By combining scanning probe microscopy with Raman and x-ray photoelectron spectroscopies, we investigate the evolution of CVD-grown graphene/Ge(001) as a function of the deposition temperature in close proximity to the Ge melting point, highlighting an abrupt change of the graphene's quality, morphology, electronic properties and growth mode at 930 °C. We attribute this discontinuity to the incomplete surface melting of the Ge substrate and show how incomplete melting explains a variety of diverse and long-debated peculiar features of the graphene/Ge(001), including the characteristic nanostructuring of the Ge substrate induced by graphene overgrowth. We find that the quasi-liquid Ge layer formed close to 930 °C is fundamental to obtain high-quality graphene, while a temperature decrease of 10° already results in a wrinkled and defective graphene film.

Persichetti, L., Di Gaspare, L., Fabbri, F., Scaparro, A.m., Notargiacomo, A., Sgarlata, A., et al. (2019). Abrupt changes in the graphene on Ge(001) system at the onset of surface melting. CARBON, 145, 345-351 [10.1016/j.carbon.2019.01.043].

Abrupt changes in the graphene on Ge(001) system at the onset of surface melting

Persichetti, L.
;
Sgarlata, A.
Membro del Collaboration Group
;
Fanfoni, M.
Membro del Collaboration Group
;
2019-01-01

Abstract

By combining scanning probe microscopy with Raman and x-ray photoelectron spectroscopies, we investigate the evolution of CVD-grown graphene/Ge(001) as a function of the deposition temperature in close proximity to the Ge melting point, highlighting an abrupt change of the graphene's quality, morphology, electronic properties and growth mode at 930 °C. We attribute this discontinuity to the incomplete surface melting of the Ge substrate and show how incomplete melting explains a variety of diverse and long-debated peculiar features of the graphene/Ge(001), including the characteristic nanostructuring of the Ge substrate induced by graphene overgrowth. We find that the quasi-liquid Ge layer formed close to 930 °C is fundamental to obtain high-quality graphene, while a temperature decrease of 10° already results in a wrinkled and defective graphene film.
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/03 - Fisica della Materia
English
Catalysis; Chemical vapor deposition; Germanium; Graphene; Scanning tunneling microscopy; Chemistry (all); Materials Science (all)
Persichetti, L., Di Gaspare, L., Fabbri, F., Scaparro, A.m., Notargiacomo, A., Sgarlata, A., et al. (2019). Abrupt changes in the graphene on Ge(001) system at the onset of surface melting. CARBON, 145, 345-351 [10.1016/j.carbon.2019.01.043].
Persichetti, L; Di Gaspare, L; Fabbri, F; Scaparro, Am; Notargiacomo, A; Sgarlata, A; Fanfoni, M; Miseikis, V; Coletti, C; De Seta, M
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/213105
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