The (4 x 2) epitaxial InAs(001) surface grown by molecular beam epitaxy and subjected to different surface treatments, namely amorphous As-de-capping and ion-bombardment annealing (IBA), is investigated by high-resolution angular-resolved UV photoelectron spectroscopy. Both treatments produce a semiconducting surface, ruling out the presence of metallic In aggregates. Binding energy shifts of 0.2-0.3 eV are measured for the valence-band levels of the IBA surface with respect to the de-capped surface, implying an important influence of the surface treatment on the subsurface region. The line-shape of the In-4d core levels, which consists of two different In-related surface doublets, is discussed in view of the recently proposed structural models based on dimers formation. (C) 2004 Elsevier B.V. All rights reserved.
Aureli, I., Corradini, V., Mariani, C., Placidi, E., Arciprete, F., Balzarotti, A. (2005). Valence band and In-4d core level photoemission study of de-capped and ion-bombarded-annealed InAs(001) epitaxial surfaces. SURFACE SCIENCE, 576, 123-130 [10.1016/j.susc.2004.12.004].
Valence band and In-4d core level photoemission study of de-capped and ion-bombarded-annealed InAs(001) epitaxial surfaces
ARCIPRETE, FABRIZIO;BALZAROTTI, ADALBERTO
2005-01-01
Abstract
The (4 x 2) epitaxial InAs(001) surface grown by molecular beam epitaxy and subjected to different surface treatments, namely amorphous As-de-capping and ion-bombardment annealing (IBA), is investigated by high-resolution angular-resolved UV photoelectron spectroscopy. Both treatments produce a semiconducting surface, ruling out the presence of metallic In aggregates. Binding energy shifts of 0.2-0.3 eV are measured for the valence-band levels of the IBA surface with respect to the de-capped surface, implying an important influence of the surface treatment on the subsurface region. The line-shape of the In-4d core levels, which consists of two different In-related surface doublets, is discussed in view of the recently proposed structural models based on dimers formation. (C) 2004 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
