The transition from the liquid phase of Ga droplets to the formation of GaAs and GaMnAs quantum rings has been studied as a function of temperature. We show that different aggregation processes involve the GaAs (GaMnAs) island and the droplet formation. Furthermore, the aspect ratio of the islands exhibits an anomalous scaling law related to a tendency to aggregate in the vertical direction.
Placidi, E., Arciprete, F., Balzarotti, A., Patella, F. (2012). Scaling behavior of GaAs and GaMnAs quantum rings grown by droplet epitaxy. APPLIED PHYSICS LETTERS, 101(14), 141901-141903 [10.1063/1.4756896].
Scaling behavior of GaAs and GaMnAs quantum rings grown by droplet epitaxy
ARCIPRETE, FABRIZIO;BALZAROTTI, ADALBERTO;PATELLA, FULVIA
2012-10-01
Abstract
The transition from the liquid phase of Ga droplets to the formation of GaAs and GaMnAs quantum rings has been studied as a function of temperature. We show that different aggregation processes involve the GaAs (GaMnAs) island and the droplet formation. Furthermore, the aspect ratio of the islands exhibits an anomalous scaling law related to a tendency to aggregate in the vertical direction.File in questo prodotto:
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