The work function of solid layers of increasing thicknesses of E2M8- sapphyrin, deposited on a gold substrate by the Langmuir-Blodgett method, has been measured by the Kelvin-probe technique. The results show that the contact-potential-difference values depend upon the layer thickness, reaching saturation after a certain amount of deposited sapphyrin. Scanning tunneling microscope images taken at the same coverages show that corresponding with this threshold, sapphyrin forms a true continuous layer on gold, completely covering the substrate. Evolution of the layer towards its completion is accompanied by a continuous variation of the work-function value, consistent with an increasing dipole term due to the interaction of sapphyrin with the metal substrate. (C) 1999 American Institute of Physics. [S0003-6951(99)04235-7].
Goletti, C., Sgarlata, A., Motta, N., Chiaradia, P., Paolesse, R., Angelaccio, A., et al. (1999). Kelvin probe and scanning tunneling microscope characterization of Langmuir-Blodgett sapphyrin films. APPLIED PHYSICS LETTERS, 75(9), 1237-1239 [10.1063/1.124653].
Kelvin probe and scanning tunneling microscope characterization of Langmuir-Blodgett sapphyrin films
GOLETTI, CLAUDIO;SGARLATA, ANNA;MOTTA, NUNZIO;CHIARADIA, PIETRO;PAOLESSE, ROBERTO;DI NATALE, CORRADO;D'AMICO, ARNALDO;
1999-01-01
Abstract
The work function of solid layers of increasing thicknesses of E2M8- sapphyrin, deposited on a gold substrate by the Langmuir-Blodgett method, has been measured by the Kelvin-probe technique. The results show that the contact-potential-difference values depend upon the layer thickness, reaching saturation after a certain amount of deposited sapphyrin. Scanning tunneling microscope images taken at the same coverages show that corresponding with this threshold, sapphyrin forms a true continuous layer on gold, completely covering the substrate. Evolution of the layer towards its completion is accompanied by a continuous variation of the work-function value, consistent with an increasing dipole term due to the interaction of sapphyrin with the metal substrate. (C) 1999 American Institute of Physics. [S0003-6951(99)04235-7].I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.