IRIS
PATELLA, FULVIA
 Distribuzione geografica
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Continente #
NA - Nord America 32.892
AS - Asia 3.217
EU - Europa 2.646
SA - Sud America 350
AF - Africa 33
Continente sconosciuto - Info sul continente non disponibili 7
OC - Oceania 5
Totale 39.150
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Nazione #
US - Stati Uniti d'America 32.811
SG - Singapore 1.963
CN - Cina 520
DE - Germania 488
UA - Ucraina 488
RU - Federazione Russa 347
BR - Brasile 306
IE - Irlanda 299
IT - Italia 269
HK - Hong Kong 218
SE - Svezia 210
VN - Vietnam 181
GB - Regno Unito 176
FR - Francia 129
FI - Finlandia 116
JP - Giappone 99
KR - Corea 93
CA - Canada 58
IN - India 32
PL - Polonia 30
BD - Bangladesh 21
BE - Belgio 18
UZ - Uzbekistan 18
ES - Italia 15
NL - Olanda 14
AR - Argentina 12
IQ - Iraq 12
CZ - Repubblica Ceca 11
ZA - Sudafrica 11
EC - Ecuador 10
TR - Turchia 9
MX - Messico 8
AT - Austria 7
JM - Giamaica 6
MY - Malesia 6
RO - Romania 6
SA - Arabia Saudita 6
IL - Israele 5
KG - Kirghizistan 5
KZ - Kazakistan 5
VE - Venezuela 5
CL - Cile 4
CO - Colombia 4
EG - Egitto 4
EU - Europa 4
KE - Kenya 4
MD - Moldavia 4
PH - Filippine 4
AU - Australia 3
CH - Svizzera 3
IR - Iran 3
PE - Perù 3
PK - Pakistan 3
PT - Portogallo 3
TN - Tunisia 3
A2 - ???statistics.table.value.countryCode.A2??? 2
BB - Barbados 2
BO - Bolivia 2
CI - Costa d'Avorio 2
DM - Dominica 2
DO - Repubblica Dominicana 2
DZ - Algeria 2
GR - Grecia 2
HR - Croazia 2
ID - Indonesia 2
LB - Libano 2
LT - Lituania 2
MA - Marocco 2
NZ - Nuova Zelanda 2
PY - Paraguay 2
SV - El Salvador 2
TH - Thailandia 2
UY - Uruguay 2
AE - Emirati Arabi Uniti 1
AL - Albania 1
AM - Armenia 1
BY - Bielorussia 1
CY - Cipro 1
DK - Danimarca 1
EE - Estonia 1
ET - Etiopia 1
HU - Ungheria 1
JO - Giordania 1
KW - Kuwait 1
LU - Lussemburgo 1
MU - Mauritius 1
NG - Nigeria 1
NO - Norvegia 1
NP - Nepal 1
PR - Porto Rico 1
SD - Sudan 1
SN - Senegal 1
SY - Repubblica araba siriana 1
TW - Taiwan 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 39.150
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Città #
Woodbridge 10.398
Wilmington 8.662
Houston 7.379
Ann Arbor 882
Fairfield 780
Singapore 691
Ashburn 490
Jacksonville 453
Chandler 452
Seattle 324
Dublin 270
Cambridge 262
Beijing 253
San Jose 240
Hong Kong 214
Medford 200
Dearborn 177
New York 154
Santa Clara 124
The Dalles 108
Council Bluffs 93
Lawrence 93
Mülheim 85
Los Angeles 70
Tokyo 66
Rome 59
Ho Chi Minh City 53
Menlo Park 51
Moscow 49
Buffalo 48
San Mateo 48
Boardman 43
Hanoi 43
San Diego 43
São Paulo 35
Milan 34
University Park 27
Dallas 25
Hangzhou 24
Helsinki 21
Mountain View 20
Toronto 20
Norwalk 19
Brussels 18
Guangzhou 18
Munich 18
London 17
Hefei 16
Kraków 16
Redwood City 15
Verona 15
Atlanta 14
Lauterbourg 14
Saint-jérôme 13
Washington 13
Nanjing 12
Saint Petersburg 12
Brno 11
Chicago 11
Indiana 11
Orem 11
Zhengzhou 11
Warsaw 10
Falls Church 9
Redondo Beach 9
Auburn Hills 8
Frankfurt am Main 8
San Francisco 8
Tappahannock 8
Campinas 7
Dhaka 7
Palo Alto 7
Porto Alegre 7
Rio de Janeiro 7
Baghdad 6
Belo Horizonte 6
Da Nang 6
Haiphong 6
Nanchang 6
Nürnberg 6
Stockholm 6
Vienna 6
Amsterdam 5
Curitiba 5
Elk Grove Village 5
Johannesburg 5
Montreal 5
Poplar 5
Redmond 5
Salvador 5
Shenyang 5
Tashkent 5
Turku 5
Vancouver 5
Bolzano Vicentino 4
Brantford 4
Chennai 4
Chisinau 4
Cuiabá 4
Druento 4
Totale 34.075
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Nome #
The Unexpected Role of Arsenic in Driving the Selective Growth of InAs Quantum Dots on GaAs 599
Palladium clusters on graphite: a Bremsstrahlung Isochromat Spectroscopy study 586
Valence charge fluctuations in YBa2Cu3O7-delta from core level spectroscopies 566
Interface formation between d metals and the Bi2Sr2CaCu2O8 surface 554
Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001) 540
Probing the electronic properties of As-rich reconstructed surfaces of GaAs(001) by Electron Energy Loss Spectroscopy 539
2D Voronoi tessellation generated by lines and belts of dots 509
Electronic anisotropy of the GaAs(001) surface studied by energy loss spectroscopy 489
