We have followed by AFM and STM the epitaxial growth of InAs on GaAs(001) and Ge on Si(111) starting from the initial formation of a strained two-dimensional wetting layer up to the self-assembled nucleation and growth of 3D nanoparticles. In the work we underline many aspects of the morphology of both systems which substantiate the role either of kinetics or thermodynamics in the process of growth. Issues as composition and ordering of the wetting layer and substrate, size and faceting of the dots, strain relaxation by coherent and/or dislocated islands are also investigated.
Arciprete, F., Balzarotti, A., Fanfoni, M., Motta, N., Patella, F., Sgarlata, A. (2001). Morphology of self-assembled quantum dots of InAs on GaAs(001) and Ge 0n Si(111). In Morphology of self-assembled quantum dots of InAs on GaAs(001) and Ge 0n Si(111) (pp. 71-98). Trivandrum : Transworld Research Network.
Morphology of self-assembled quantum dots of InAs on GaAs(001) and Ge 0n Si(111)
ARCIPRETE, FABRIZIO;BALZAROTTI, ADALBERTO;FANFONI, MASSIMO;MOTTA, NUNZIO;PATELLA, FULVIA;SGARLATA, ANNA
2001-01-01
Abstract
We have followed by AFM and STM the epitaxial growth of InAs on GaAs(001) and Ge on Si(111) starting from the initial formation of a strained two-dimensional wetting layer up to the self-assembled nucleation and growth of 3D nanoparticles. In the work we underline many aspects of the morphology of both systems which substantiate the role either of kinetics or thermodynamics in the process of growth. Issues as composition and ordering of the wetting layer and substrate, size and faceting of the dots, strain relaxation by coherent and/or dislocated islands are also investigated.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
