IRIS

Core excitonic effects at the L2,3 absorption edge were investigated with a combination of optical and synchrotron-radiation photoemission techniques in crystalline, amorphous, and amorphous-hydrogenated silicon and silicon-carbon alloys. Our results support a Frenkel-type nature of these excitons. © 1984 The American Physical Society.

Evangelisti, F., Patella, F., Riedel, R., Margaritondo, G., Fiorini, P., Perfetti, P., et al. (1984). Core excitons in amorphous semiconductors. PHYSICAL REVIEW LETTERS, 53(26), 2504-2507 [10.1103/PhysRevLett.53.2504].

Core excitons in amorphous semiconductors

PATELLA, FULVIA;
1984-01-01

Abstract

Core excitonic effects at the L2,3 absorption edge were investigated with a combination of optical and synchrotron-radiation photoemission techniques in crystalline, amorphous, and amorphous-hydrogenated silicon and silicon-carbon alloys. Our results support a Frenkel-type nature of these excitons. © 1984 The American Physical Society.
1984
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/03 - FISICA DELLA MATERIA
English
Con Impact Factor ISI
amorphous silicon
Evangelisti, F., Patella, F., Riedel, R., Margaritondo, G., Fiorini, P., Perfetti, P., et al. (1984). Core excitons in amorphous semiconductors. PHYSICAL REVIEW LETTERS, 53(26), 2504-2507 [10.1103/PhysRevLett.53.2504].
Evangelisti, F; Patella, F; Riedel, R; Margaritondo, G; Fiorini, P; Perfetti, P; Quaresima, C
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/45357
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