IRIS
BALZAROTTI, ADALBERTO
 Distribuzione geografica
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Continente #
NA - Nord America 58.013
AS - Asia 7.634
EU - Europa 6.287
SA - Sud America 945
Continente sconosciuto - Info sul continente non disponibili 239
AF - Africa 72
OC - Oceania 18
Totale 73.208
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Nazione #
US - Stati Uniti d'America 57.760
SG - Singapore 4.534
CN - Cina 1.235
UA - Ucraina 1.166
DE - Germania 1.053
BR - Brasile 798
RU - Federazione Russa 772
IT - Italia 660
IE - Irlanda 634
HK - Hong Kong 606
SE - Svezia 463
VN - Vietnam 429
FR - Francia 404
GB - Regno Unito 351
PL - Polonia 325
FI - Finlandia 274
KR - Corea 228
JP - Giappone 206
CA - Canada 137
BD - Bangladesh 93
IN - India 74
AR - Argentina 48
UZ - Uzbekistan 37
MX - Messico 31
NL - Olanda 31
BE - Belgio 30
EC - Ecuador 29
IQ - Iraq 26
ES - Italia 24
CO - Colombia 21
ID - Indonesia 21
JM - Giamaica 21
ZA - Sudafrica 21
CR - Costa Rica 17
TR - Turchia 17
CL - Cile 15
RO - Romania 15
EU - Europa 14
MY - Malesia 14
PK - Pakistan 14
AU - Australia 13
PH - Filippine 13
CZ - Repubblica Ceca 12
IL - Israele 12
AT - Austria 11
SA - Arabia Saudita 11
KE - Kenya 9
PE - Perù 9
VE - Venezuela 9
EG - Egitto 8
HN - Honduras 8
KZ - Kazakistan 8
TT - Trinidad e Tobago 8
BG - Bulgaria 7
KG - Kirghizistan 7
LT - Lituania 7
MA - Marocco 7
NI - Nicaragua 7
PT - Portogallo 7
TH - Thailandia 7
TW - Taiwan 7
AE - Emirati Arabi Uniti 6
BO - Bolivia 6
CH - Svizzera 6
DK - Danimarca 6
GR - Grecia 6
PY - Paraguay 6
GT - Guatemala 5
NZ - Nuova Zelanda 5
TN - Tunisia 5
DO - Repubblica Dominicana 4
ET - Etiopia 4
IR - Iran 4
MD - Moldavia 4
SC - Seychelles 4
BB - Barbados 3
DZ - Algeria 3
EE - Estonia 3
JO - Giordania 3
KW - Kuwait 3
LB - Libano 3
MK - Macedonia 3
NO - Norvegia 3
NP - Nepal 3
OM - Oman 3
SV - El Salvador 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AL - Albania 2
AZ - Azerbaigian 2
BS - Bahamas 2
HR - Croazia 2
HU - Ungheria 2
LA - Repubblica Popolare Democratica del Laos 2
NG - Nigeria 2
PR - Porto Rico 2
SN - Senegal 2
UY - Uruguay 2
XK - ???statistics.table.value.countryCode.XK??? 2
AM - Armenia 1
BF - Burkina Faso 1
Totale 72.965
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Città #
Woodbridge 16.274
Wilmington 12.822
Houston 12.305
Ann Arbor 2.055
Fairfield 1.755
Ashburn 1.665
Singapore 1.376
Jacksonville 1.096
San Jose 902
Seattle 727
Chandler 677
Dublin 635
Hong Kong 597
Cambridge 566
Beijing 543
Medford 480
Dearborn 415
Council Bluffs 343
Kraków 302
New York 284
Santa Clara 275
The Dalles 230
Lawrence 227
Mülheim 207
Los Angeles 177
Tokyo 144
Buffalo 136
Ho Chi Minh City 131
San Mateo 125
Rome 115
Hanoi 113
Menlo Park 108
São Paulo 99
Moscow 98
San Diego 91
Milan 69
Boardman 65
Dallas 63
University Park 57
Chicago 48
Hefei 40
Helsinki 40
Saint Petersburg 39
Redwood City 37
Guangzhou 36
Munich 35
Toronto 35
Denver 34
Verona 34
Zhengzhou 34
Norwalk 32
Mountain View 31
Brussels 30
Phoenix 30
Rio de Janeiro 30
Nanjing 29
Atlanta 28
Lauterbourg 25
London 25
Falls Church 22
Kunming 22
Montreal 22
San Francisco 21
Brasília 19
Las Vegas 18
Nürnberg 18
Naples 17
Nuremberg 17
Warsaw 17
Brooklyn 16
Orem 16
Da Nang 15
Indiana 15
Washington 15
Hangzhou 14
Shanghai 14
Auburn Hills 13
Belo Horizonte 13
Kingston 13
Miami 13
Porto Alegre 13
Saint-jérôme 13
Salvador 13
Turku 13
Chennai 12
Frankfurt am Main 12
Haiphong 12
Redondo Beach 12
San José 12
Brno 11
Nanchang 11
Philadelphia 11
Amsterdam 10
Baghdad 10
Curitiba 10
Donetsk 10
Fuzhou 10
Guayaquil 10
North Bergen 10
Quito 10
Totale 59.596
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Nome #
Size-dependent reversal of the elastic interaction energy between misfit nanostructures 630
The Unexpected Role of Arsenic in Driving the Selective Growth of InAs Quantum Dots on GaAs 617
Atomi,Molecole e Solidi: Esercizi risolti 614
Palladium clusters on graphite: a Bremsstrahlung Isochromat Spectroscopy study 596
EXAFS spectroscopy of amorphous Fe-Ni steels 590
Valence charge fluctuations in YBa2Cu3O7-delta from core level spectroscopies 583
Hole pairing in hight-Tc superconductors 575
Effects of the asymmetry on the radial distribution function in the EXAFS of metallic glasses 574
Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001) 570
Multiple scattering effects in the EXAFS of Fe and TiFe 569
Theory of pairing in the Cu-O plane: Three-band hubbard model and beyond 568
Structural and electronic properties of Fe and TiFe from extended and near-edge x-ray absorption structure 567
Interface formation between d metals and the Bi2Sr2CaCu2O8 surface 565
Probing the electronic properties of As-rich reconstructed surfaces of GaAs(001) by Electron Energy Loss Spectroscopy 551
2D Voronoi tessellation generated by lines and belts of dots 530
XPS and STM study of Mn incorporation on the GaAs(001) surface 500
Electronic anisotropy of the GaAs(001) surface studied by energy loss spectroscopy 494
Scaling law and dynamical exponent in the Volmer-Weber growth mode: silver on GaAs(001)2 x 4 491
Beneficial defects: Exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires 487
Cluster approach to the three-band Hubbard model of the Cu-O plane: Superconducting pairs 486
Shaping Ge islands on Si(001) surfaces with misorientation angle 485
Structural study of the InAs quantum-dot nucleation on GaAs(001) 484
Step erosion during nucleation of InAsGaAs (001) quantum dots 481
Real-time scanning tunneling microscopy observation of the evolution of Ge quantum dots on nanopatterned Si(001) surfaces 478
Anisotropy of the GaAs(001)-beta 2(2x4) surface from high-resolution electron energy loss spectroscopy 475
Canonical transformation of the Hubbard model and W=0 pairing: Comparison with exact diagonalization results 475
EXAFS study of the [BaCuO2](2)/[(Ca,Sr)CuO2](n) artificial superconducting superlattices 475
X-ray-photoemission-spectroscopy study of the surface deterioration of Bi2Sr2CaCu2O8 and Bi1.7Pb0.3Sr2CaCu2O8 single crystals at 26 K 475
Characterization of beta-FeSi2 and the Fe/Si(111) interface by electronic spectroscopies 473
Growth of ultrahigh-density quantum-confined germanium dots on SiO 2 thin films 471
Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy 470
Self-assembly of Ge quantum dots on Silicon:An example of controlled nanomanufacturing 468
Valence band and In-4d core level photoemission study of de-capped and ion-bombarded-annealed InAs(001) epitaxial surfaces 467
Breaking elastic field symmetry in the Ge/Si(001) growth with substrate vicinality 467
Adsorption of molecular oxygen on GaAs(001) studied using high-resolution electron energy-loss spectroscopy 466
A study of the pair distribution function of self-organized Ge quantum dots 465
Electronic correlations in YBa2Cu3O7-delta from Auger spectroscopy 464
Coarsening effect on island-size scaling: The model case InAs/GaAs(001) 463
Dynamic behavior of silver islands growing on GaAs(001)2X4 substrate 459
XAS study of (BaCuO2)(2)/(CaCuO2)(n) superlattices 457
Core level spectroscopy in YBa2Cu3O7-delta: Electronic structure versus oxygen stoichiometry 457
"W=0" pairing in Cu-O clusters and in the plane 455
Etch pits and tunnel barrier in chemically etched YBa2Cu3O7-[delta] crystals by scanning tunneling microscopy 454
Atomic Force microscopy analyses of InAs/GaAs heterostructures grown by MBE 454
The GaAS(001)-c(4x4) surface: a new perspective from energy loss spectra 453
W = 0 pairing in Hubbard and related models of low-dimensional superconductors 452
Comparative study of Ag growth on GaAs(001) and (110) surfaces 451
Selective growth of InAs quantum dots on SiO2-masked GaAs 448
Heteroepitaxy of Ge on singular and vicinal Si surfaces: Elastic field symmetry and nanostructure growth 448
InAs/GaAs(001) epitaxy: Kinetic effects in the two-dimensional to three-dimensional transition 447
Correlation effects on the L3VV Auger line shape of Cd1-xMnxTe 447
Morphology of self-assembled InAs quantum dots on GaAs(001) 447
How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs/GaAs(001) 447
BIS and XPS investigations of the electronic structure of beta-FeSi2 and Fe/Si (111) interface 445
MgO(100) structural investigations using EELFS and EXFAS techniques 445
Angular dependence of the oxygen K-edge fine structure in electron-energy loss spectra of Bi2-xPbxSr2CaCu2O8 444
Inx Ga(1-x)As quantum dots grown on GaAs studied by EXAFS in total reflection mode (ReflEXAFS) 442
