IRIS
BALZAROTTI, ADALBERTO
 Distribuzione geografica
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Continente #
NA - Nord America 55.256
AS - Asia 7.510
EU - Europa 6.150
SA - Sud America 881
AF - Africa 64
Continente sconosciuto - Info sul continente non disponibili 18
OC - Oceania 17
Totale 69.896
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Nazione #
US - Stati Uniti d'America 55.123
SG - Singapore 4.523
CN - Cina 1.215
UA - Ucraina 1.165
DE - Germania 1.051
RU - Federazione Russa 770
BR - Brasile 755
IE - Irlanda 634
HK - Hong Kong 603
IT - Italia 576
SE - Svezia 460
VN - Vietnam 421
FR - Francia 399
GB - Regno Unito 328
PL - Polonia 323
FI - Finlandia 274
KR - Corea 228
JP - Giappone 204
CA - Canada 80
IN - India 72
AR - Argentina 47
BD - Bangladesh 39
UZ - Uzbekistan 37
MX - Messico 30
BE - Belgio 29
NL - Olanda 29
IQ - Iraq 26
EC - Ecuador 24
ES - Italia 21
ZA - Sudafrica 21
ID - Indonesia 17
TR - Turchia 15
EU - Europa 14
RO - Romania 14
CL - Cile 13
PK - Pakistan 13
AU - Australia 12
CZ - Repubblica Ceca 12
IL - Israele 12
AT - Austria 11
CO - Colombia 10
PH - Filippine 10
MY - Malesia 9
PE - Perù 9
SA - Arabia Saudita 9
EG - Egitto 8
JM - Giamaica 8
BG - Bulgaria 7
KE - Kenya 7
KG - Kirghizistan 7
KZ - Kazakistan 7
LT - Lituania 7
MA - Marocco 7
TW - Taiwan 7
VE - Venezuela 7
BO - Bolivia 6
CH - Svizzera 6
PT - Portogallo 6
PY - Paraguay 6
TH - Thailandia 6
AE - Emirati Arabi Uniti 5
GR - Grecia 5
NZ - Nuova Zelanda 5
TN - Tunisia 5
DO - Repubblica Dominicana 4
ET - Etiopia 4
IR - Iran 4
DK - Danimarca 3
DZ - Algeria 3
HN - Honduras 3
JO - Giordania 3
LB - Libano 3
MD - Moldavia 3
MK - Macedonia 3
NO - Norvegia 3
OM - Oman 3
TT - Trinidad e Tobago 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AL - Albania 2
AZ - Azerbaigian 2
HR - Croazia 2
HU - Ungheria 2
KW - Kuwait 2
NP - Nepal 2
SN - Senegal 2
UY - Uruguay 2
XK - ???statistics.table.value.countryCode.XK??? 2
AM - Armenia 1
BB - Barbados 1
BF - Burkina Faso 1
BH - Bahrain 1
BY - Bielorussia 1
CI - Costa d'Avorio 1
CR - Costa Rica 1
CY - Cipro 1
DM - Dominica 1
EE - Estonia 1
FK - Isole Falkland (Malvinas) 1
GT - Guatemala 1
GY - Guiana 1
Totale 69.884
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Città #
Woodbridge 16.274
Wilmington 12.821
Houston 12.299
Ann Arbor 2.055
Fairfield 1.755
Singapore 1.369
Jacksonville 1.092
Ashburn 1.012
Seattle 725
Chandler 677
San Jose 648
Dublin 634
Hong Kong 596
Cambridge 564
Beijing 540
Medford 480
Dearborn 415
Kraków 302
New York 252
Santa Clara 239
The Dalles 230
Lawrence 226
Mülheim 207
Los Angeles 154
Tokyo 144
Buffalo 126
Council Bluffs 126
Ho Chi Minh City 126
San Mateo 125
Hanoi 111
Menlo Park 108
Rome 105
Moscow 98
San Diego 91
São Paulo 74
Boardman 65
Milan 63
University Park 57
Dallas 54
Hefei 40
Helsinki 40
Saint Petersburg 39
Redwood City 37
Chicago 36
Guangzhou 36
Munich 35
Verona 34
Zhengzhou 34
Mountain View 31
Norwalk 31
Rio de Janeiro 30
Brussels 29
Nanjing 29
Toronto 26
Lauterbourg 25
Atlanta 23
London 23
Falls Church 22
Kunming 22
Nürnberg 18
San Francisco 18
Nuremberg 17
Warsaw 17
Da Nang 15
Indiana 15
Orem 15
Hangzhou 14
Montreal 14
Phoenix 14
Shanghai 14
Auburn Hills 13
Belo Horizonte 13
Saint-jérôme 13
Salvador 13
Turku 13
Chennai 12
Frankfurt am Main 12
Haiphong 12
Porto Alegre 12
Redondo Beach 12
Brasília 11
Brno 11
Amsterdam 10
Baghdad 10
Curitiba 10
Donetsk 10
Fuzhou 10
Nanchang 10
Tashkent 10
Brooklyn 9
Campinas 9
Denver 9
Dhaka 9
Miami 9
Palo Alto 9
Shenzhen 9
Tappahannock 9
Boston 8
Goiânia 8
Guayaquil 8
Totale 58.145
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Nome #
Size-dependent reversal of the elastic interaction energy between misfit nanostructures 613
Atomi,Molecole e Solidi: Esercizi risolti 605
The Unexpected Role of Arsenic in Driving the Selective Growth of InAs Quantum Dots on GaAs 599
Palladium clusters on graphite: a Bremsstrahlung Isochromat Spectroscopy study 586
EXAFS spectroscopy of amorphous Fe-Ni steels 577
Valence charge fluctuations in YBa2Cu3O7-delta from core level spectroscopies 566
Effects of the asymmetry on the radial distribution function in the EXAFS of metallic glasses 564
Multiple scattering effects in the EXAFS of Fe and TiFe 562
