IRIS
SGARLATA, ANNA
 Distribuzione geografica
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Continente #
NA - Nord America 33.480
AS - Asia 3.773
EU - Europa 3.422
SA - Sud America 504
AF - Africa 39
Continente sconosciuto - Info sul continente non disponibili 20
OC - Oceania 15
Totale 41.253
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Nazione #
US - Stati Uniti d'America 33.319
SG - Singapore 2.034
IT - Italia 795
CN - Cina 668
DE - Germania 589
UA - Ucraina 467
RU - Federazione Russa 443
BR - Brasile 377
HK - Hong Kong 320
IE - Irlanda 289
VN - Vietnam 275
GB - Regno Unito 218
FR - Francia 208
FI - Finlandia 141
SE - Svezia 109
JP - Giappone 100
KR - Corea 93
BD - Bangladesh 73
CA - Canada 73
MX - Messico 61
IN - India 43
CO - Colombia 30
EC - Ecuador 29
UZ - Uzbekistan 29
BE - Belgio 25
NL - Olanda 25
AR - Argentina 24
ID - Indonesia 23
ES - Italia 22
IQ - Iraq 21
PL - Polonia 21
EU - Europa 18
PE - Perù 14
TR - Turchia 13
AU - Australia 12
AT - Austria 11
CZ - Repubblica Ceca 11
ZA - Sudafrica 11
LT - Lituania 10
MY - Malesia 10
PH - Filippine 9
RO - Romania 9
CL - Cile 8
GR - Grecia 8
PK - Pakistan 8
PY - Paraguay 7
VE - Venezuela 7
AE - Emirati Arabi Uniti 6
JO - Giordania 6
MA - Marocco 6
TH - Thailandia 6
UY - Uruguay 6
IL - Israele 5
OM - Oman 5
PT - Portogallo 5
DO - Repubblica Dominicana 4
EG - Egitto 4
JM - Giamaica 4
KE - Kenya 4
KG - Kirghizistan 4
NP - Nepal 4
TN - Tunisia 4
CR - Costa Rica 3
DZ - Algeria 3
HN - Honduras 3
IR - Iran 3
LU - Lussemburgo 3
MD - Moldavia 3
SA - Arabia Saudita 3
SV - El Salvador 3
TT - Trinidad e Tobago 3
BG - Bulgaria 2
BO - Bolivia 2
CI - Costa d'Avorio 2
DK - Danimarca 2
ET - Etiopia 2
KZ - Kazakistan 2
LB - Libano 2
NI - Nicaragua 2
NZ - Nuova Zelanda 2
SI - Slovenia 2
SN - Senegal 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AM - Armenia 1
AZ - Azerbaigian 1
BM - Bermuda 1
BY - Bielorussia 1
GE - Georgia 1
GT - Guatemala 1
HU - Ungheria 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
MK - Macedonia 1
NO - Norvegia 1
PA - Panama 1
PR - Porto Rico 1
PS - Palestinian Territory 1
PW - Palau 1
SC - Seychelles 1
Totale 41.250
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Città #
Woodbridge 9.373
Wilmington 8.613
Houston 8.289
Ann Arbor 866
Singapore 788
Fairfield 723
Ashburn 537
Chandler 483
San Jose 456
Jacksonville 403
Hong Kong 303
Seattle 303
Dublin 290
Beijing 274
Medford 223
Cambridge 216
New York 207
Dearborn 159
Rome 150
Santa Clara 144
The Dalles 138
Council Bluffs 124
Lawrence 104
Los Angeles 102
Ho Chi Minh City 86
Tokyo 71
Hanoi 69
Moscow 68
Mülheim 68
Buffalo 67
San Diego 59
Milan 55
Munich 47
Menlo Park 45
Boardman 44
Redwood City 41
Lauterbourg 38
São Paulo 36
Helsinki 33
San Mateo 33
Dallas 31
London 28
Chicago 26
Brussels 25
Toronto 23
Guangzhou 22
Norwalk 21
Zhengzhou 21
Nürnberg 20
Verona 20
Hefei 19
Nanjing 18
Saint Petersburg 18
Montreal 17
Phoenix 17
Mountain View 16
Orem 16
University Park 16
Atlanta 15
Lappeenranta 14
Nuremberg 14
Rio de Janeiro 14
Kunming 13
Haiphong 12
Palo Alto 12
Shanghai 12
Turku 12
Washington 12
Frankfurt am Main 11
Mexico City 11
Padova 11
Poplar 11
Baghdad 10
Boston 10
North Bergen 10
Redondo Beach 10
Warsaw 10
Da Nang 9
Falls Church 9
Quito 9
San Francisco 9
Vancouver 9
Bogotá 8
Brno 8
Brooklyn 8
Columbus 8
Florence 8
Guayaquil 8
Johannesburg 8
Lima 8
Manchester 8
Naples 8
Salvador 8
Shenyang 8
Tashkent 8
Vienna 8
Chennai 7
Denver 7
Fuzhou 7
Kilburn 7
Totale 34.911
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Nome #
Il principio di Huygens Fresnel e la diffrazione 774
Size-dependent reversal of the elastic interaction energy between misfit nanostructures 615
Valence charge fluctuations in YBa2Cu3O7-delta from core level spectroscopies 568
Interface formation between d metals and the Bi2Sr2CaCu2O8 surface 560
Carbon induced restructuring of the Si(111) surface 500
Idrogeno ed elio : atomi di storia 497
STM study of Si(111)7x7 reconstructed surface carbonization induced by acetylene 490
A Highly Emissive Water-Soluble Phosphorus Corrole 488
Kelvin probe and scanning tunneling microscope characterization of Langmuir-Blodgett sapphyrin films 481
Carbon nanotube synthesis from germanium nanoparticles on patterned substrates 481
