The strained {105} facet, fundamental in the heteroepitaxial growth of Ge/Si(100), is investigated through a combination of scanning tunneling microscopy, reflectance anisotropy spectroscopy, and density functional theory simulations. Besides providing a strong independent confirmation of the proposed structural model, optical measurements give insight into Si/Ge intermixing, reveal hidden signatures of the buried interface, and give access to a complementary viewpoint of the epitaxial growth with respect to standard top-layer probing. Strained subsurface atoms are found to strongly determine the electronic and optical properties of the whole reconstruction. Moreover, we demonstrate how their unique spectral fingerprint is a sensitive probe of the local chemical bonding environment and allows the stoichiometry of atomic bonds to be monitored within and beneath the surface layer.

Fazi, L., Hogan, C., Palummo, M., Persichetti, L., Goletti, C., Palummo, M., et al. (2013). Intermixing and buried interfacial structure in strained Ge/Si(105) facets. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 88, 195312 [10.1103/PhysRevB.88.195312].

Intermixing and buried interfacial structure in strained Ge/Si(105) facets

PALUMMO, MAURIZIA;Persichetti, L;GOLETTI, CLAUDIO;SGARLATA, ANNA;
2013-11-26

Abstract

The strained {105} facet, fundamental in the heteroepitaxial growth of Ge/Si(100), is investigated through a combination of scanning tunneling microscopy, reflectance anisotropy spectroscopy, and density functional theory simulations. Besides providing a strong independent confirmation of the proposed structural model, optical measurements give insight into Si/Ge intermixing, reveal hidden signatures of the buried interface, and give access to a complementary viewpoint of the epitaxial growth with respect to standard top-layer probing. Strained subsurface atoms are found to strongly determine the electronic and optical properties of the whole reconstruction. Moreover, we demonstrate how their unique spectral fingerprint is a sensitive probe of the local chemical bonding environment and allows the stoichiometry of atomic bonds to be monitored within and beneath the surface layer.
26-nov-2013
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/03 - FISICA DELLA MATERIA
English
Con Impact Factor ISI
Fazi, L., Hogan, C., Palummo, M., Persichetti, L., Goletti, C., Palummo, M., et al. (2013). Intermixing and buried interfacial structure in strained Ge/Si(105) facets. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 88, 195312 [10.1103/PhysRevB.88.195312].
Fazi, L; Hogan, C; Palummo, M; Persichetti, L; Goletti, C; Palummo, M; Sgarlata, A; Balzarotti, A
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/82431
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