Single and two-layer InAs/GaAs(001) samples were grown in a Molecular Beam Epitaxy chamber under critical conditions, leading to the selective growth of self-assembled InAs Quantum Dot chains over mounded GaAs surfaces. Changing the thickness of the spacer layer and the InAs deposition made it possible to tune the nucleation of 2-fold or single chains in the second layer. Finite Element Method simulations evidenced the major role of the strain field in favoring the formation of single stacked chains. On the other hand, tuning properly the As4/In flux ratio contributed to improving the QD ordering along the chains. Microphotoluminescence experiments demonstrated single photon emission properties of the observed QDs. Our growth approach did not degrade the optical quality of the InAs QDs, allowing a significant spatial correlation between the QDs aligned along the chain.

LATINI, V., TISBI, E., Placidi, E., PATELLA, F., Biccari, F., Gurioli, M., et al. (2017). Tuning the growth for a selective nucleation of chains of Quantum Dots behaving as single photon emitters. JOURNAL OF CRYSTAL GROWTH, 457, 177-183 [10.1016/j.jcrysgro.2016.06.045].

Tuning the growth for a selective nucleation of chains of Quantum Dots behaving as single photon emitters

LATINI, VALERIO;TISBI, ELISA;PATELLA, FULVIA;ARCIPRETE, FABRIZIO
2017

Abstract

Single and two-layer InAs/GaAs(001) samples were grown in a Molecular Beam Epitaxy chamber under critical conditions, leading to the selective growth of self-assembled InAs Quantum Dot chains over mounded GaAs surfaces. Changing the thickness of the spacer layer and the InAs deposition made it possible to tune the nucleation of 2-fold or single chains in the second layer. Finite Element Method simulations evidenced the major role of the strain field in favoring the formation of single stacked chains. On the other hand, tuning properly the As4/In flux ratio contributed to improving the QD ordering along the chains. Microphotoluminescence experiments demonstrated single photon emission properties of the observed QDs. Our growth approach did not degrade the optical quality of the InAs QDs, allowing a significant spatial correlation between the QDs aligned along the chain.
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/03 - Fisica della Materia
eng
Con Impact Factor ISI
A1. Low dimensional structures; A3. Molecular Beam Epitaxy; A3. Selective epitaxy; B2. Semiconducting III–V materials; Condensed Matter Physics; Inorganic Chemistry; Materials Chemistry2506 Metals and Alloys
http://www.journals.elsevier.com/journal-of-crystal-growth/
LATINI, V., TISBI, E., Placidi, E., PATELLA, F., Biccari, F., Gurioli, M., et al. (2017). Tuning the growth for a selective nucleation of chains of Quantum Dots behaving as single photon emitters. JOURNAL OF CRYSTAL GROWTH, 457, 177-183 [10.1016/j.jcrysgro.2016.06.045].
Latini, V; Tisbi, E; Placidi, E; Patella, F; Biccari, F; Gurioli, M; Vinattieri, A; Arciprete, F
Articolo su rivista
File in questo prodotto:
File Dimensione Formato  
JCG_457_177_(2016).pdf

non disponibili

Licenza: Copyright dell'editore
Dimensione 4.91 MB
Formato Adobe PDF
4.91 MB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/189774
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 2
  • ???jsp.display-item.citation.isi??? 2
social impact