X-ray photoemission electron microscopy (XPEEM) is used to investigate the chemical composition of Ge/Si individual islands obtained by depositing Ge on Si(111) substrates in the temperature range 460-560 degreesC. We are able to correlate specific island shapes with a definite chemical contrast in XPEEM images, at each given temperature. In particular, strained triangular islands exhibit a Si surface content of 5%-20%, whereas it grows up to 30%-40% for "atoll-like" structures. The island's stage of evolution is shown to be correlated with its surface composition. Finally, by plotting intensity contour maps, we find that island centers are rich in Si. (C) 2004 American Institute of Physics.
Ratto, F., Rosei, F., Locatelli, A., Cherifi, S., Fontana, S., Heun, S., et al. (2004). Composition of Ge(Si) islands in the growth of Ge on Si(111). APPLIED PHYSICS LETTERS.
Composition of Ge(Si) islands in the growth of Ge on Si(111)
SGARLATA, ANNA;
2004-01-01
Abstract
X-ray photoemission electron microscopy (XPEEM) is used to investigate the chemical composition of Ge/Si individual islands obtained by depositing Ge on Si(111) substrates in the temperature range 460-560 degreesC. We are able to correlate specific island shapes with a definite chemical contrast in XPEEM images, at each given temperature. In particular, strained triangular islands exhibit a Si surface content of 5%-20%, whereas it grows up to 30%-40% for "atoll-like" structures. The island's stage of evolution is shown to be correlated with its surface composition. Finally, by plotting intensity contour maps, we find that island centers are rich in Si. (C) 2004 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
