We present a study of the heterojunctions formed when Ge is deposited onto a variety of atomically clean Si-based amorphous substrates. With the use of synchrotron-radiation photoemission spectroscopy we are able to measure the valence-band discontinuities and also probe the local order at the interface. We find that linear theories of band discontinuities are valid to an accuracy of 0.2 eV for these materials. © 1988 The American Physical Society.

Cimino, R., Boscherini, F., Evangelisti, F., Patella, F., Perfetti, P., Quaresima, C. (1988). Amorphous Si/Ge heterojunctions: Band discontinuities and local order studied by photoemission spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER, 37(3), 1199-1204 [10.1103/PhysRevB.37.1199].

Amorphous Si/Ge heterojunctions: Band discontinuities and local order studied by photoemission spectroscopy

PATELLA, FULVIA;
1988

Abstract

We present a study of the heterojunctions formed when Ge is deposited onto a variety of atomically clean Si-based amorphous substrates. With the use of synchrotron-radiation photoemission spectroscopy we are able to measure the valence-band discontinuities and also probe the local order at the interface. We find that linear theories of band discontinuities are valid to an accuracy of 0.2 eV for these materials. © 1988 The American Physical Society.
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/03 - Fisica della Materia
English
Cimino, R., Boscherini, F., Evangelisti, F., Patella, F., Perfetti, P., Quaresima, C. (1988). Amorphous Si/Ge heterojunctions: Band discontinuities and local order studied by photoemission spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER, 37(3), 1199-1204 [10.1103/PhysRevB.37.1199].
Cimino, R; Boscherini, F; Evangelisti, F; Patella, F; Perfetti, P; Quaresima, C
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/45267
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