XPS and STM study of Mn incorporation on the GaAs(001) surface 486
Scaling law and dynamical exponent in the Volmer-Weber growth mode: silver on GaAs(001)2 x 4 470
Step erosion during nucleation of InAsGaAs (001) quantum dots 467
Structural study of the InAs quantum-dot nucleation on GaAs(001) 464
Anisotropy of the GaAs(001)-beta 2(2x4) surface from high-resolution electron energy loss spectroscopy 457
X-ray-photoemission-spectroscopy study of the surface deterioration of Bi2Sr2CaCu2O8 and Bi1.7Pb0.3Sr2CaCu2O8 single crystals at 26 K 454
Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy 452
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 451
Adsorption of molecular oxygen on GaAs(001) studied using high-resolution electron energy-loss spectroscopy 451
Coarsening effect on island-size scaling: The model case InAs/GaAs(001) 450
Electronic correlations in YBa2Cu3O7-delta from Auger spectroscopy 449
Etch pits and tunnel barrier in chemically etched YBa2Cu3O7-[delta] crystals by scanning tunneling microscopy 445
Dynamic behavior of silver islands growing on GaAs(001)2X4 substrate 445
The GaAS(001)-c(4x4) surface: a new perspective from energy loss spectra 436
Correlation effects on the L3VV Auger line shape of Cd1-xMnxTe 436
Core level spectroscopy in YBa2Cu3O7-delta: Electronic structure versus oxygen stoichiometry 435
Characterization of beta-FeSi2 and the Fe/Si(111) interface by electronic spectroscopies 435
Selective growth of InAs quantum dots on SiO2-masked GaAs 434
Morphology of self-assembled InAs quantum dots on GaAs(001) 433
Anisotropic cation diffusion in the GaAs capping of InAs/GaAs(001) quantum dots 433
Comparative study of Ag growth on GaAs(001) and (110) surfaces 432
InAs/GaAs(001) epitaxy: Kinetic effects in the two-dimensional to three-dimensional transition 432
Inx Ga(1-x)As quantum dots grown on GaAs studied by EXAFS in total reflection mode (ReflEXAFS) 430
Electron energy loss study of Ag- and Au-GaAs(110) interfaces 430
Local order in silicon - germanium alloys and at silicon - germanium heterojunctions by analysis of Ge 3d core levels 429
Angular dependence of the oxygen K-edge fine structure in electron-energy loss spectra of Bi2-xPbxSr2CaCu2O8 428
The influence of the wetting layer morphology on the nucleation and the evolution of InAs/GaAs (001) Quantum Dots 427
MgO(100) structural investigations using EELFS and EXFAS techniques 426
Role of patterning in islands nucleation on semiconductor surfaces 425
Amorphous Si/Ge heterojunctions: Band discontinuities and local order studied by photoemission spectroscopy 425
Modelling of the reactive interface formation on Bi2Sr2CaCu2O8 425
How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs/GaAs(001) 425
Morphological instabilities of the InAs/GaAs(001) interface and their effect on the self-assembling of InAs quantum-dot arrays 423
Characterization of real surfaces of superconductor materials by x-ray photoemission and x-ray Auger spectroscopies 423
Morphology of the Fe, Cr and Ge/Bi2Sr2CaCu2O8 reactive interfaces from XPS and STM analyses 422
Scaling behavior of GaAs and GaMnAs quantum rings grown by droplet epitaxy 421
Core excitons in amorphous semiconductors 420
I fenomeni fisici e chimici irreversibili: La diffusione 419
Observation of interface states by high-resolution electron-energy-loss spectroscopy in metal-GaAs(110) junctions 418
Single QD emission from arrays of QD chains obtained by patterning-free method 418
Self-assembly of InAs and Si/Ge quantum dots on structured surfaces 417
Auger study of the electronic correlations in YBa2Cu3O7-delta 416
Core-level changes induced by oxygen in YBa2Cu3O7- 414
Microscopic aspects of the Fe/Bi2Sr2CaCu2O8 reactive interface 407
Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth 407
The InAs/GaAs(001) Quantum Dots Transition: Advances on Understanding 406
Bremsstrahlung Isochromat Spectroscopy (BIS)study of Pd clusters on graphite. 404
Comparative study of low temperature growth of InAs and InMnAs quantum dots 404
