IRIS
BALZAROTTI, ADALBERTO
 Distribuzione geografica
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Continente #
NA - Nord America 52.989
EU - Europa 5.191
AS - Asia 1.914
SA - Sud America 21
Continente sconosciuto - Info sul continente non disponibili 16
OC - Oceania 10
AF - Africa 3
Totale 60.144
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Nazione #
US - Stati Uniti d'America 52.947
UA - Ucraina 1.154
DE - Germania 989
SG - Singapore 896
IE - Irlanda 632
CN - Cina 625
IT - Italia 494
SE - Svezia 454
FR - Francia 343
PL - Polonia 303
GB - Regno Unito 282
FI - Finlandia 234
KR - Corea 222
RU - Federazione Russa 202
JP - Giappone 59
CA - Canada 34
IN - India 27
BE - Belgio 26
UZ - Uzbekistan 24
VN - Vietnam 16
EU - Europa 14
BR - Brasile 13
NL - Olanda 13
CZ - Repubblica Ceca 12
RO - Romania 10
IL - Israele 8
AU - Australia 7
MX - Messico 7
ES - Italia 6
AT - Austria 5
BG - Bulgaria 5
CH - Svizzera 5
CL - Cile 5
KG - Kirghizistan 5
GR - Grecia 4
HK - Hong Kong 4
MY - Malesia 4
PT - Portogallo 4
SA - Arabia Saudita 4
TW - Taiwan 4
IQ - Iraq 3
IR - Iran 3
MD - Moldavia 3
MK - Macedonia 3
NO - Norvegia 3
NZ - Nuova Zelanda 3
TR - Turchia 3
A2 - ???statistics.table.value.countryCode.A2??? 2
DK - Danimarca 2
HU - Ungheria 2
PK - Pakistan 2
TH - Thailandia 2
AE - Emirati Arabi Uniti 1
AR - Argentina 1
BD - Bangladesh 1
DM - Dominica 1
EC - Ecuador 1
EE - Estonia 1
EG - Egitto 1
FK - Isole Falkland (Malvinas) 1
KZ - Kazakistan 1
MA - Marocco 1
SC - Seychelles 1
Totale 60.144
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Città #
Woodbridge 16.274
Wilmington 12.820
Houston 12.294
Ann Arbor 2.055
Fairfield 1.755
Jacksonville 1.091
Ashburn 850
Singapore 791
Seattle 721
Chandler 677
Dublin 632
Cambridge 564
Medford 480
Dearborn 415
Beijing 359
Kraków 302
Santa Clara 228
Lawrence 226
New York 211
Mülheim 207
San Mateo 123
Menlo Park 108
San Diego 90
Rome 88
Boardman 65
University Park 57
Milan 51
Moscow 48
Hefei 39
Saint Petersburg 39
Redwood City 37
Verona 34
Mountain View 31
Norwalk 31
Zhengzhou 31
Nanjing 27
Brussels 26
Guangzhou 23
Falls Church 22
Kunming 21
Los Angeles 19
Nürnberg 18
Toronto 18
London 16
Indiana 15
Auburn Hills 13
Hanoi 13
Helsinki 13
Saint-jérôme 13
Nuremberg 12
Shanghai 12
Brno 11
Hangzhou 11
Donetsk 10
Nanchang 10
Fuzhou 9
Palo Alto 9
Tappahannock 9
San Francisco 8
São Paulo 8
Washington 8
Chengdu 7
Jinan 7
Redmond 7
Bolzano Vicentino 6
Groningen 6
Shenyang 6
Berlin 5
Bologna 5
Hounslow 5
Kilburn 5
Munich 5
Pagani 5
Hebei 4
Leawood 4
Phoenix 4
Trieste 4
Wuhan 4
Yellow Springs 4
Auckland 3
Baotou 3
Chisinau 3
Detroit 3
Hong Kong 3
Kuala Lumpur 3
Makkah 3
Marano Di Napoli 3
Melbourne 3
Modena 3
Mumbai 3
Napoli 3
Nizhniy Novgorod 3
Sheffield 3
Strumica 3
Tainan City 3
Terracina 3
Tokyo 3
Wenzhou 3
Xian 3
Alatri 2
Totale 54.353
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Nome #
Atomi,Molecole e Solidi: Esercizi risolti 539
Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001) 472
Electronic anisotropy of the GaAs(001) surface studied by energy loss spectroscopy 465
XPS and STM study of Mn incorporation on the GaAs(001) surface 455
Real-time scanning tunneling microscopy observation of the evolution of Ge quantum dots on nanopatterned Si(001) surfaces 444
Scaling law and dynamical exponent in the Volmer-Weber growth mode: silver on GaAs(001)2 x 4 437
Shaping Ge islands on Si(001) surfaces with misorientation angle 433
Structural study of the InAs quantum-dot nucleation on GaAs(001) 428
Cluster approach to the three-band Hubbard model of the Cu-O plane: Superconducting pairs 428
Step erosion during nucleation of InAsGaAs (001) quantum dots 427
EXAFS study of the [BaCuO2](2)/[(Ca,Sr)CuO2](n) artificial superconducting superlattices 426
X-ray-photoemission-spectroscopy study of the surface deterioration of Bi2Sr2CaCu2O8 and Bi1.7Pb0.3Sr2CaCu2O8 single crystals at 26 K 423
Size-dependent reversal of the elastic interaction energy between misfit nanostructures 422
Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy 421
