The growth of Fe on Si(111)(7 x 7) has been studied by scanning tunneling microscopy as a function of the deposited thickness using both solid phase epitaxy and reactive deposition epitaxy. At submonolayer deposition of Fe and subsequent annealing at 600-degrees-C, flat islands of silicide with hexagonal symmetry become visible above the Si(7 x 7) reconstructed surface which supplies a bond length reference scale for the alloy. The islands tend to grow at the expense of the silicon substrate, creating a large number of surface steps. Atomically resolved images of the islands show that in all cases a cubic (2 x 2) phase is formed. The interplanar (111) distance is compatible more with the FeSi (CsCl structure) than with the FeSi2 (CaF2) epitaxy. The orthorhombic beta phase does not form under the present growth conditions.

Motta N., Sgarlata A., Gaggiotti G., Patella F., Balzarotti A., & De Crescenzi M. (1993). Iron disilicide growth on Si(111): a scanning tunneling microscopy investigation. SURFACE SCIENCE, 284(3), 257-262.

Iron disilicide growth on Si(111): a scanning tunneling microscopy investigation

SGARLATA, ANNA;PATELLA, FULVIA;BALZAROTTI, ADALBERTO;
1993

Abstract

The growth of Fe on Si(111)(7 x 7) has been studied by scanning tunneling microscopy as a function of the deposited thickness using both solid phase epitaxy and reactive deposition epitaxy. At submonolayer deposition of Fe and subsequent annealing at 600-degrees-C, flat islands of silicide with hexagonal symmetry become visible above the Si(7 x 7) reconstructed surface which supplies a bond length reference scale for the alloy. The islands tend to grow at the expense of the silicon substrate, creating a large number of surface steps. Atomically resolved images of the islands show that in all cases a cubic (2 x 2) phase is formed. The interplanar (111) distance is compatible more with the FeSi (CsCl structure) than with the FeSi2 (CaF2) epitaxy. The orthorhombic beta phase does not form under the present growth conditions.
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/03 - Fisica della Materia
English
ELECTRONIC-STRUCTURE; SURFACE
Crystal growth; Epitaxial growth; Iron; Metallizing; Scanning electron microscopy; Surface phenomena; Iron disilicide; Reactive deposition epitaxy; Scanning tunneling microscopy; Solid phase epitaxy; Semiconducting silicon
Motta N., Sgarlata A., Gaggiotti G., Patella F., Balzarotti A., & De Crescenzi M. (1993). Iron disilicide growth on Si(111): a scanning tunneling microscopy investigation. SURFACE SCIENCE, 284(3), 257-262.
Motta, N; Sgarlata, A; Gaggiotti, G; Patella, F; Balzarotti, A; De Crescenzi, M
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/57213
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