The controlled positioning of germanium (Ge) islands on silicon(111) without lithographic patterning was studied. The step-bunched (SB) silicon(111) surfaces were used as templates. Scanning tunneling microscope images showed that the Ge islands were regularly spaced. The results show an ordered distribution of equally spaced rows of islands on the wide terraces of SB substrates.

Sgarlata A., Szkutnik P.D., Balzarotti A., Motta N., & Rosei F. (2003). Self-ordering of Ge islands on step-bunched Si(111) surfaces, 83(19), 4002-4004 [10.1063/1.1626260].

Self-ordering of Ge islands on step-bunched Si(111) surfaces

SGARLATA, ANNA;BALZAROTTI, ADALBERTO;
2003

Abstract

The controlled positioning of germanium (Ge) islands on silicon(111) without lithographic patterning was studied. The step-bunched (SB) silicon(111) surfaces were used as templates. Scanning tunneling microscope images showed that the Ge islands were regularly spaced. The results show an ordered distribution of equally spaced rows of islands on the wide terraces of SB substrates.
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/03 - Fisica della Materia
English
Chemical vapor deposition; Growth (materials); Lithography; Monolayers; Nanostructured materials; Nucleation; Scanning tunneling microscopy; Self assembly; Silicon; Substrates; Island distributions; Wetting layers (WL); Germanium
Sgarlata A., Szkutnik P.D., Balzarotti A., Motta N., & Rosei F. (2003). Self-ordering of Ge islands on step-bunched Si(111) surfaces, 83(19), 4002-4004 [10.1063/1.1626260].
Sgarlata, A; Szkutnik, Pd; Balzarotti, A; Motta, N; Rosei, F
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/57223
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