The effect of the As flux on the kinetics of Ga and In cations, and the role of the elastic strain were studied in the capping process of isolated InAs quantum dots with GaAs by molecular beam epitaxy. Using a fixed evaporation geometry and a suitable choice of growth parameters which enhance the anisotropic diffusion of In and Ga cations, we obtained, at variance with current results, the formation of asymmetric GaAs caps. The growth of a second InAs layer led to the formation of vertically aligned couples of dots (one buried, the other uncapped) placed on the right side of the GaAs caps on the surface, with no other dots in different locations.

TISBI, E., LATINI, V., PATELLA, F., Placidi, E., & ARCIPRETE, F. (2016). Anisotropic cation diffusion in the GaAs capping of InAs/GaAs(001) quantum dots. JOURNAL OF APPLIED PHYSICS, 120(23), 235303 [10.1063/1.4972033].

Anisotropic cation diffusion in the GaAs capping of InAs/GaAs(001) quantum dots

TISBI, ELISA;LATINI, VALERIO;PATELLA, FULVIA;ARCIPRETE, FABRIZIO
2016

Abstract

The effect of the As flux on the kinetics of Ga and In cations, and the role of the elastic strain were studied in the capping process of isolated InAs quantum dots with GaAs by molecular beam epitaxy. Using a fixed evaporation geometry and a suitable choice of growth parameters which enhance the anisotropic diffusion of In and Ga cations, we obtained, at variance with current results, the formation of asymmetric GaAs caps. The growth of a second InAs layer led to the formation of vertically aligned couples of dots (one buried, the other uncapped) placed on the right side of the GaAs caps on the surface, with no other dots in different locations.
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/03 - Fisica della Materia
eng
Con Impact Factor ISI
Physics and Astronomy (all)
http://scitation.aip.org/content/aip/journal/jap
TISBI, E., LATINI, V., PATELLA, F., Placidi, E., & ARCIPRETE, F. (2016). Anisotropic cation diffusion in the GaAs capping of InAs/GaAs(001) quantum dots. JOURNAL OF APPLIED PHYSICS, 120(23), 235303 [10.1063/1.4972033].
Tisbi, E; Latini, V; Patella, F; Placidi, E; Arciprete, F
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/189778
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