Theory of pairing in the Cu-O plane: Three-band hubbard model and beyond 558
Interface formation between d metals and the Bi2Sr2CaCu2O8 surface 557
Hole pairing in hight-Tc superconductors 551
Structural and electronic properties of Fe and TiFe from extended and near-edge x-ray absorption structure 549
Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001) 542
Probing the electronic properties of As-rich reconstructed surfaces of GaAs(001) by Electron Energy Loss Spectroscopy 539
2D Voronoi tessellation generated by lines and belts of dots 510
Electronic anisotropy of the GaAs(001) surface studied by energy loss spectroscopy 489
XPS and STM study of Mn incorporation on the GaAs(001) surface 486
Beneficial defects: Exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires 471
Scaling law and dynamical exponent in the Volmer-Weber growth mode: silver on GaAs(001)2 x 4 470
Cluster approach to the three-band Hubbard model of the Cu-O plane: Superconducting pairs 470
Shaping Ge islands on Si(001) surfaces with misorientation angle 469
Real-time scanning tunneling microscopy observation of the evolution of Ge quantum dots on nanopatterned Si(001) surfaces 468
Step erosion during nucleation of InAsGaAs (001) quantum dots 467
Structural study of the InAs quantum-dot nucleation on GaAs(001) 464
EXAFS study of the [BaCuO2](2)/[(Ca,Sr)CuO2](n) artificial superconducting superlattices 463
Canonical transformation of the Hubbard model and W=0 pairing: Comparison with exact diagonalization results 461
Valence band and In-4d core level photoemission study of de-capped and ion-bombarded-annealed InAs(001) epitaxial surfaces 458
Anisotropy of the GaAs(001)-beta 2(2x4) surface from high-resolution electron energy loss spectroscopy 458
Growth of ultrahigh-density quantum-confined germanium dots on SiO 2 thin films 455
A study of the pair distribution function of self-organized Ge quantum dots 454
X-ray-photoemission-spectroscopy study of the surface deterioration of Bi2Sr2CaCu2O8 and Bi1.7Pb0.3Sr2CaCu2O8 single crystals at 26 K 454
Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy 452
Adsorption of molecular oxygen on GaAs(001) studied using high-resolution electron energy-loss spectroscopy 451
Electronic correlations in YBa2Cu3O7-delta from Auger spectroscopy 451
Coarsening effect on island-size scaling: The model case InAs/GaAs(001) 451
XAS study of (BaCuO2)(2)/(CaCuO2)(n) superlattices 449
Breaking elastic field symmetry in the Ge/Si(001) growth with substrate vicinality 449
Etch pits and tunnel barrier in chemically etched YBa2Cu3O7-[delta] crystals by scanning tunneling microscopy 445
Dynamic behavior of silver islands growing on GaAs(001)2X4 substrate 445
Self-assembly of Ge quantum dots on Silicon:An example of controlled nanomanufacturing 442
Atomic Force microscopy analyses of InAs/GaAs heterostructures grown by MBE 441
Core level spectroscopy in YBa2Cu3O7-delta: Electronic structure versus oxygen stoichiometry 437
"W=0" pairing in Cu-O clusters and in the plane 437
The GaAS(001)-c(4x4) surface: a new perspective from energy loss spectra 436
Correlation effects on the L3VV Auger line shape of Cd1-xMnxTe 436
W = 0 pairing in Hubbard and related models of low-dimensional superconductors 436
Selective growth of InAs quantum dots on SiO2-masked GaAs 436
Characterization of beta-FeSi2 and the Fe/Si(111) interface by electronic spectroscopies 436
Comparative study of Ag growth on GaAs(001) and (110) surfaces 433
Morphology of self-assembled InAs quantum dots on GaAs(001) 433
Heteroepitaxy of Ge on singular and vicinal Si surfaces: Elastic field symmetry and nanostructure growth 433
InAs/GaAs(001) epitaxy: Kinetic effects in the two-dimensional to three-dimensional transition 432
Electron energy loss study of Ag- and Au-GaAs(110) interfaces 431
Inx Ga(1-x)As quantum dots grown on GaAs studied by EXAFS in total reflection mode (ReflEXAFS) 430
Angular dependence of the oxygen K-edge fine structure in electron-energy loss spectra of Bi2-xPbxSr2CaCu2O8 430
The influence of the wetting layer morphology on the nucleation and the evolution of InAs/GaAs (001) Quantum Dots 427
How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs/GaAs(001) 427
MgO(100) structural investigations using EELFS and EXFAS techniques 426
