IRIS
SGARLATA, ANNA
 Distribuzione geografica
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Continente #
NA - Nord America 33.199
AS - Asia 3.701
EU - Europa 3.363
SA - Sud America 500
AF - Africa 39
Continente sconosciuto - Info sul continente non disponibili 20
OC - Oceania 14
Totale 40.836
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Nazione #
US - Stati Uniti d'America 33.051
SG - Singapore 2.029
IT - Italia 747
CN - Cina 658
DE - Germania 589
UA - Ucraina 466
RU - Federazione Russa 443
BR - Brasile 375
HK - Hong Kong 320
IE - Irlanda 289
VN - Vietnam 275
GB - Regno Unito 218
FR - Francia 208
FI - Finlandia 140
SE - Svezia 109
JP - Giappone 100
KR - Corea 93
CA - Canada 69
MX - Messico 59
IN - India 43
EC - Ecuador 29
UZ - Uzbekistan 29
CO - Colombia 28
BE - Belgio 25
AR - Argentina 24
NL - Olanda 22
BD - Bangladesh 21
ES - Italia 21
ID - Indonesia 21
IQ - Iraq 21
PL - Polonia 20
EU - Europa 18
PE - Perù 14
TR - Turchia 13
AT - Austria 11
AU - Australia 11
CZ - Repubblica Ceca 11
ZA - Sudafrica 11
LT - Lituania 9
PH - Filippine 9
RO - Romania 9
CL - Cile 8
PK - Pakistan 8
GR - Grecia 7
MY - Malesia 7
PY - Paraguay 7
VE - Venezuela 7
AE - Emirati Arabi Uniti 6
JO - Giordania 6
MA - Marocco 6
TH - Thailandia 6
UY - Uruguay 6
IL - Israele 5
OM - Oman 5
DO - Repubblica Dominicana 4
EG - Egitto 4
KE - Kenya 4
KG - Kirghizistan 4
NP - Nepal 4
PT - Portogallo 4
TN - Tunisia 4
DZ - Algeria 3
HN - Honduras 3
IR - Iran 3
JM - Giamaica 3
LU - Lussemburgo 3
MD - Moldavia 3
SA - Arabia Saudita 3
SV - El Salvador 3
TT - Trinidad e Tobago 3
BO - Bolivia 2
CI - Costa d'Avorio 2
DK - Danimarca 2
ET - Etiopia 2
KZ - Kazakistan 2
LB - Libano 2
NZ - Nuova Zelanda 2
SI - Slovenia 2
SN - Senegal 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AM - Armenia 1
AZ - Azerbaigian 1
BG - Bulgaria 1
BY - Bielorussia 1
CR - Costa Rica 1
GE - Georgia 1
GT - Guatemala 1
HU - Ungheria 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
MK - Macedonia 1
NI - Nicaragua 1
NO - Norvegia 1
PR - Porto Rico 1
PS - Palestinian Territory 1
PW - Palau 1
SC - Seychelles 1
TW - Taiwan 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 40.836
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Città #
Woodbridge 9.373
Wilmington 8.613
Houston 8.287
Ann Arbor 866
Singapore 788
Fairfield 723
Ashburn 515
Chandler 483
Jacksonville 402
San Jose 345
Hong Kong 303
Seattle 303
Dublin 289
Beijing 274
Medford 223
Cambridge 216
New York 193
Dearborn 159
Rome 139
The Dalles 137
Santa Clara 131
Lawrence 104
Council Bluffs 99
Los Angeles 96
Ho Chi Minh City 86
Tokyo 71
Hanoi 69
Moscow 68
Mülheim 68
Buffalo 65
San Diego 59
Milan 51
Munich 47
Menlo Park 45
Boardman 44
Redwood City 41
Lauterbourg 38
São Paulo 35
San Mateo 33
Helsinki 32
Dallas 30
London 28
Brussels 25
Chicago 24
Guangzhou 22
Toronto 22
Norwalk 21
Zhengzhou 21
Nürnberg 20
Verona 20
Hefei 19
Nanjing 18
Saint Petersburg 18
Montreal 17
Mountain View 16
Orem 16
Phoenix 16
University Park 16
Atlanta 15
Lappeenranta 14
Nuremberg 14
Rio de Janeiro 14
Kunming 13
Haiphong 12
Palo Alto 12
Shanghai 12
Turku 12
Frankfurt am Main 11
Mexico City 11
Padova 11
Poplar 11
Baghdad 10
Boston 10
North Bergen 10
Redondo Beach 10
Warsaw 10
Washington 10
Da Nang 9
Falls Church 9
Quito 9
Vancouver 9
Bogotá 8
Brno 8
Guayaquil 8
Johannesburg 8
Lima 8
Manchester 8
Salvador 8
San Francisco 8
Shenyang 8
Tashkent 8
Vienna 8
Chennai 7
Florence 7
Fuzhou 7
Kilburn 7
Kraków 7
Nanchang 7
Amman 6
Biên Hòa 6
Totale 34.682
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Nome #
Il principio di Huygens Fresnel e la diffrazione 760
Size-dependent reversal of the elastic interaction energy between misfit nanostructures 613
Valence charge fluctuations in YBa2Cu3O7-delta from core level spectroscopies 566
Interface formation between d metals and the Bi2Sr2CaCu2O8 surface 558
Carbon induced restructuring of the Si(111) surface 496
A Highly Emissive Water-Soluble Phosphorus Corrole 487
STM study of Si(111)7x7 reconstructed surface carbonization induced by acetylene 486
Idrogeno ed elio : atomi di storia 485
Kelvin probe and scanning tunneling microscope characterization of Langmuir-Blodgett sapphyrin films 478
Carbon nanotube synthesis from germanium nanoparticles on patterned substrates 478
