non disponibili 324
AF - Africa 48
OC - Oceania 15
Totale 43.214
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Nazione #
US - Stati Uniti d'America 34.731
SG - Singapore 2.037
IT - Italia 844
CN - Cina 677
DE - Germania 589
UA - Ucraina 467
RU - Federazione Russa 449
BR - Brasile 392
HK - Hong Kong 323
IE - Irlanda 289
VN - Vietnam 278
GB - Regno Unito 235
FR - Francia 215
FI - Finlandia 141
SE - Svezia 114
JP - Giappone 101
CA - Canada 97
KR - Corea 93
BD - Bangladesh 92
MX - Messico 63
IN - India 43
CO - Colombia 34
EC - Ecuador 34
UZ - Uzbekistan 29
BE - Belgio 27
NL - Olanda 26
AR - Argentina 25
ID - Indonesia 25
ES - Italia 23
IQ - Iraq 21
PL - Polonia 21
EU - Europa 18
TR - Turchia 16
PE - Perù 14
LT - Lituania 13
AU - Australia 12
ZA - Sudafrica 12
AT - Austria 11
CZ - Repubblica Ceca 11
IL - Israele 11
MY - Malesia 11
PH - Filippine 11
CR - Costa Rica 10
JM - Giamaica 10
PK - Pakistan 9
RO - Romania 9
VE - Venezuela 9
CL - Cile 8
GR - Grecia 8
TT - Trinidad e Tobago 8
NI - Nicaragua 7
PY - Paraguay 7
SC - Seychelles 7
AE - Emirati Arabi Uniti 6
JO - Giordania 6
MA - Marocco 6
TH - Thailandia 6
UY - Uruguay 6
GT - Guatemala 5
HN - Honduras 5
KE - Kenya 5
NP - Nepal 5
OM - Oman 5
PT - Portogallo 5
SA - Arabia Saudita 5
CW - ???statistics.table.value.countryCode.CW??? 4
DO - Repubblica Dominicana 4
EG - Egitto 4
KG - Kirghizistan 4
TN - Tunisia 4
DZ - Algeria 3
IR - Iran 3
LU - Lussemburgo 3
MD - Moldavia 3
SV - El Salvador 3
BG - Bulgaria 2
BO - Bolivia 2
BS - Bahamas 2
CI - Costa d'Avorio 2
DK - Danimarca 2
ET - Etiopia 2
KZ - Kazakistan 2
LB - Libano 2
NZ - Nuova Zelanda 2
PR - Porto Rico 2
SI - Slovenia 2
SN - Senegal 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AG - Antigua e Barbuda 1
AM - Armenia 1
AZ - Azerbaigian 1
BM - Bermuda 1
BY - Bielorussia 1
EE - Estonia 1
GE - Georgia 1
GP - Guadalupe 1
HU - Ungheria 1
KN - Saint Kitts e Nevis 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
Totale 42.904
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Città #
Woodbridge 9.373
Wilmington 8.615
Houston 8.289
Ashburn 889
Ann Arbor 866
Singapore 790
Fairfield 723
San Jose 543
Chandler 483
Jacksonville 405
Hong Kong 306
Seattle 304
Dublin 290
Beijing 276
Medford 224
New York 220
Council Bluffs 217
Cambridge 216
Rome 163
Santa Clara 160
Dearborn 159
The Dalles 138
Los Angeles 113
Lawrence 104
Ho Chi Minh City 88
Buffalo 72
Tokyo 72
Hanoi 69
Moscow 68
Mülheim 68
San Diego 60
Milan 58
Munich 47
Menlo Park 45
Boardman 44
São Paulo 42
Redwood City 41
Lauterbourg 38
Dallas 35
Helsinki 33
San Mateo 33
Chicago 32
London 30
Toronto 28
Brussels 26
Washington 26
Denver 25
Phoenix 23
Guangzhou 22
Norwalk 22
North Bergen 21
Zhengzhou 21
Montreal 20
Nürnberg 20
Verona 20
Atlanta 19
Hefei 19
Nanjing 18
Orem 18
Saint Petersburg 18
Mountain View 16
University Park 16
Lappeenranta 14
Nuremberg 14
Rio de Janeiro 14
Kunming 13
Naples 13
Columbus 12
Haiphong 12
Palo Alto 12
Quito 12
San Francisco 12
Shanghai 12
Turku 12
Boston 11
Brooklyn 11
Frankfurt am Main 11
Manchester 11
Mexico City 11
Padova 11
Poplar 11
Baghdad 10
Bogotá 10
Brasília 10
Da Nang 10
Guayaquil 10
Redondo Beach 10
Trieste 10
Warsaw 10
Falls Church 9
Lima 9
New Orleans 9
Vancouver 9
Brno 8
Charlotte 8
Florence 8
Johannesburg 8
Kingston 8
Salvador 8
San José 8
Totale 35.640
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Nome #
Il principio di Huygens Fresnel e la diffrazione 821
Size-dependent reversal of the elastic interaction energy between misfit nanostructures 633
Valence charge fluctuations in YBa2Cu3O7-delta from core level spectroscopies 583
Interface formation between d metals and the Bi2Sr2CaCu2O8 surface 566
Idrogeno ed elio : atomi di storia 513
A Highly Emissive Water-Soluble Phosphorus Corrole 511
Carbon induced restructuring of the Si(111) surface 507
Carbon nanotube synthesis from germanium nanoparticles on patterned substrates 503
STM study of Si(111)7x7 reconstructed surface carbonization induced by acetylene 497
COPPER PHTHALOCYANINE ON SI(111)-7X7 AND SI(001)-2X1 - AN XPS/AES AND STM STUDY 494
Structural study of the InAs quantum-dot nucleation on GaAs(001) 494
Kelvin probe and scanning tunneling microscope characterization of Langmuir-Blodgett sapphyrin films 490
