InxGa(1-x)As quantum dots grown on GaAs were studied by extended X-ray absorption fine structure in total reflection geometry (ReflEXAFS). By comparing theoretical models to experimental data on first shell bond lengths, it was possible to recognize the strained or relaxed state of the dots and their composition. The results showed that the wetting layer (WL) was a strained diluted alloy.
D'Acapito, F., Colonna, S., Arciprete, F., Balzarotti, A., Davoli, I., Patella, F., et al. (2003). Inx Ga(1-x)As quantum dots grown on GaAs studied by EXAFS in total reflection mode (ReflEXAFS). In Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms (pp.85-89).
Autori: | |
Autori: | D'Acapito, F ; Colonna, S ; Arciprete, F ; Balzarotti, A ; Davoli, I ; Patella, F ; Mobilio, S |
Titolo: | Inx Ga(1-x)As quantum dots grown on GaAs studied by EXAFS in total reflection mode (ReflEXAFS) |
Nome del convegno: | Spring Meeting of the European-Materials-Research-Society (E-MRS) |
Luogo del convegno: | STRASBOURG, FRANCE |
Anno del convegno: | JUN 18-21, 2002 |
Enti collegati al convegno: | European Mat Res Soc |
Rilevanza: | Rilevanza internazionale |
Sezione: | contributo |
Data di pubblicazione: | 2003 |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1016/S0168-583X(02)01679-8 |
Settore Scientifico Disciplinare: | Settore FIS/03 - Fisica della Materia |
Lingua: | English |
Tipologia: | Intervento a convegno |
Citazione: | D'Acapito, F., Colonna, S., Arciprete, F., Balzarotti, A., Davoli, I., Patella, F., et al. (2003). Inx Ga(1-x)As quantum dots grown on GaAs studied by EXAFS in total reflection mode (ReflEXAFS). In Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms (pp.85-89). |
Appare nelle tipologie: | 02 - Intervento a convegno |