IRIS
PATELLA, FULVIA
 Distribuzione geografica
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Continente #
NA - Nord America 33.240
AS - Asia 3.287
EU - Europa 2.677
SA - Sud America 354
Continente sconosciuto - Info sul continente non disponibili 176
AF - Africa 33
OC - Oceania 5
Totale 39.772
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Nazione #
US - Stati Uniti d'America 33.142
SG - Singapore 1.972
CN - Cina 539
DE - Germania 489
UA - Ucraina 489
RU - Federazione Russa 347
BR - Brasile 307
IE - Irlanda 299
IT - Italia 291
HK - Hong Kong 221
SE - Svezia 210
VN - Vietnam 183
GB - Regno Unito 176
FR - Francia 130
FI - Finlandia 116
JP - Giappone 99
KR - Corea 93
CA - Canada 67
BD - Bangladesh 54
IN - India 33
PL - Polonia 30
BE - Belgio 18
UZ - Uzbekistan 18
ES - Italia 15
NL - Olanda 14
AR - Argentina 12
IQ - Iraq 12
CZ - Repubblica Ceca 11
ZA - Sudafrica 11
EC - Ecuador 10
TR - Turchia 9
JM - Giamaica 8
MX - Messico 8
AT - Austria 7
MY - Malesia 7
RO - Romania 7
CO - Colombia 6
SA - Arabia Saudita 6
CL - Cile 5
IL - Israele 5
KG - Kirghizistan 5
KZ - Kazakistan 5
MD - Moldavia 5
VE - Venezuela 5
EG - Egitto 4
EU - Europa 4
KE - Kenya 4
PH - Filippine 4
PT - Portogallo 4
AU - Australia 3
CH - Svizzera 3
DK - Danimarca 3
GR - Grecia 3
ID - Indonesia 3
IR - Iran 3
PE - Perù 3
PK - Pakistan 3
SV - El Salvador 3
TN - Tunisia 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AE - Emirati Arabi Uniti 2
BB - Barbados 2
BO - Bolivia 2
CI - Costa d'Avorio 2
DM - Dominica 2
DO - Repubblica Dominicana 2
DZ - Algeria 2
HR - Croazia 2
LB - Libano 2
LT - Lituania 2
MA - Marocco 2
NZ - Nuova Zelanda 2
PR - Porto Rico 2
PY - Paraguay 2
TH - Thailandia 2
TT - Trinidad e Tobago 2
UY - Uruguay 2
AL - Albania 1
AM - Armenia 1
BY - Bielorussia 1
CR - Costa Rica 1
CY - Cipro 1
EE - Estonia 1
ET - Etiopia 1
GT - Guatemala 1
HU - Ungheria 1
JO - Giordania 1
KW - Kuwait 1
LU - Lussemburgo 1
MU - Mauritius 1
NG - Nigeria 1
NO - Norvegia 1
NP - Nepal 1
SD - Sudan 1
SN - Senegal 1
SY - Repubblica araba siriana 1
TW - Taiwan 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 39.603
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Città #
Woodbridge 10.398
Wilmington 8.662
Houston 7.380
Ann Arbor 882
Fairfield 780
Singapore 695
Ashburn 515
Jacksonville 454
Chandler 452
San Jose 335
Seattle 324
Dublin 270
Cambridge 262
Beijing 255
Hong Kong 216
Medford 200
Dearborn 177
New York 160
Council Bluffs 155
Santa Clara 138
The Dalles 108
Lawrence 93
Mülheim 85
Los Angeles 70
Tokyo 66
Rome 61
Ho Chi Minh City 53
Menlo Park 51
Buffalo 50
Moscow 49
San Mateo 48
Hanoi 44
Boardman 43
San Diego 43
Milan 38
São Paulo 36
University Park 27
Dallas 26
Hangzhou 24
Helsinki 21
Mountain View 20
Toronto 20
Norwalk 19
Brussels 18
Guangzhou 18
Munich 18
London 17
Hefei 16
Kraków 16
Atlanta 15
Redwood City 15
Verona 15
Lauterbourg 14
Washington 14
Chicago 13
Saint-jérôme 13
Nanjing 12
Saint Petersburg 12
Brno 11
Indiana 11
Orem 11
Zhengzhou 11
Warsaw 10
Falls Church 9
Redondo Beach 9
Auburn Hills 8
Frankfurt am Main 8
San Francisco 8
Tappahannock 8
Campinas 7
Dhaka 7
Nanchang 7
Palo Alto 7
Phoenix 7
Porto Alegre 7
Rio de Janeiro 7
Baghdad 6
Belo Horizonte 6
Da Nang 6
Haiphong 6
Nürnberg 6
Stockholm 6
Vienna 6
Amsterdam 5
Brooklyn 5
Curitiba 5
Elk Grove Village 5
Johannesburg 5
Kingston 5
Miami 5
Montreal 5
Poplar 5
Redmond 5
Salvador 5
Shenyang 5
Tashkent 5
Turku 5
Vancouver 5
Bolzano Vicentino 4
Brantford 4
Totale 34.309
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Nome #
The Unexpected Role of Arsenic in Driving the Selective Growth of InAs Quantum Dots on GaAs 606
Palladium clusters on graphite: a Bremsstrahlung Isochromat Spectroscopy study 590
Valence charge fluctuations in YBa2Cu3O7-delta from core level spectroscopies 573
Interface formation between d metals and the Bi2Sr2CaCu2O8 surface 563
Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001) 550
Probing the electronic properties of As-rich reconstructed surfaces of GaAs(001) by Electron Energy Loss Spectroscopy 543
2D Voronoi tessellation generated by lines and belts of dots 515