Etch pits and tunnel barrier in chemically etched YBa2Cu3O7-[delta] crystals by scanning tunneling microscopy 416
Growth of ultrahigh-density quantum-confined germanium dots on SiO 2 thin films 415
The Unexpected Role of Arsenic in Driving the Selective Growth of InAs Quantum Dots on GaAs 415
2D Voronoi tessellation generated by lines and belts of dots 415
Dynamic behavior of silver islands growing on GaAs(001)2X4 substrate 414
Beneficial defects: Exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires 413
XAS study of (BaCuO2)(2)/(CaCuO2)(n) superlattices 411
Valence band and In-4d core level photoemission study of de-capped and ion-bombarded-annealed InAs(001) epitaxial surfaces 408
Selective growth of InAs quantum dots on SiO2-masked GaAs 408
Self-assembly of Ge quantum dots on Silicon:An example of controlled nanomanufacturing 408
Electronic correlations in YBa2Cu3O7-delta from Auger spectroscopy 407
Canonical transformation of the Hubbard model and W=0 pairing: Comparison with exact diagonalization results 406
Inx Ga(1-x)As quantum dots grown on GaAs studied by EXAFS in total reflection mode (ReflEXAFS) 406
The GaAS(001)-c(4x4) surface: a new perspective from energy loss spectra 406
Morphology of self-assembled InAs quantum dots on GaAs(001) 406
Correlation effects on the L3VV Auger line shape of Cd1-xMnxTe 404
Electron energy loss study of Ag- and Au-GaAs(110) interfaces 403
A study of the pair distribution function of self-organized Ge quantum dots 402
The influence of the wetting layer morphology on the nucleation and the evolution of InAs/GaAs (001) Quantum Dots 401
MgO(100) structural investigations using EELFS and EXFAS techniques 400
Heteroepitaxy of Ge on singular and vicinal Si surfaces: Elastic field symmetry and nanostructure growth 400
Electronic relaxation effects on x-ray spectra of titanium and transition-metal carbides and nitrides 396
Breaking elastic field symmetry in the Ge/Si(001) growth with substrate vicinality 396
Irreversible order-disorder transformation of Ge(0 0 1) probed by scanning tunnelling microscopy 396
EXAFS spectroscopy of amorphous Fe-Ni steels 395
W = 0 pairing in Hubbard and related models of low-dimensional superconductors 394
Palladium clusters on graphite: a Bremsstrahlung Isochromat Spectroscopy study 394
InAs/GaAs(001) epitaxy: Kinetic effects in the two-dimensional to three-dimensional transition 393
The entangled role of strain and diffusion in driving the spontaneous formation of atolls and holes in Ge/Si(111) heteroepitaxy 393
Morphology of the Fe, Cr and Ge/Bi2Sr2CaCu2O8 reactive interfaces from XPS and STM analyses 392
Characterization of beta-FeSi2 and the Fe/Si(111) interface by electronic spectroscopies 392
Coarsening effect on island-size scaling: The model case InAs/GaAs(001) 391
Morphological instabilities of the InAs/GaAs(001) interface and their effect on the self-assembling of InAs quantum-dot arrays 390
Modelling of the reactive interface formation on Bi2Sr2CaCu2O8 390
In situ X-ray absorption measurements of the Cu/MgO(0 0 1) interface 390
Observation of interface states by high-resolution electron-energy-loss spectroscopy in metal-GaAs(110) junctions 389
Pairing in the Hubbard model: the Cu5O4 cluster versus the Cu-O plane 389
Effects of substrate vicinality on 3D islanding in Ge/Si epitaxy 389
Topographic and spectroscopic analysis of ethylene adsorption on Si(111)7×7 by STM and STS 388
Self-ordering of Ge islands on step-bunched Si(111) surfaces 388
How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs/GaAs(001) 388
"W=0" pairing in Cu-O clusters and in the plane 388
Anisotropy of the GaAs(001)-beta 2(2x4) surface from high-resolution electron energy loss spectroscopy 387
Atomic Force microscopy analyses of InAs/GaAs heterostructures grown by MBE 387
Role of patterning in islands nucleation on semiconductor surfaces 386
Adsorption of molecular oxygen on GaAs(001) studied using high-resolution electron energy-loss spectroscopy 386