COPPER PHTHALOCYANINE ON SI(111)-7X7 AND SI(001)-2X1 - AN XPS/AES AND STM STUDY 479
Beneficial defects: Exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires 473
Shaping Ge islands on Si(001) surfaces with misorientation angle 471
Structural study of the InAs quantum-dot nucleation on GaAs(001) 469
Real-time scanning tunneling microscopy observation of the evolution of Ge quantum dots on nanopatterned Si(001) surfaces 469
X-ray-photoemission-spectroscopy study of the surface deterioration of Bi2Sr2CaCu2O8 and Bi1.7Pb0.3Sr2CaCu2O8 single crystals at 26 K 460
Evolution of strained Ge islands grown on Si(111): a scanning probe microscopy study 458
Growth of ultrahigh-density quantum-confined germanium dots on SiO 2 thin films 456
A study of the pair distribution function of self-organized Ge quantum dots 456
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 455
Breaking elastic field symmetry in the Ge/Si(001) growth with substrate vicinality 454
Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy 453
Electronic correlations in YBa2Cu3O7-delta from Auger spectroscopy 452
STM study of acetylene reaction with Si(1 1 1): Observation of a carbon-induced Si(1 1 1) √3 × √3R30° reconstruction 448
Self-assembly of Ge quantum dots on Silicon:An example of controlled nanomanufacturing 447
Time evolution of graphene growth on SiC as a function of annealing temperature 447
Intermixing and buried interfacial structure in strained Ge/Si(105) facets 440
Core level spectroscopy in YBa2Cu3O7-delta: Electronic structure versus oxygen stoichiometry 439
Comparative study of Ag growth on GaAs(001) and (110) surfaces 438
Heteroepitaxy of Ge on singular and vicinal Si surfaces: Elastic field symmetry and nanostructure growth 436
Morphological instabilities of the InAs/GaAs(001) interface and their effect on the self-assembling of InAs quantum-dot arrays 428
MgO(100) structural investigations using EELFS and EXFAS techniques 428
Porphyrin thin films coated quartz crystal microbalances prepared by electropolymerization technique 427
Role of patterning in islands nucleation on semiconductor surfaces 426
Scanning tunneling microscopy studies of Ge/Si films on Si(111): From layer by layer to quantum dots 425
Ge growth on vicinal Si(001)surfaces: islands’ shape and pair interaction vs miscut angle 425
Characterization of real surfaces of superconductor materials by x-ray photoemission and x-ray Auger spectroscopies 424
Self-ordering of Ge islands on step-bunched Si(111) surfaces 423
Irreversible order-disorder transformation of Ge(0 0 1) probed by scanning tunnelling microscopy 423
Self-assembly of InAs and Si/Ge quantum dots on structured surfaces 420
Auger study of the electronic correlations in YBa2Cu3O7-delta 420
Photocurrent generation from Ge nanodots in the near UV and visible region 419
Topographic and spectroscopic analysis of ethylene adsorption on Si(111)7×7 by STM and STS 418
GeSi intermixing in Ge nanostructures on Si(111): An XAFS versus STM study 417
Composition of Ge(Si) islands in the growth of Ge on Si(111) 417
Ordering of Ge islands on Si(001) substrates patterned by nanoindentation 417
Copper phthalocyanine on Si(111)-7 × 7 and Si(001)-2 × 1: an XPS/AES and STM study 415
Core-level changes induced by oxygen in YBa2Cu3O7- 415
Towards a Controlled Growth of Self-assembled Nanostructures: Shaping, Ordering, and Localization in Ge/Si Heteroepitaxy 415
Synthesis of graphene-like transparent conductive films on dielectric substrates using a modified filtered vacuum arc system 415
The entangled role of strain and diffusion in driving the spontaneous formation of atolls and holes in Ge/Si(111) heteroepitaxy 415
Effects of substrate vicinality on 3D islanding in Ge/Si epitaxy 415
Chapter 29: Semiconductors quantum dots: the model case of Ge/Si system 415
Ripple-to-dome transition: The growth of Ge on Si(1 1 10) vicinal surface 409
Microscopic aspects of the Fe/Bi2Sr2CaCu2O8 reactive interface 408
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 408
Hugh-like island growth of Ge on strained vicinal Si(111) surfaces 404
Orientational phase diagram of the epitaxially strained Si(001): evidence of a singular (105) face 404
STM studies of Ge-Si thin layers epitaxially grown on Si(111) 402