Beneficial defects: Exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires 490
Shaping Ge islands on Si(001) surfaces with misorientation angle 487
Real-time scanning tunneling microscopy observation of the evolution of Ge quantum dots on nanopatterned Si(001) surfaces 479
X-ray-photoemission-spectroscopy study of the surface deterioration of Bi2Sr2CaCu2O8 and Bi1.7Pb0.3Sr2CaCu2O8 single crystals at 26 K 478
STM study of acetylene reaction with Si(1 1 1): Observation of a carbon-induced Si(1 1 1) √3 × √3R30° reconstruction 473
Evolution of strained Ge islands grown on Si(111): a scanning probe microscopy study 472
Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy 472
Growth of ultrahigh-density quantum-confined germanium dots on SiO 2 thin films 471
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 468
A study of the pair distribution function of self-organized Ge quantum dots 468
Breaking elastic field symmetry in the Ge/Si(001) growth with substrate vicinality 468
Self-assembly of Ge quantum dots on Silicon:An example of controlled nanomanufacturing 468
Time evolution of graphene growth on SiC as a function of annealing temperature 465
Electronic correlations in YBa2Cu3O7-delta from Auger spectroscopy 464
Core level spectroscopy in YBa2Cu3O7-delta: Electronic structure versus oxygen stoichiometry 458
Comparative study of Ag growth on GaAs(001) and (110) surfaces 452
Intermixing and buried interfacial structure in strained Ge/Si(105) facets 449
Heteroepitaxy of Ge on singular and vicinal Si surfaces: Elastic field symmetry and nanostructure growth 449
MgO(100) structural investigations using EELFS and EXFAS techniques 445
Scanning tunneling microscopy studies of Ge/Si films on Si(111): From layer by layer to quantum dots 441
Characterization of real surfaces of superconductor materials by x-ray photoemission and x-ray Auger spectroscopies 441
Morphological instabilities of the InAs/GaAs(001) interface and their effect on the self-assembling of InAs quantum-dot arrays 440
Copper phthalocyanine on Si(111)-7 × 7 and Si(001)-2 × 1: an XPS/AES and STM study 437
Towards the ordering of Ge nanoislands on Si(001) surface with misorientation angle 436
Chapter 29: Semiconductors quantum dots: the model case of Ge/Si system 436
Porphyrin thin films coated quartz crystal microbalances prepared by electropolymerization technique 435
Role of patterning in islands nucleation on semiconductor surfaces 435
Self-assembly of InAs and Si/Ge quantum dots on structured surfaces 435
Ge growth on vicinal Si(001)surfaces: islands’ shape and pair interaction vs miscut angle 435
Photocurrent generation from Ge nanodots in the near UV and visible region 433
Irreversible order-disorder transformation of Ge(0 0 1) probed by scanning tunnelling microscopy 432
Effects of substrate vicinality on 3D islanding in Ge/Si epitaxy 432
Synthesis of graphene-like transparent conductive films on dielectric substrates using a modified filtered vacuum arc system 431
GeSi intermixing in Ge nanostructures on Si(111): An XAFS versus STM study 430
Auger study of the electronic correlations in YBa2Cu3O7-delta 430
Composition of Ge(Si) islands in the growth of Ge on Si(111) 429
Self-ordering of Ge islands on step-bunched Si(111) surfaces 429
Towards a Controlled Growth of Self-assembled Nanostructures: Shaping, Ordering, and Localization in Ge/Si Heteroepitaxy 429
The entangled role of strain and diffusion in driving the spontaneous formation of atolls and holes in Ge/Si(111) heteroepitaxy 429
Core-level changes induced by oxygen in YBa2Cu3O7- 427
Topographic and spectroscopic analysis of ethylene adsorption on Si(111)7×7 by STM and STS 426
Ordering of Ge islands on Si(001) substrates patterned by nanoindentation 426
Corroles at the Real Solid–Liquid Interface: In Situ STM Investigation of a Water-Soluble Corrole Layer Deposited onto Au(111) 421
Ripple-to-dome transition: The growth of Ge on Si(1 1 10) vicinal surface 419
Microscopic aspects of the Fe/Bi2Sr2CaCu2O8 reactive interface 417
Formation of a two-dimensional alloy/surface phase: Auger and STM study of Cu(Sn)(111) 417
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 417
