The spontaneous formation of nanometric and highly dense (similar to 3x10(12) cm(-2)) Ge droplets on thin SiO2 film on Si(001) is investigated by scanning tunneling microscopy and spectroscopy. Ge dots have been grown by depositing Ge on the clean SiO2 surface at room temperature and then annealing the sample at 500 degrees C. Ge dots appear to be free of germanium oxides and characterized by a flat surface with the onset of {113} faceting. I-V curves show that they have an energy gap of approximately 1.8 eV, well above that of bulk Ge. Fabrication of nanometer-sized, highly dense pure Ge droplets is very promising for nanoelectronics applications. (c) 2006 American Institute of Physics.

Berbezier, I., Karmous, A., Ronda, A., Sgarlata, A., Balzarotti, A., Castrucci, P., et al. (2006). Growth of ultrahigh-density quantum-confined germanium dots on SiO 2 thin films. APPLIED PHYSICS LETTERS, 89(6) [10.1063/1.2221875].

Growth of ultrahigh-density quantum-confined germanium dots on SiO 2 thin films

SGARLATA, ANNA;BALZAROTTI, ADALBERTO;CASTRUCCI, PAOLA;SCARSELLI, MANUELA ANGELA;
2006-01-01

Abstract

The spontaneous formation of nanometric and highly dense (similar to 3x10(12) cm(-2)) Ge droplets on thin SiO2 film on Si(001) is investigated by scanning tunneling microscopy and spectroscopy. Ge dots have been grown by depositing Ge on the clean SiO2 surface at room temperature and then annealing the sample at 500 degrees C. Ge dots appear to be free of germanium oxides and characterized by a flat surface with the onset of {113} faceting. I-V curves show that they have an energy gap of approximately 1.8 eV, well above that of bulk Ge. Fabrication of nanometer-sized, highly dense pure Ge droplets is very promising for nanoelectronics applications. (c) 2006 American Institute of Physics.
2006
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/03 - FISICA DELLA MATERIA
English
Annealing; Crystal growth; Germanium; Scanning tunneling microscopy; Silica; Thin films; Ge droplets; Nanoelectronics; Quantum-confined germanium dots; SiO2 thin films; Semiconductor quantum dots
3
Berbezier, I., Karmous, A., Ronda, A., Sgarlata, A., Balzarotti, A., Castrucci, P., et al. (2006). Growth of ultrahigh-density quantum-confined germanium dots on SiO 2 thin films. APPLIED PHYSICS LETTERS, 89(6) [10.1063/1.2221875].
Berbezier, I; Karmous, A; Ronda, A; Sgarlata, A; Balzarotti, A; Castrucci, P; Scarselli, Ma; De Crescenzi, M
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/57214
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