The controlled positioning of germanium (Ge) islands on silicon(111) without lithographic patterning was studied. The step-bunched (SB) silicon(111) surfaces were used as templates. Scanning tunneling microscope images showed that the Ge islands were regularly spaced. The results show an ordered distribution of equally spaced rows of islands on the wide terraces of SB substrates.
Sgarlata, A., Szkutnik, P.d., Balzarotti, A., Motta, N., Rosei, F. (2003). Self-ordering of Ge islands on step-bunched Si(111) surfaces, 83(19), 4002-4004 [10.1063/1.1626260].
Self-ordering of Ge islands on step-bunched Si(111) surfaces
SGARLATA, ANNA;BALZAROTTI, ADALBERTO;
2003-01-01
Abstract
The controlled positioning of germanium (Ge) islands on silicon(111) without lithographic patterning was studied. The step-bunched (SB) silicon(111) surfaces were used as templates. Scanning tunneling microscope images showed that the Ge islands were regularly spaced. The results show an ordered distribution of equally spaced rows of islands on the wide terraces of SB substrates.File in questo prodotto:
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