Comparative study of Ag growth on GaAs(001) and (110) surfaces 385
Multiple scattering effects in the EXAFS of Fe and TiFe 384
Core level spectroscopy in YBa2Cu3O7-delta: Electronic structure versus oxygen stoichiometry 384
Ordering of Ge islands on Si(001) substrates patterned by nanoindentation 383
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 383
Ge growth on vicinal Si(001)surfaces: islands’ shape and pair interaction vs miscut angle 382
Ripple-to-dome transition: The growth of Ge on Si(1 1 10) vicinal surface 382
GaAs detectors for underground physics 382
GeSi intermixing in Ge nanostructures on Si(111): An XAFS versus STM study 381
Scanning tunneling microscopy studies of Ge/Si films on Si(111): From layer by layer to quantum dots 380
Characterization of real surfaces of superconductor materials by x-ray photoemission and x-ray Auger spectroscopies 380
Valence charge fluctuations in YBa2Cu3O7-delta from core level spectroscopies 379
The InAs/GaAs(001) Quantum Dots Transition: Advances on Understanding 377
Scaling behavior of GaAs and GaMnAs quantum rings grown by droplet epitaxy 377
Self-assembly of InAs and Si/Ge quantum dots on structured surfaces 376
Towards a Controlled Growth of Self-assembled Nanostructures: Shaping, Ordering, and Localization in Ge/Si Heteroepitaxy 375
Canonical transformation of the three-band Hubbard model and hole pairing 373
Single quantum dot emission by nanoscale selective growth of InAs on GaAs: A bottom-up approach 373
Microscopic aspects of the Fe/Bi2Sr2CaCu2O8 reactive interface 373
Core-level changes induced by oxygen in YBa2Cu3O7- 372
Effects of the asymmetry on the radial distribution function in the EXAFS of metallic glasses 372
Orientational phase diagram of the epitaxially strained Si(001): evidence of a singular (105) face 370
Surface versus bulk contributions from reflectance anisotropy and electron energy loss spectra of the GaAs(001)-c(4x4) surface 369
Kinetic aspects of the morphology of self-assembled InAs quantum dots on GaAs(001) 369
Angular dependence of the oxygen K-edge fine structure in electron-energy loss spectra of Bi2-xPbxSr2CaCu2O8 369
EXAFS measurements on Fe-B metallic glasses: asymmetry of the radial distribution function 369
Interface formation between d metals and the Bi2Sr2CaCu2O8 surface 369
Theory of pairing in the Cu-O plane: Three-band hubbard model and beyond 368
Hugh-like island growth of Ge on strained vicinal Si(111) surfaces 367
Auger study of the electronic correlations in YBa2Cu3O7-delta 365
Towards the ordering of Ge nanoislands on Si(001) surface with misorientation angle 364
Structural and electronic properties of Fe and TiFe from extended and near-edge x-ray absorption structure 364
Chapter 29: Semiconductors quantum dots: the model case of Ge/Si system 364
Electronic structure of epitaxial beta-FeSi2 on Si (111) 363
Probing the electronic properties of As-rich reconstructed surfaces of GaAs(001) by Electron Energy Loss Spectroscopy 363
Step-step interaction on vicinal Si(001) surfaces studied by scanning tunneling microscopy 362
Comparative study of low temperature growth of InAs and InMnAs quantum dots 362
Hole pairing in hight-Tc superconductors 361
Morphological and electronic characterization of functionalized graphene nanoribbons obtained by the unzipping of single-wall carbon nanotubes: a scanning tunneling microscopy study 361
Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth 360
Totale 39.443
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Categoria #
all - tutte 112.222
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 112.222
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202011.975 0 0 0 1.525 1.306 1.781 1.350 1.477 1.275 1.235 910 1.116
2020/20218.608 888 1.121 868 1.148 764 862 1.090 669 348 151 493 206
2021/20222.083 51 238 134 165 50 203 75 83 152 175 76 681
2022/20232.383 297 103 36 313 191 602 206 123 174 10 268 60
2023/2024664 96 30 35 8 69 232 9 26 11 16 11 121
2024/20251.570 171 952 440 7 0 0 0 0 0 0 0 0
Totale 60.365