The study of growth and evolution of Ge/Si(111) islands by STM and AFM is presented and discussed. The coexistence of strained and relaxed islands in agreement with theoretical equilibrium calculations is reported. The formation of a trench around ripened island due to selective depletion of the wetting layer is observed for the first time in the case of Ge/Si(111) islands. The presence of misfit dislocations at the edges of the ripened islands is associated to the promotion of an atomic current from higher strain island regions. The Ge atoms move from the top of the island centre to the base thereby leading to a rounding of the island shape and to a decrease of the aspect ratio.
Rosei, F., Motta, N., Sgarlata, A., Balzarotti, A. (2002). Growth and characterization of Ge nanostructures on Si(111), 588, 252-262 [10.1007/3-540-45850-6_22].
Growth and characterization of Ge nanostructures on Si(111)
SGARLATA, ANNA;BALZAROTTI, ADALBERTO
2002-01-01
Abstract
The study of growth and evolution of Ge/Si(111) islands by STM and AFM is presented and discussed. The coexistence of strained and relaxed islands in agreement with theoretical equilibrium calculations is reported. The formation of a trench around ripened island due to selective depletion of the wetting layer is observed for the first time in the case of Ge/Si(111) islands. The presence of misfit dislocations at the edges of the ripened islands is associated to the promotion of an atomic current from higher strain island regions. The Ge atoms move from the top of the island centre to the base thereby leading to a rounding of the island shape and to a decrease of the aspect ratio.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