Towards the ordering of Ge nanoislands on Si(001) surface with misorientation angle 400
Corroles at the Real Solid–Liquid Interface: In Situ STM Investigation of a Water-Soluble Corrole Layer Deposited onto Au(111) 400
Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth 397
Formation of a two-dimensional alloy/surface phase: Auger and STM study of Cu(Sn)(111) 396
Morphological and electronic characterization of functionalized graphene nanoribbons obtained by the unzipping of single-wall carbon nanotubes: a scanning tunneling microscopy study 392
Iron disilicide growth on Si(111): a scanning tunneling microscopy investigation 391
DISPOSITIVO PER LA PULIZIA DI PUNTE DI UN MICROSCOPIO A SCANSIONE TUNNEL (STM), MICROSCOPIO A SCANSIONE TUNNEL E RELATIVO PROCEDIMENTO DI PULIZIA 385
Early stage of Ge growth on Si(001) vicinal surfaces with an 8 degrees miscut along [110] 383
Step-step interaction on vicinal Si(001) surfaces studied by scanning tunneling microscopy 383
Erratum: Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS (Thin Solid Films (2000) 369 (29-32) PII: S0040609000008294) 383
Driving Ge Island Ordering on Nanostructured Si surfaces 380
Morphology of self-assembled quantum dots of InAs on GaAs(001) and Ge 0n Si(111) 378
Functionalized graphene nanoribbons as nano-carrier for several bio-catalysts: a new selective poultice and consolidation treatment based on the controlled release of cleaning agent of deteriorated sultural heritage surfaces 373
Folding and stacking defects of graphene flakes probed by electron nanobeam 372
Guide d'onda: fabbricazione e caratterizzazione 371
Early oxidation stages of the strained Ge/Si(105) surface: A reflectance anisotropy spectroscopy study 368
Growth of Ge-Si(111) epitaxial layers: intermixing, strain relaxation and island formation 365
Growth mode of 2-mercaptobenzoxazole on Cu(100) studied by scanning tunneling microscopy 365
Growth and characterization of Ge nanostructures on Si(111) 364
Oxidized few layers of graphene for the assembling of nano-micelles for the celaning of the black crust from peperino substrata 346
Diffusion and kinetics in epitaxial graphene growth on SiC 346
EELFS INVESTIGATION OF YBA2CU3O7-DELTA THIN-FILMS AND SINTERED SAMPLES 345
Early stage of CVD graphene synthesis on Ge(001) substrate 345
Electronic structure and charge fluctuations in YBa2Cu3O7 from EELS, XPS and Auger spectroscopies 343
Metal-interface formation on cleaved and etched single-crystal surfaces of Bi2Sr2CaCu2O8 341
Energy loss study of the electronic structure of YBa2Cu3O7-delta high Tc superconductor 330
Le matrici tridiagonali in matematica e la loro applicazione in fisica 324
Composition of Ge(Si) islands in the growth of Ge on Si(111) by x-ray spectromicroscopy 312
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting 307
Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS 306
Formation of extended thermal etch pits on annealed Ge wafers 302
Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing 300
Electronic structure of the Ge/Si(1 0 5) hetero-interface: An ARPES and DFT study 296
Two-dimensional Voronoi fractal as a sequential fragmentation: The size distribution of fragments 261
CVD growth of graphene on Ge(100) 239
STM/AFM study of Ge quantum dots grown on Si(111) 238
Van der Waals Heteroepitaxy of Germanene Islands on Graphite 238
Modified strain and elastic energy behavior of Ge islands formed on high-miscut Si(0 0 1) substrates 216
Perimeter fractal dimension analysis of corrole islands on Au(111) at the solid-water interface 196
Driving with temperature the synthesis of graphene on Ge(110) 158
Steps and Ge epitaxy on vicinal Si (111) surfaces: an STM study 154
Totale 40.140
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Categoria #
all - tutte 90.199
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 90.199
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.119 46 148 47 52 51 68 58 53 98 74 73 351
2022/20231.454 132 100 22 215 163 317 120 89 121 7 128 40
2023/2024572 70 23 32 17 47 172 47 35 8 21 11 89
2024/20252.945 88 482 261 154 55 178 234 154 199 189 542 409
2025/20263.869 288 255 419 293 325 153 434 524 433 325 234 186
2026/202730 30 0 0 0 0 0 0 0 0 0 0 0
Totale 41.553