Role of patterning in islands nucleation on semiconductor surfaces 425
Modelling of the reactive interface formation on Bi2Sr2CaCu2O8 425
Scanning tunneling microscopy studies of Ge/Si films on Si(111): From layer by layer to quantum dots 424
Morphological instabilities of the InAs/GaAs(001) interface and their effect on the self-assembling of InAs quantum-dot arrays 423
Characterization of real surfaces of superconductor materials by x-ray photoemission and x-ray Auger spectroscopies 423
Morphology of the Fe, Cr and Ge/Bi2Sr2CaCu2O8 reactive interfaces from XPS and STM analyses 422
Pairing in the Hubbard model: the Cu5O4 cluster versus the Cu-O plane 421
Ge growth on vicinal Si(001)surfaces: islands’ shape and pair interaction vs miscut angle 421
Scaling behavior of GaAs and GaMnAs quantum rings grown by droplet epitaxy 421
Irreversible order-disorder transformation of Ge(0 0 1) probed by scanning tunnelling microscopy 421
Electronic relaxation effects on x-ray spectra of titanium and transition-metal carbides and nitrides 420
Observation of interface states by high-resolution electron-energy-loss spectroscopy in metal-GaAs(110) junctions 418
Self-ordering of Ge islands on step-bunched Si(111) surfaces 418
Auger study of the electronic correlations in YBa2Cu3O7-delta 418
Self-assembly of InAs and Si/Ge quantum dots on structured surfaces 417
Canonical transformation of the three-band Hubbard model and hole pairing 416
Topographic and spectroscopic analysis of ethylene adsorption on Si(111)7×7 by STM and STS 415
Ordering of Ge islands on Si(001) substrates patterned by nanoindentation 415
Core-level changes induced by oxygen in YBa2Cu3O7- 414
GaAs detectors for underground physics 414
The entangled role of strain and diffusion in driving the spontaneous formation of atolls and holes in Ge/Si(111) heteroepitaxy 414
In situ X-ray absorption measurements of the Cu/MgO(0 0 1) interface 413
Effects of substrate vicinality on 3D islanding in Ge/Si epitaxy 413
Chapter 29: Semiconductors quantum dots: the model case of Ge/Si system 413
Towards a Controlled Growth of Self-assembled Nanostructures: Shaping, Ordering, and Localization in Ge/Si Heteroepitaxy 411
GeSi intermixing in Ge nanostructures on Si(111): An XAFS versus STM study 407
Microscopic aspects of the Fe/Bi2Sr2CaCu2O8 reactive interface 407
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 407
Ripple-to-dome transition: The growth of Ge on Si(1 1 10) vicinal surface 406
The InAs/GaAs(001) Quantum Dots Transition: Advances on Understanding 406
Bremsstrahlung Isochromat Spectroscopy (BIS)study of Pd clusters on graphite. 404
Comparative study of low temperature growth of InAs and InMnAs quantum dots 404
Orientational phase diagram of the epitaxially strained Si(001): evidence of a singular (105) face 402
The monitoring of 2d-3d transition for InAs/GaAs (001) self-assembled quantum dots by atomic force microscopy 401
EXAFS measurements on Fe-B metallic glasses: asymmetry of the radial distribution function 401
Surface versus bulk contributions from reflectance anisotropy and electron energy loss spectra of the GaAs(001)-c(4x4) surface 400
BIS and XPS investigations of the electronic structure of beta-FeSi2 and Fe/Si (111) interface 400
Hugh-like island growth of Ge on strained vicinal Si(111) surfaces 400
Single quantum dot emission by nanoscale selective growth of InAs on GaAs: A bottom-up approach 398
Towards the ordering of Ge nanoislands on Si(001) surface with misorientation angle 398
Kinetic aspects of the morphology of self-assembled InAs quantum dots on GaAs(001) 396
Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth 396
Totale 45.055
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Categoria #
all - tutte 151.157
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 151.157
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021699 0 0 0 0 0 0 0 0 0 0 493 206
2021/20222.083 51 238 134 165 50 203 75 83 152 175 76 681
2022/20232.383 297 103 36 313 191 602 206 123 174 10 268 60
2023/2024664 96 30 35 8 69 232 9 26 11 16 11 121
2024/20255.893 171 952 440 241 80 102 457 265 370 225 1.499 1.091
2025/20265.429 441 459 660 485 454 185 583 864 761 520 17 0
Totale 70.117