The first stages of acetylene reaction with the Si(111)7 × 7 reconstructed surface kept at 600 °C are studied by recording scanning tunneling microscopy (STM) images during substrate exposure at a C2H2 pressure of 2 × 10-4 Pa (2 × 10-2 mbar). We observed the progressive substitution of the 7 × 7 reconstruction with a carbon induced Si(1 1 1)√3 × √3R30° reconstruction characterized by an atomic distance of 0.75 ± 0.02 nm, very close to that of the silicon 7 × 7 adatoms. This means that a carbon enrichment of the silicon outermost layers occurs giving rise to the formation of a Si-C phase different from the √3 × √3R30° reconstruction typical of Si terminated hexagonal SiC(0 0 0 1) surface with an atomic distance of 0.53 nm. To explain STM images, we propose a reconstruction model which involves carbon atoms in T4 and/or S5 sites, as occurring for B doped Si(1 1 1) surface. Step edges and areas around the silicon surface defects are the first regions involved in the reaction process, which spreads from the upper part of the step edges throughout the terraces. Step edges therefore, progressively flakes and this mechanism leads, for the highest exposures, to the formation of large inlets which makes completely irregular the straight edge typical of the Si(1 1 1)7 × 7 terraces. These observations indicate that there occurs an atomic diffusion like that driving the meandering effect. Finally, the formation of a few crystallites is shown also at the lowest acetylene exposures. This is the first STM experiment showing the possibility to have carbon incorporation in a Si(1 1 1) matrix for higher amounts than expected, at least up to 1/6 of silicon atomic layer. © 2003 Elsevier Science B.V. All rights reserved.

Castrucci P., S.A. (2003). STM study of acetylene reaction with Si(1 1 1): Observation of a carbon-induced Si(1 1 1) √3 × √3R30° reconstruction. SURFACE SCIENCE, 531(1) [10.1016/S0039-6028(03)00490-4].

STM study of acetylene reaction with Si(1 1 1): Observation of a carbon-induced Si(1 1 1) √3 × √3R30° reconstruction

CASTRUCCI, PAOLA;SGARLATA, ANNA;SCARSELLI, MANUELA ANGELA;De Crescenzi M.
2003

Abstract

The first stages of acetylene reaction with the Si(111)7 × 7 reconstructed surface kept at 600 °C are studied by recording scanning tunneling microscopy (STM) images during substrate exposure at a C2H2 pressure of 2 × 10-4 Pa (2 × 10-2 mbar). We observed the progressive substitution of the 7 × 7 reconstruction with a carbon induced Si(1 1 1)√3 × √3R30° reconstruction characterized by an atomic distance of 0.75 ± 0.02 nm, very close to that of the silicon 7 × 7 adatoms. This means that a carbon enrichment of the silicon outermost layers occurs giving rise to the formation of a Si-C phase different from the √3 × √3R30° reconstruction typical of Si terminated hexagonal SiC(0 0 0 1) surface with an atomic distance of 0.53 nm. To explain STM images, we propose a reconstruction model which involves carbon atoms in T4 and/or S5 sites, as occurring for B doped Si(1 1 1) surface. Step edges and areas around the silicon surface defects are the first regions involved in the reaction process, which spreads from the upper part of the step edges throughout the terraces. Step edges therefore, progressively flakes and this mechanism leads, for the highest exposures, to the formation of large inlets which makes completely irregular the straight edge typical of the Si(1 1 1)7 × 7 terraces. These observations indicate that there occurs an atomic diffusion like that driving the meandering effect. Finally, the formation of a few crystallites is shown also at the lowest acetylene exposures. This is the first STM experiment showing the possibility to have carbon incorporation in a Si(1 1 1) matrix for higher amounts than expected, at least up to 1/6 of silicon atomic layer. © 2003 Elsevier Science B.V. All rights reserved.
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/03 - Fisica della Materia
English
Con Impact Factor ISI
Alkynes; Carbon; Scanning tunneling microscopy; Silicon; Surface relaxation and reconstruction
Castrucci P., S.A. (2003). STM study of acetylene reaction with Si(1 1 1): Observation of a carbon-induced Si(1 1 1) √3 × √3R30° reconstruction. SURFACE SCIENCE, 531(1) [10.1016/S0039-6028(03)00490-4].
Castrucci, P; Sgarlata, A; Scarselli, Ma; De Crescenzi, M
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/52375
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