Hugh-like island growth of Ge on strained vicinal Si(111) surfaces 417
Orientational phase diagram of the epitaxially strained Si(001): evidence of a singular (105) face 412
STM studies of Ge-Si thin layers epitaxially grown on Si(111) 411
Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth 410
DISPOSITIVO PER LA PULIZIA DI PUNTE DI UN MICROSCOPIO A SCANSIONE TUNNEL (STM), MICROSCOPIO A SCANSIONE TUNNEL E RELATIVO PROCEDIMENTO DI PULIZIA 405
Iron disilicide growth on Si(111): a scanning tunneling microscopy investigation 401
Morphological and electronic characterization of functionalized graphene nanoribbons obtained by the unzipping of single-wall carbon nanotubes: a scanning tunneling microscopy study 401
Early stage of Ge growth on Si(001) vicinal surfaces with an 8 degrees miscut along [110] 395
Driving Ge Island Ordering on Nanostructured Si surfaces 395
Folding and stacking defects of graphene flakes probed by electron nanobeam 393
Erratum: Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS (Thin Solid Films (2000) 369 (29-32) PII: S0040609000008294) 390
Morphology of self-assembled quantum dots of InAs on GaAs(001) and Ge 0n Si(111) 390
Functionalized graphene nanoribbons as nano-carrier for several bio-catalysts: a new selective poultice and consolidation treatment based on the controlled release of cleaning agent of deteriorated sultural heritage surfaces 389
Step-step interaction on vicinal Si(001) surfaces studied by scanning tunneling microscopy 387
Growth of Ge-Si(111) epitaxial layers: intermixing, strain relaxation and island formation 387
Guide d'onda: fabbricazione e caratterizzazione 379
Early oxidation stages of the strained Ge/Si(105) surface: A reflectance anisotropy spectroscopy study 379
Growth mode of 2-mercaptobenzoxazole on Cu(100) studied by scanning tunneling microscopy 377
Growth and characterization of Ge nanostructures on Si(111) 372
Oxidized few layers of graphene for the assembling of nano-micelles for the celaning of the black crust from peperino substrata 366
Early stage of CVD graphene synthesis on Ge(001) substrate 366
EELFS INVESTIGATION OF YBA2CU3O7-DELTA THIN-FILMS AND SINTERED SAMPLES 357
Diffusion and kinetics in epitaxial graphene growth on SiC 356
Electronic structure and charge fluctuations in YBa2Cu3O7 from EELS, XPS and Auger spectroscopies 350
Metal-interface formation on cleaved and etched single-crystal surfaces of Bi2Sr2CaCu2O8 349
Le matrici tridiagonali in matematica e la loro applicazione in fisica 348
Energy loss study of the electronic structure of YBa2Cu3O7-delta high Tc superconductor 340
Composition of Ge(Si) islands in the growth of Ge on Si(111) by x-ray spectromicroscopy 324
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting 324
Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS 318
Formation of extended thermal etch pits on annealed Ge wafers 316
Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing 310
Electronic structure of the Ge/Si(1 0 5) hetero-interface: An ARPES and DFT study 308
Two-dimensional Voronoi fractal as a sequential fragmentation: The size distribution of fragments 284
CVD growth of graphene on Ge(100) 250
Van der Waals Heteroepitaxy of Germanene Islands on Graphite 248
STM/AFM study of Ge quantum dots grown on Si(111) 246
Modified strain and elastic energy behavior of Ge islands formed on high-miscut Si(0 0 1) substrates 224
Perimeter fractal dimension analysis of corrole islands on Au(111) at the solid-water interface 210
Driving with temperature the synthesis of graphene on Ge(110) 169
Steps and Ge epitaxy on vicinal Si (111) surfaces: an STM study 165
Totale 41.551
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Categoria #
all - tutte 96.388
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 96.388
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022826 0 0 0 0 51 68 58 53 98 74 73 351
2022/20231.454 132 100 22 215 163 317 120 89 121 7 128 40
2023/2024572 70 23 32 17 47 172 47 35 8 21 11 89
2024/20252.945 88 482 261 154 55 178 234 154 199 189 542 409
2025/20263.869 288 255 419 293 325 153 434 524 433 325 234 186
2026/20271.691 187 184 788 513 19 0 0 0 0 0 0 0
Totale 43.214