Electronic anisotropy of the GaAs(001) surface studied by energy loss spectroscopy 492
XPS and STM study of Mn incorporation on the GaAs(001) surface 487
Scaling law and dynamical exponent in the Volmer-Weber growth mode: silver on GaAs(001)2 x 4 475
Structural study of the InAs quantum-dot nucleation on GaAs(001) 471
Step erosion during nucleation of InAsGaAs (001) quantum dots 471
Anisotropy of the GaAs(001)-beta 2(2x4) surface from high-resolution electron energy loss spectroscopy 461
X-ray-photoemission-spectroscopy study of the surface deterioration of Bi2Sr2CaCu2O8 and Bi1.7Pb0.3Sr2CaCu2O8 single crystals at 26 K 461
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 459
Coarsening effect on island-size scaling: The model case InAs/GaAs(001) 458
Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy 457
Adsorption of molecular oxygen on GaAs(001) studied using high-resolution electron energy-loss spectroscopy 454
Electronic correlations in YBa2Cu3O7-delta from Auger spectroscopy 454
Etch pits and tunnel barrier in chemically etched YBa2Cu3O7-[delta] crystals by scanning tunneling microscopy 449
Dynamic behavior of silver islands growing on GaAs(001)2X4 substrate 449
The GaAS(001)-c(4x4) surface: a new perspective from energy loss spectra 443
Selective growth of InAs quantum dots on SiO2-masked GaAs 443
Comparative study of Ag growth on GaAs(001) and (110) surfaces 441
InAs/GaAs(001) epitaxy: Kinetic effects in the two-dimensional to three-dimensional transition 440
Correlation effects on the L3VV Auger line shape of Cd1-xMnxTe 440
Core level spectroscopy in YBa2Cu3O7-delta: Electronic structure versus oxygen stoichiometry 440
Characterization of beta-FeSi2 and the Fe/Si(111) interface by electronic spectroscopies 439
Anisotropic cation diffusion in the GaAs capping of InAs/GaAs(001) quantum dots 437
Amorphous Si/Ge heterojunctions: Band discontinuities and local order studied by photoemission spectroscopy 436
Morphology of self-assembled InAs quantum dots on GaAs(001) 435
Angular dependence of the oxygen K-edge fine structure in electron-energy loss spectra of Bi2-xPbxSr2CaCu2O8 434
I fenomeni fisici e chimici irreversibili: La diffusione 434
Electron energy loss study of Ag- and Au-GaAs(110) interfaces 433
How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs/GaAs(001) 433
Local order in silicon - germanium alloys and at silicon - germanium heterojunctions by analysis of Ge 3d core levels 433
Inx Ga(1-x)As quantum dots grown on GaAs studied by EXAFS in total reflection mode (ReflEXAFS) 432
Role of patterning in islands nucleation on semiconductor surfaces 429
The influence of the wetting layer morphology on the nucleation and the evolution of InAs/GaAs (001) Quantum Dots 429
MgO(100) structural investigations using EELFS and EXFAS techniques 429
Scaling behavior of GaAs and GaMnAs quantum rings grown by droplet epitaxy 429
Morphological instabilities of the InAs/GaAs(001) interface and their effect on the self-assembling of InAs quantum-dot arrays 428
Modelling of the reactive interface formation on Bi2Sr2CaCu2O8 428
Morphology of the Fe, Cr and Ge/Bi2Sr2CaCu2O8 reactive interfaces from XPS and STM analyses 426
Characterization of real surfaces of superconductor materials by x-ray photoemission and x-ray Auger spectroscopies 425
Core excitons in amorphous semiconductors 424
Observation of interface states by high-resolution electron-energy-loss spectroscopy in metal-GaAs(110) junctions 422
Auger study of the electronic correlations in YBa2Cu3O7-delta 421
Single QD emission from arrays of QD chains obtained by patterning-free method 421
Self-assembly of InAs and Si/Ge quantum dots on structured surfaces 420
Core-level changes induced by oxygen in YBa2Cu3O7- 416
Surface versus bulk contributions from reflectance anisotropy and electron energy loss spectra of the GaAs(001)-c(4x4) surface 411
Microscopic aspects of the Fe/Bi2Sr2CaCu2O8 reactive interface 411
Comparative study of low temperature growth of InAs and InMnAs quantum dots 410
The InAs/GaAs(001) Quantum Dots Transition: Advances on Understanding 410
