We present a study of the heterojunctions formed when Ge is deposited onto a variety of atomically clean Si-based amorphous substrates. With the use of synchrotron-radiation photoemission spectroscopy we are able to measure the valence-band discontinuities and also probe the local order at the interface. We find that linear theories of band discontinuities are valid to an accuracy of 0.2 eV for these materials. © 1988 The American Physical Society.
Cimino, R., Boscherini, F., Evangelisti, F., Patella, F., Perfetti, P., & Quaresima, C. (1988). Amorphous Si/Ge heterojunctions: Band discontinuities and local order studied by photoemission spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER, 37(3), 1199-1204.
Tipologia: | Articolo su rivista |
Citazione: | Cimino, R., Boscherini, F., Evangelisti, F., Patella, F., Perfetti, P., & Quaresima, C. (1988). Amorphous Si/Ge heterojunctions: Band discontinuities and local order studied by photoemission spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER, 37(3), 1199-1204. |
Lingua: | English |
Settore Scientifico Disciplinare: | Settore FIS/03 - Fisica della Materia |
Revisione (peer review): | Sì, ma tipo non specificato |
Tipo: | Articolo |
Rilevanza: | Rilevanza internazionale |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1103/PhysRevB.37.1199 |
Stato di pubblicazione: | Pubblicato |
Data di pubblicazione: | 1988 |
Titolo: | Amorphous Si/Ge heterojunctions: Band discontinuities and local order studied by photoemission spectroscopy |
Autori: | |
Autori: | Cimino, R; Boscherini, F; Evangelisti, F; Patella, F; Perfetti, P; Quaresima, C |
Appare nelle tipologie: | 01 - Articolo su rivista |