COPPER PHTHALOCYANINE ON SI(111)-7X7 AND SI(001)-2X1 - AN XPS/AES AND STM STUDY 475
Beneficial defects: Exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires 471
Shaping Ge islands on Si(001) surfaces with misorientation angle 469
Real-time scanning tunneling microscopy observation of the evolution of Ge quantum dots on nanopatterned Si(001) surfaces 468
Structural study of the InAs quantum-dot nucleation on GaAs(001) 464
Growth of ultrahigh-density quantum-confined germanium dots on SiO 2 thin films 455
Evolution of strained Ge islands grown on Si(111): a scanning probe microscopy study 455
A study of the pair distribution function of self-organized Ge quantum dots 455
X-ray-photoemission-spectroscopy study of the surface deterioration of Bi2Sr2CaCu2O8 and Bi1.7Pb0.3Sr2CaCu2O8 single crystals at 26 K 454
Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy 452
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 451
Electronic correlations in YBa2Cu3O7-delta from Auger spectroscopy 451
Breaking elastic field symmetry in the Ge/Si(001) growth with substrate vicinality 449
Self-assembly of Ge quantum dots on Silicon:An example of controlled nanomanufacturing 442
Time evolution of graphene growth on SiC as a function of annealing temperature 442
Core level spectroscopy in YBa2Cu3O7-delta: Electronic structure versus oxygen stoichiometry 437
Intermixing and buried interfacial structure in strained Ge/Si(105) facets 437
Comparative study of Ag growth on GaAs(001) and (110) surfaces 433
Heteroepitaxy of Ge on singular and vicinal Si surfaces: Elastic field symmetry and nanostructure growth 433
STM study of acetylene reaction with Si(1 1 1): Observation of a carbon-induced Si(1 1 1) √3 × √3R30° reconstruction 431
Porphyrin thin films coated quartz crystal microbalances prepared by electropolymerization technique 427
MgO(100) structural investigations using EELFS and EXFAS techniques 426
Role of patterning in islands nucleation on semiconductor surfaces 425
Scanning tunneling microscopy studies of Ge/Si films on Si(111): From layer by layer to quantum dots 424
Morphological instabilities of the InAs/GaAs(001) interface and their effect on the self-assembling of InAs quantum-dot arrays 423
Characterization of real surfaces of superconductor materials by x-ray photoemission and x-ray Auger spectroscopies 423
Irreversible order-disorder transformation of Ge(0 0 1) probed by scanning tunnelling microscopy 422
Ge growth on vicinal Si(001)surfaces: islands’ shape and pair interaction vs miscut angle 421
Self-ordering of Ge islands on step-bunched Si(111) surfaces 418
Auger study of the electronic correlations in YBa2Cu3O7-delta 418
Self-assembly of InAs and Si/Ge quantum dots on structured surfaces 417
Topographic and spectroscopic analysis of ethylene adsorption on Si(111)7×7 by STM and STS 415
Ordering of Ge islands on Si(001) substrates patterned by nanoindentation 415
Photocurrent generation from Ge nanodots in the near UV and visible region 415
Core-level changes induced by oxygen in YBa2Cu3O7- 414
Composition of Ge(Si) islands in the growth of Ge on Si(111) 414
The entangled role of strain and diffusion in driving the spontaneous formation of atolls and holes in Ge/Si(111) heteroepitaxy 414
Chapter 29: Semiconductors quantum dots: the model case of Ge/Si system 414
Copper phthalocyanine on Si(111)-7 × 7 and Si(001)-2 × 1: an XPS/AES and STM study 413
Effects of substrate vicinality on 3D islanding in Ge/Si epitaxy 413
Towards a Controlled Growth of Self-assembled Nanostructures: Shaping, Ordering, and Localization in Ge/Si Heteroepitaxy 411
GeSi intermixing in Ge nanostructures on Si(111): An XAFS versus STM study 407
Microscopic aspects of the Fe/Bi2Sr2CaCu2O8 reactive interface 407
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 407
Ripple-to-dome transition: The growth of Ge on Si(1 1 10) vicinal surface 406
Synthesis of graphene-like transparent conductive films on dielectric substrates using a modified filtered vacuum arc system 404
Orientational phase diagram of the epitaxially strained Si(001): evidence of a singular (105) face 402
Hugh-like island growth of Ge on strained vicinal Si(111) surfaces 400
Towards the ordering of Ge nanoislands on Si(001) surface with misorientation angle 398
Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth 396
Corroles at the Real Solid–Liquid Interface: In Situ STM Investigation of a Water-Soluble Corrole Layer Deposited onto Au(111) 396
STM studies of Ge-Si thin layers epitaxially grown on Si(111) 393
Formation of a two-dimensional alloy/surface phase: Auger and STM study of Cu(Sn)(111) 392
Morphological and electronic characterization of functionalized graphene nanoribbons obtained by the unzipping of single-wall carbon nanotubes: a scanning tunneling microscopy study 389
Iron disilicide growth on Si(111): a scanning tunneling microscopy investigation 388
DISPOSITIVO PER LA PULIZIA DI PUNTE DI UN MICROSCOPIO A SCANSIONE TUNNEL (STM), MICROSCOPIO A SCANSIONE TUNNEL E RELATIVO PROCEDIMENTO DI PULIZIA 384
Step-step interaction on vicinal Si(001) surfaces studied by scanning tunneling microscopy 382
Erratum: Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS (Thin Solid Films (2000) 369 (29-32) PII: S0040609000008294) 382
Early stage of Ge growth on Si(001) vicinal surfaces with an 8 degrees miscut along [110] 379
Morphology of self-assembled quantum dots of InAs on GaAs(001) and Ge 0n Si(111) 376
Driving Ge Island Ordering on Nanostructured Si surfaces 376
Functionalized graphene nanoribbons as nano-carrier for several bio-catalysts: a new selective poultice and consolidation treatment based on the controlled release of cleaning agent of deteriorated sultural heritage surfaces 372
Folding and stacking defects of graphene flakes probed by electron nanobeam 369
Guide d'onda: fabbricazione e caratterizzazione 369
Early oxidation stages of the strained Ge/Si(105) surface: A reflectance anisotropy spectroscopy study 365
Growth and characterization of Ge nanostructures on Si(111) 363
Growth mode of 2-mercaptobenzoxazole on Cu(100) studied by scanning tunneling microscopy 362
Growth of Ge-Si(111) epitaxial layers: intermixing, strain relaxation and island formation 361
Diffusion and kinetics in epitaxial graphene growth on SiC 345
EELFS INVESTIGATION OF YBA2CU3O7-DELTA THIN-FILMS AND SINTERED SAMPLES 344
Oxidized few layers of graphene for the assembling of nano-micelles for the celaning of the black crust from peperino substrata 344
Early stage of CVD graphene synthesis on Ge(001) substrate 342
Electronic structure and charge fluctuations in YBa2Cu3O7 from EELS, XPS and Auger spectroscopies 341
Metal-interface formation on cleaved and etched single-crystal surfaces of Bi2Sr2CaCu2O8 339
Energy loss study of the electronic structure of YBa2Cu3O7-delta high Tc superconductor 329
Le matrici tridiagonali in matematica e la loro applicazione in fisica 316
Composition of Ge(Si) islands in the growth of Ge on Si(111) by x-ray spectromicroscopy 310
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting 306
Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS 305
Formation of extended thermal etch pits on annealed Ge wafers 300
Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing 298
Electronic structure of the Ge/Si(1 0 5) hetero-interface: An ARPES and DFT study 294
Two-dimensional Voronoi fractal as a sequential fragmentation: The size distribution of fragments 249
STM/AFM study of Ge quantum dots grown on Si(111) 236
Van der Waals Heteroepitaxy of Germanene Islands on Graphite 236
CVD growth of graphene on Ge(100) 234
Modified strain and elastic energy behavior of Ge islands formed on high-miscut Si(0 0 1) substrates 215
Perimeter fractal dimension analysis of corrole islands on Au(111) at the solid-water interface 192
Driving with temperature the synthesis of graphene on Ge(110) 156
Steps and Ge epitaxy on vicinal Si (111) surfaces: an STM study 152
Totale 39.821
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Categoria #
all - tutte 87.329
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 87.329
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021306 0 0 0 0 0 0 0 0 0 0 222 84
2021/20221.119 46 148 47 52 51 68 58 53 98 74 73 351
2022/20231.454 132 100 22 215 163 317 120 89 121 7 128 40
2023/2024572 70 23 32 17 47 172 47 35 8 21 11 89
2024/20252.945 88 482 261 154 55 178 234 154 199 189 542 409
2025/20263.482 288 255 419 293 325 153 434 524 433 325 33 0
Totale 41.136