IRIS
SGARLATA, ANNA
 Distribuzione geografica
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Continente #
NA - Nord America 31.333
EU - Europa 2.460
AS - Asia 489
SA - Sud America 50
Continente sconosciuto - Info sul continente non disponibili 19
OC - Oceania 5
AF - Africa 2
Totale 34.358
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Nazione #
US - Stati Uniti d'America 31.266
IT - Italia 570
DE - Germania 507
UA - Ucraina 460
CN - Cina 305
IE - Irlanda 287
GB - Regno Unito 160
FR - Francia 147
SE - Svezia 104
FI - Finlandia 92
KR - Corea 87
RU - Federazione Russa 64
MX - Messico 36
JP - Giappone 29
CA - Canada 27
BE - Belgio 22
UZ - Uzbekistan 20
EU - Europa 18
CO - Colombia 15
EC - Ecuador 15
HK - Hong Kong 11
IN - India 11
PE - Perù 8
PL - Polonia 8
RO - Romania 8
GR - Grecia 7
BR - Brasile 6
ES - Italia 5
VN - Vietnam 5
AU - Australia 4
IL - Israele 4
NL - Olanda 4
AR - Argentina 3
KG - Kirghizistan 3
PT - Portogallo 3
TH - Thailandia 3
AT - Austria 2
CL - Cile 2
DK - Danimarca 2
HN - Honduras 2
IR - Iran 2
LT - Lituania 2
LU - Lussemburgo 2
MY - Malesia 2
PK - Pakistan 2
SG - Singapore 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AE - Emirati Arabi Uniti 1
BG - Bulgaria 1
CZ - Repubblica Ceca 1
EG - Egitto 1
HU - Ungheria 1
IQ - Iraq 1
MD - Moldavia 1
NI - Nicaragua 1
NZ - Nuova Zelanda 1
SC - Seychelles 1
SV - El Salvador 1
TW - Taiwan 1
UY - Uruguay 1
Totale 34.358
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Città #
Woodbridge 9.372
Wilmington 8.612
Houston 8.281
Ann Arbor 866
Fairfield 723
Chandler 483
Jacksonville 402
Ashburn 359
Seattle 300
Dublin 287
Medford 223
Cambridge 216
Dearborn 159
Beijing 148
New York 143
Lawrence 104
Rome 93
Mülheim 68
San Diego 58
Menlo Park 45
Boardman 43
Redwood City 41
San Mateo 33
Milan 32
Brussels 22
Norwalk 21
Nürnberg 20
Zhengzhou 20
Hefei 19
Saint Petersburg 18
Verona 18
London 16
Mountain View 16
Nanjing 16
University Park 16
Guangzhou 15
Kunming 13
Toronto 13
Palo Alto 12
Padova 11
Falls Church 9
Shenyang 8
Kilburn 7
Kraków 7
Lappeenranta 7
Nanchang 7
Bogotá 6
Jinan 6
Los Angeles 6
Tappahannock 6
Washington 6
Auburn Hills 5
Fuzhou 5
Hanoi 5
Leawood 5
Mexico City 5
Napoli 5
Quito 5
Saint-jérôme 5
Shanghai 5
Tuen Mun 5
Corsico 4
Florence 4
Hounslow 4
Indiana 4
Loja 4
Montreal 4
Niscemi 4
Riobamba 4
Seoul 4
Torino 4
Trujillo 4
Bangkok 3
Benevento 3
Bolzano Vicentino 3
Brisbane 3
Cagliari 3
Carmiano 3
Chengdu 3
Chiswick 3
Detroit 3
Genoa 3
Hebei 3
Helsinki 3
Lima 3
Montréal 3
Pune 3
San Francisco 3
São Paulo 3
Tepic 3
Tokyo 3
Trento 3
Trieste 3
Wuhan 3
Alba 2
Anaheim 2
Anguillara Sabazia 2
Antrodoco 2
Anzio 2
Berlin 2
Totale 31.604
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Nome #
Il principio di Huygens Fresnel e la diffrazione 662
Real-time scanning tunneling microscopy observation of the evolution of Ge quantum dots on nanopatterned Si(001) surfaces 439
STM study of Si(111)7x7 reconstructed surface carbonization induced by acetylene 436
Kelvin probe and scanning tunneling microscope characterization of Langmuir-Blodgett sapphyrin films 422
COPPER PHTHALOCYANINE ON SI(111)-7X7 AND SI(001)-2X1 - AN XPS/AES AND STM STUDY 416
Structural study of the InAs quantum-dot nucleation on GaAs(001) 416
X-ray-photoemission-spectroscopy study of the surface deterioration of Bi2Sr2CaCu2O8 and Bi1.7Pb0.3Sr2CaCu2O8 single crystals at 26 K 416
Shaping Ge islands on Si(001) surfaces with misorientation angle 415
Carbon induced restructuring of the Si(111) surface 414
Carbon nanotube synthesis from germanium nanoparticles on patterned substrates 414
A Highly Emissive Water-Soluble Phosphorus Corrole 413
Growth of ultrahigh-density quantum-confined germanium dots on SiO 2 thin films 412
Evolution of strained Ge islands grown on Si(111): a scanning probe microscopy study 411
Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy 409
Beneficial defects: Exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires 405