Characterization of real surfaces of superconductor materials by x-ray photoemission and x-ray Auger spectroscopies 440
Scanning tunneling microscopy studies of Ge/Si films on Si(111): From layer by layer to quantum dots 439
Morphological instabilities of the InAs/GaAs(001) interface and their effect on the self-assembling of InAs quantum-dot arrays 439
Electron energy loss study of Ag- and Au-GaAs(110) interfaces 438
GaAs detectors for underground physics 437
The influence of the wetting layer morphology on the nucleation and the evolution of InAs/GaAs (001) Quantum Dots 436
Modelling of the reactive interface formation on Bi2Sr2CaCu2O8 436
Scaling behavior of GaAs and GaMnAs quantum rings grown by droplet epitaxy 436
Role of patterning in islands nucleation on semiconductor surfaces 435
Self-assembly of InAs and Si/Ge quantum dots on structured surfaces 435
Towards the ordering of Ge nanoislands on Si(001) surface with misorientation angle 435
Chapter 29: Semiconductors quantum dots: the model case of Ge/Si system 435
Ge growth on vicinal Si(001)surfaces: islands’ shape and pair interaction vs miscut angle 434
Pairing in the Hubbard model: the Cu5O4 cluster versus the Cu-O plane 433
Bremsstrahlung Isochromat Spectroscopy (BIS)study of Pd clusters on graphite. 432
Effects of substrate vicinality on 3D islanding in Ge/Si epitaxy 432
Irreversible order-disorder transformation of Ge(0 0 1) probed by scanning tunnelling microscopy 431
GeSi intermixing in Ge nanostructures on Si(111): An XAFS versus STM study 430
Morphology of the Fe, Cr and Ge/Bi2Sr2CaCu2O8 reactive interfaces from XPS and STM analyses 430
Auger study of the electronic correlations in YBa2Cu3O7-delta 429
Surface versus bulk contributions from reflectance anisotropy and electron energy loss spectra of the GaAs(001)-c(4x4) surface 428
Self-ordering of Ge islands on step-bunched Si(111) surfaces 428
Electronic relaxation effects on x-ray spectra of titanium and transition-metal carbides and nitrides 428
Towards a Controlled Growth of Self-assembled Nanostructures: Shaping, Ordering, and Localization in Ge/Si Heteroepitaxy 428
The entangled role of strain and diffusion in driving the spontaneous formation of atolls and holes in Ge/Si(111) heteroepitaxy 428
Observation of interface states by high-resolution electron-energy-loss spectroscopy in metal-GaAs(110) junctions 427
Core-level changes induced by oxygen in YBa2Cu3O7- 427
Topographic and spectroscopic analysis of ethylene adsorption on Si(111)7×7 by STM and STS 426
Canonical transformation of the three-band Hubbard model and hole pairing 426
Ordering of Ge islands on Si(001) substrates patterned by nanoindentation 426
In situ X-ray absorption measurements of the Cu/MgO(0 0 1) interface 423
Electronic structure of epitaxial beta-FeSi2 on Si (111) 423
Ripple-to-dome transition: The growth of Ge on Si(1 1 10) vicinal surface 419
Comparative study of low temperature growth of InAs and InMnAs quantum dots 419
The InAs/GaAs(001) Quantum Dots Transition: Advances on Understanding 418
Hugh-like island growth of Ge on strained vicinal Si(111) surfaces 417
Microscopic aspects of the Fe/Bi2Sr2CaCu2O8 reactive interface 416
The monitoring of 2d-3d transition for InAs/GaAs (001) self-assembled quantum dots by atomic force microscopy 415
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 415
High Tc-superconductor surface and interfaces by XPS and STM spectroscopies 414
Single quantum dot emission by nanoscale selective growth of InAs on GaAs: A bottom-up approach 411
Orientational phase diagram of the epitaxially strained Si(001): evidence of a singular (105) face 411
Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth 409
Totale 46.585
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Categoria #
all - tutte 166.124
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 166.124
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.660 0 0 0 165 50 203 75 83 152 175 76 681
2022/20232.383 297 103 36 313 191 602 206 123 174 10 268 60
2023/2024664 96 30 35 8 69 232 9 26 11 16 11 121
2024/20255.893 171 952 440 241 80 102 457 265 370 225 1.499 1.091
2025/20265.858 441 459 660 485 454 185 583 864 761 520 235 211
2026/20272.662 199 395 1.353 715 0 0 0 0 0 0 0 0
Totale 73.208