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 410
The monitoring of 2d-3d transition for InAs/GaAs (001) self-assembled quantum dots by atomic force microscopy 407
Bremsstrahlung Isochromat Spectroscopy (BIS)study of Pd clusters on graphite. 407
Kinetically Driven Selective Growth of InAs Quantum Dots on GaAs 407
BIS and XPS investigations of the electronic structure of beta-FeSi2 and Fe/Si (111) interface 403
Detection of hydrogen induced Schottky barrier modulation in Pd/SiO x/a-Si:H diodes by photoemission with synchrotron radiation 402
Single quantum dot emission by nanoscale selective growth of InAs on GaAs: A bottom-up approach 401
Kinetic aspects of the morphology of self-assembled InAs quantum dots on GaAs(001) 400
Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth 399
Selective Growth of InAs Quantum Dots on GaAs driven by As kinetics 397
Palladium clusters on graphite: evidence of resonant hybryd states in the valence and conduction bands 393
Manipulating surface diffusion and elastic interactions to obtain Quantum Dot Multilayer arrangements over different length scales 392
Iron disilicide growth on Si(111): a scanning tunneling microscopy investigation 391
Temperature dependence of the size distribution function of InAs quantum dots on GaAs(001) 391
Surface states at the GaAs(001)2X4 surface 389
Electronic properties of laser-deposited Bi2Sr2CaCu2O8+delta thin films by x-ray photoemission and x-ray Auger spectroscopies 388
Reflection high energy electron diffraction observation of surface mass transport at the two- to three-dimensional growth transition of InAs on GaAs(001) 387
Electronic structure of epitaxial beta-FeSi2 on Si (111) 385
Study of laser-deposited Bi2Sr2CaCu2O8+delta thin films by Rutheford backscattering,x-ray photoemission and x-ray Auger spectroscopy 383
Reactivity of the Bi2Sr2CaCu2O8 and Bi1.7Pb0.3Sr2CaCu2O8 surfaces for d-metal overlayers 382
Electronic structure of YBa2Cu3O7-delta and Bi2Sr2CaCu2O8+delta by x-ray photoemission and Auger spectroscopies 382
Morphology of self-assembled quantum dots of InAs on GaAs(001) and Ge 0n Si(111) 382
Electronic structure studies of high-temperature superconductors 378
High Tc-superconductor surface and interfaces by XPS and STM spectroscopies 375
InAs epitaxy on GaAs(001): a model case of strain-driven self-assembling of quantum dots 375
In-line correlation and ordering of InAs/GaAs multistacked Quantum Dots structures 375
Nanocose 3 372
Bremsstrahlung-isochromat-spectroscopy and x-ray-photoelectron-spectroscopy investigation of the electronic structure of -FeSi2 and the Fe/Si(111) interface 370
Role of As in the anisotropic positioning of self-assembled InAs quantum dots 369
Growth of Ge-Si(111) epitaxial layers: intermixing, strain relaxation and island formation 368
Sudden nucleation versus scale invariance of InAs quantum dots on GaAs 367
Strain-engineered arrays of InAs quantum dots on GaAs(001): Epitaxial growth and modeling 363
Tuning the growth for a selective nucleation of chains of Quantum Dots behaving as single photon emitters 347
EELFS INVESTIGATION OF YBA2CU3O7-DELTA THIN-FILMS AND SINTERED SAMPLES 346
Electronic structure and charge fluctuations in YBa2Cu3O7 from EELS, XPS and Auger spectroscopies 346
Metal-interface formation on cleaved and etched single-crystal surfaces of Bi2Sr2CaCu2O8 343
Energy loss study of the electronic structure of YBa2Cu3O7-delta high Tc superconductor 333
Gallium Arsenide detectors for underground physics 328
Stress-determined nucleation sites above GaAs-capped arrays of InAs quantum dots 319
Totale 39.772
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Categoria #
all - tutte 79.639
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 79.639
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022938 0 132 69 65 56 82 49 36 49 73 39 288
2022/20231.314 125 72 24 207 116 296 91 84 128 0 126 45
2023/2024408 57 10 25 7 41 167 3 27 1 6 6 58
2024/20252.479 87 423 197 112 33 50 147 168 207 95 561 399
2025/20262.690 211 197 278 225 226 89 291 359 364 201 95 154
2026/2027177 73 104 0 0 0 0 0 0 0 0 0 0
Totale 39.772