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 403
Size-dependent reversal of the elastic interaction energy between misfit nanostructures 403
Intermixing and buried interfacial structure in strained Ge/Si(105) facets 399
A study of the pair distribution function of self-organized Ge quantum dots 391
Electronic correlations in YBa2Cu3O7-delta from Auger spectroscopy 391
Idrogeno ed elio : atomi di storia 390
Heteroepitaxy of Ge on singular and vicinal Si surfaces: Elastic field symmetry and nanostructure growth 390
Time evolution of graphene growth on SiC as a function of annealing temperature 389
Porphyrin thin films coated quartz crystal microbalances prepared by electropolymerization technique 388
Self-assembly of Ge quantum dots on Silicon:An example of controlled nanomanufacturing 388
MgO(100) structural investigations using EELFS and EXFAS techniques 387
STM study of acetylene reaction with Si(1 1 1): Observation of a carbon-induced Si(1 1 1) √3 × √3R30° reconstruction 384
Self-ordering of Ge islands on step-bunched Si(111) surfaces 384
The entangled role of strain and diffusion in driving the spontaneous formation of atolls and holes in Ge/Si(111) heteroepitaxy 384
Effects of substrate vicinality on 3D islanding in Ge/Si epitaxy 384
Morphological instabilities of the InAs/GaAs(001) interface and their effect on the self-assembling of InAs quantum-dot arrays 383
Breaking elastic field symmetry in the Ge/Si(001) growth with substrate vicinality 383
Role of patterning in islands nucleation on semiconductor surfaces 381
Comparative study of Ag growth on GaAs(001) and (110) surfaces 380
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 379
Irreversible order-disorder transformation of Ge(0 0 1) probed by scanning tunnelling microscopy 379
Topographic and spectroscopic analysis of ethylene adsorption on Si(111)7×7 by STM and STS 377
GeSi intermixing in Ge nanostructures on Si(111): An XAFS versus STM study 377
Core level spectroscopy in YBa2Cu3O7-delta: Electronic structure versus oxygen stoichiometry 377
Ripple-to-dome transition: The growth of Ge on Si(1 1 10) vicinal surface 377
Self-assembly of InAs and Si/Ge quantum dots on structured surfaces 372
Characterization of real surfaces of superconductor materials by x-ray photoemission and x-ray Auger spectroscopies 371
Ge growth on vicinal Si(001)surfaces: islands’ shape and pair interaction vs miscut angle 370
Microscopic aspects of the Fe/Bi2Sr2CaCu2O8 reactive interface 369
Towards a Controlled Growth of Self-assembled Nanostructures: Shaping, Ordering, and Localization in Ge/Si Heteroepitaxy 369
Photocurrent generation from Ge nanodots in the near UV and visible region 369
Core-level changes induced by oxygen in YBa2Cu3O7- 368
Formation of a two-dimensional alloy/surface phase: Auger and STM study of Cu(Sn)(111) 368
Copper phthalocyanine on Si(111)-7 × 7 and Si(001)-2 × 1: an XPS/AES and STM study 367
Ordering of Ge islands on Si(001) substrates patterned by nanoindentation 366
Valence charge fluctuations in YBa2Cu3O7-delta from core level spectroscopies 365
Orientational phase diagram of the epitaxially strained Si(001): evidence of a singular (105) face 365
Hugh-like island growth of Ge on strained vicinal Si(111) surfaces 363
Scanning tunneling microscopy studies of Ge/Si films on Si(111): From layer by layer to quantum dots 362
Erratum: Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS (Thin Solid Films (2000) 369 (29-32) PII: S0040609000008294) 361
Interface formation between d metals and the Bi2Sr2CaCu2O8 surface 360
Auger study of the electronic correlations in YBa2Cu3O7-delta 359
Morphological and electronic characterization of functionalized graphene nanoribbons obtained by the unzipping of single-wall carbon nanotubes: a scanning tunneling microscopy study 359
Step-step interaction on vicinal Si(001) surfaces studied by scanning tunneling microscopy 358
Composition of Ge(Si) islands in the growth of Ge on Si(111) 358
