One of the problems that graphene is facing in electronic applications is its quality, which is still far from the level required to obtain an industrial-scale production of reliable nanoscale devices, and it is ultimately related to the growth method. Understanding the kinetics of graphene growth is an outstanding problem in physics, whose solution is the key to achieving full control on graphene’s properties.
Tomellini, M., Gupta, B., Sgarlata, A., Motta, N. (2017). Diffusion and kinetics in epitaxial graphene growth on SiC. In Growing Graphene on Semiconductors (pp. 109-140). Singapore : Pan Stanford Publishing Pte. Ltd. [10.1201/9781315186153].
Diffusion and kinetics in epitaxial graphene growth on SiC
Tomellini M
;Gupta B;Sgarlata A;Motta N
2017-01-01
Abstract
One of the problems that graphene is facing in electronic applications is its quality, which is still far from the level required to obtain an industrial-scale production of reliable nanoscale devices, and it is ultimately related to the growth method. Understanding the kinetics of graphene growth is an outstanding problem in physics, whose solution is the key to achieving full control on graphene’s properties.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
