The atomistic pathway towards the growth of semiconductors heterostructures on vicinal surfaces is investigated in a special experiment. A step-by-step study of the early stages of Ge deposition at T=873 K on a 8 degrees off Si(001) surface miscut along [110] is performed by scanning tunneling microscopy (STM). The microscopic processes occurring during growth are identified. Highly resolved STM images show how double height steps, which characterize the clean substrate, evolve by a step flow process generated by addimer chains located at specific positions. This process leads to the formation of metastable single domains until the development of {105} faceted ripples extending along the whole surface in the miscut direction.
Szkutnik, P., Sgarlata, A., Balzarotti, A., Motta, N., Ronda, A., Berbezier, I. (2007). Early stage of Ge growth on Si(001) vicinal surfaces with an 8 degrees miscut along [110]. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 75(3) [10.1103/PhysRevB.75.033305].
Early stage of Ge growth on Si(001) vicinal surfaces with an 8 degrees miscut along [110]
SGARLATA, ANNA;BALZAROTTI, ADALBERTO;
2007-01-01
Abstract
The atomistic pathway towards the growth of semiconductors heterostructures on vicinal surfaces is investigated in a special experiment. A step-by-step study of the early stages of Ge deposition at T=873 K on a 8 degrees off Si(001) surface miscut along [110] is performed by scanning tunneling microscopy (STM). The microscopic processes occurring during growth are identified. Highly resolved STM images show how double height steps, which characterize the clean substrate, evolve by a step flow process generated by addimer chains located at specific positions. This process leads to the formation of metastable single domains until the development of {105} faceted ripples extending along the whole surface in the miscut direction.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