Kinetically Driven Selective Growth of InAs Quantum Dots on GaAs 401
Surface versus bulk contributions from reflectance anisotropy and electron energy loss spectra of the GaAs(001)-c(4x4) surface 400
The monitoring of 2d-3d transition for InAs/GaAs (001) self-assembled quantum dots by atomic force microscopy 400
BIS and XPS investigations of the electronic structure of beta-FeSi2 and Fe/Si (111) interface 399
Single quantum dot emission by nanoscale selective growth of InAs on GaAs: A bottom-up approach 398
Detection of hydrogen induced Schottky barrier modulation in Pd/SiO x/a-Si:H diodes by photoemission with synchrotron radiation 398
Kinetic aspects of the morphology of self-assembled InAs quantum dots on GaAs(001) 396
Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth 396
Selective Growth of InAs Quantum Dots on GaAs driven by As kinetics 395
Palladium clusters on graphite: evidence of resonant hybryd states in the valence and conduction bands 391
Iron disilicide growth on Si(111): a scanning tunneling microscopy investigation 388
Temperature dependence of the size distribution function of InAs quantum dots on GaAs(001) 388
Manipulating surface diffusion and elastic interactions to obtain Quantum Dot Multilayer arrangements over different length scales 387
Electronic properties of laser-deposited Bi2Sr2CaCu2O8+delta thin films by x-ray photoemission and x-ray Auger spectroscopies 385
Surface states at the GaAs(001)2X4 surface 383
Reflection high energy electron diffraction observation of surface mass transport at the two- to three-dimensional growth transition of InAs on GaAs(001) 382
Reactivity of the Bi2Sr2CaCu2O8 and Bi1.7Pb0.3Sr2CaCu2O8 surfaces for d-metal overlayers 380
Electronic structure of YBa2Cu3O7-delta and Bi2Sr2CaCu2O8+delta by x-ray photoemission and Auger spectroscopies 380
Electronic structure of epitaxial beta-FeSi2 on Si (111) 379
Study of laser-deposited Bi2Sr2CaCu2O8+delta thin films by Rutheford backscattering,x-ray photoemission and x-ray Auger spectroscopy 377
Electronic structure studies of high-temperature superconductors 376
Morphology of self-assembled quantum dots of InAs on GaAs(001) and Ge 0n Si(111) 375
InAs epitaxy on GaAs(001): a model case of strain-driven self-assembling of quantum dots 373
In-line correlation and ordering of InAs/GaAs multistacked Quantum Dots structures 372
High Tc-superconductor surface and interfaces by XPS and STM spectroscopies 371
Nanocose 3 368
Bremsstrahlung-isochromat-spectroscopy and x-ray-photoelectron-spectroscopy investigation of the electronic structure of -FeSi2 and the Fe/Si(111) interface 367
Growth of Ge-Si(111) epitaxial layers: intermixing, strain relaxation and island formation 361
Sudden nucleation versus scale invariance of InAs quantum dots on GaAs 360
Role of As in the anisotropic positioning of self-assembled InAs quantum dots 360
Strain-engineered arrays of InAs quantum dots on GaAs(001): Epitaxial growth and modeling 358
EELFS INVESTIGATION OF YBA2CU3O7-DELTA THIN-FILMS AND SINTERED SAMPLES 344
Tuning the growth for a selective nucleation of chains of Quantum Dots behaving as single photon emitters 343
Electronic structure and charge fluctuations in YBa2Cu3O7 from EELS, XPS and Auger spectroscopies 341
Metal-interface formation on cleaved and etched single-crystal surfaces of Bi2Sr2CaCu2O8 339
Energy loss study of the electronic structure of YBa2Cu3O7-delta high Tc superconductor 328
Gallium Arsenide detectors for underground physics 325
Stress-determined nucleation sites above GaAs-capped arrays of InAs quantum dots 317
Totale 39.319
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Categoria #
all - tutte 75.511
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 75.511
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021390 0 0 0 0 0 0 0 0 0 85 220 85
2021/2022962 24 132 69 65 56 82 49 36 49 73 39 288
2022/20231.314 125 72 24 207 116 296 91 84 128 0 126 45
2023/2024408 57 10 25 7 41 167 3 27 1 6 6 58
2024/20252.479 87 423 197 112 33 50 147 168 207 95 561 399
2025/20262.414 211 197 278 225 226 89 291 359 364 174 0 0
Totale 39.319