We followed by X-ray Photoelectron Spectroscopy (XPS) the time evolution of graphene layers obtained by annealing 3C SiC(111)/Si(111) crystals at different temperatures. The intensity of the carbon signal provides a quantification of the graphene thickness as a function of the annealing time, which follows a power law with exponent 0.5. We show that a kinetic model, based on a bottom-up growth mechanism, provides a full explanation to the evolution of the graphene thickness as a function of time, allowing to calculate the effective activation energy of the process and the energy barriers, in excellent agreement with previous theoretical results. Our study provides a complete and exhaustive picture of Si diffusion into the SiC matrix, establishing the conditions for a perfect control of the graphene growth by Si sublimation.

Zarotti, F., Gupta, B., Iacopi, F., Sgarlata, A., Tomellini, M., & Motta, N. (2016). Time evolution of graphene growth on SiC as a function of annealing temperature. CARBON, 98, 307-312 [10.1016/j.carbon.2015.11.026].

Time evolution of graphene growth on SiC as a function of annealing temperature

GUPTA, BHARAT;SGARLATA, ANNA;TOMELLINI, MASSIMO;MOTTA, NUNZIO
2016

Abstract

We followed by X-ray Photoelectron Spectroscopy (XPS) the time evolution of graphene layers obtained by annealing 3C SiC(111)/Si(111) crystals at different temperatures. The intensity of the carbon signal provides a quantification of the graphene thickness as a function of the annealing time, which follows a power law with exponent 0.5. We show that a kinetic model, based on a bottom-up growth mechanism, provides a full explanation to the evolution of the graphene thickness as a function of time, allowing to calculate the effective activation energy of the process and the energy barriers, in excellent agreement with previous theoretical results. Our study provides a complete and exhaustive picture of Si diffusion into the SiC matrix, establishing the conditions for a perfect control of the graphene growth by Si sublimation.
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/03 - Fisica della Materia
English
Chemistry (all)
http://www.journals.elsevier.com/carbon/
Zarotti, F., Gupta, B., Iacopi, F., Sgarlata, A., Tomellini, M., & Motta, N. (2016). Time evolution of graphene growth on SiC as a function of annealing temperature. CARBON, 98, 307-312 [10.1016/j.carbon.2015.11.026].
Zarotti, F; Gupta, B; Iacopi, F; Sgarlata, A; Tomellini, M; Motta, N
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/136175
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