Chapter 29: Semiconductors quantum dots: the model case of Ge/Si system 356
Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth 353
Towards the ordering of Ge nanoislands on Si(001) surface with misorientation angle 353
STM studies of Ge-Si thin layers epitaxially grown on Si(111) 347
Iron disilicide growth on Si(111): a scanning tunneling microscopy investigation 346
Synthesis of graphene-like transparent conductive films on dielectric substrates using a modified filtered vacuum arc system 346
Early stage of Ge growth on Si(001) vicinal surfaces with an 8 degrees miscut along [110] 337
Growth mode of 2-mercaptobenzoxazole on Cu(100) studied by scanning tunneling microscopy 337
Growth and characterization of Ge nanostructures on Si(111) 332
Folding and stacking defects of graphene flakes probed by electron nanobeam 326
Growth of Ge-Si(111) epitaxial layers: intermixing, strain relaxation and island formation 322
Morphology of self-assembled quantum dots of InAs on GaAs(001) and Ge 0n Si(111) 319
Early oxidation stages of the strained Ge/Si(105) surface: A reflectance anisotropy spectroscopy study 318
Driving Ge Island Ordering on Nanostructured Si surfaces 317
Electronic structure and charge fluctuations in YBa2Cu3O7 from EELS, XPS and Auger spectroscopies 316
DISPOSITIVO PER LA PULIZIA DI PUNTE DI UN MICROSCOPIO A SCANSIONE TUNNEL (STM), MICROSCOPIO A SCANSIONE TUNNEL E RELATIVO PROCEDIMENTO DI PULIZIA 316
Functionalized graphene nanoribbons as nano-carrier for several bio-catalysts: a new selective poultice and consolidation treatment based on the controlled release of cleaning agent of deteriorated sultural heritage surfaces 315
Corroles at the Real Solid–Liquid Interface: In Situ STM Investigation of a Water-Soluble Corrole Layer Deposited onto Au(111) 309
EELFS INVESTIGATION OF YBA2CU3O7-DELTA THIN-FILMS AND SINTERED SAMPLES 305
Metal-interface formation on cleaved and etched single-crystal surfaces of Bi2Sr2CaCu2O8 304
Guide d'onda: fabbricazione e caratterizzazione 303
Diffusion and kinetics in epitaxial graphene growth on SiC 302
Oxidized few layers of graphene for the assembling of nano-micelles for the celaning of the black crust from peperino substrata 294
Energy loss study of the electronic structure of YBa2Cu3O7-delta high Tc superconductor 293
Early stage of CVD graphene synthesis on Ge(001) substrate 286
Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS 260
Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing 259
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting 244
Formation of extended thermal etch pits on annealed Ge wafers 243
Composition of Ge(Si) islands in the growth of Ge on Si(111) by x-ray spectromicroscopy 241
Electronic structure of the Ge/Si(1 0 5) hetero-interface: An ARPES and DFT study 240
Le matrici tridiagonali in matematica e la loro applicazione in fisica 235
Van der Waals Heteroepitaxy of Germanene Islands on Graphite 201
STM/AFM study of Ge quantum dots grown on Si(111) 195
Modified strain and elastic energy behavior of Ge islands formed on high-miscut Si(0 0 1) substrates 177
CVD growth of graphene on Ge(100) 174
Perimeter fractal dimension analysis of corrole islands on Au(111) at the solid-water interface 143
Steps and Ge epitaxy on vicinal Si (111) surfaces: an STM study 115
Driving with temperature the synthesis of graphene on Ge(110) 109
Growth of corrole films from solution: a nanometer-scale study at the real solid-liquid interface 57
Totale 34.392
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Categoria #
all - tutte 58.895
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 58.895
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20191.704 0 0 0 0 0 0 0 0 0 0 863 841
2019/20209.591 747 838 678 923 785 1.022 824 861 828 769 601 715
2020/20215.692 634 680 614 739 572 640 692 509 215 91 222 84
2021/20221.119 46 148 47 52 51 68 58 53 98 74 73 351
2022/20231.454 132 100 22 215 163 317 120 89 121 7 128 40
2023/2024473 70 23 32 17 47 172 47 35 8 21 1 0
Totale 34.610