The selective growth of InAs quantum dot chains self-ordered at mesoscopic distances on a rippled GaAs(001) substrate is obtained by tuning the direction of the As flux at high temperature and high As/In flux ratio Microphotoluminescence experiments demonstrate that such isolated quantum dot chains show single quantum dot emission properties.
Placidi, E., Arciprete, F., Sarti, F., Gurioli, M., Vinattieri, A., Patella, F. (2015). Single QD emission from arrays of QD chains obtained by patterning-free method. ADVANCED DEVICE MATERIALS, 1(1), 33-37 [http://dx.doi.org/10.1179/2055031614Y.0000000007].
Single QD emission from arrays of QD chains obtained by patterning-free method
ARCIPRETE, FABRIZIO;PATELLA, FULVIA
2015-01-01
Abstract
The selective growth of InAs quantum dot chains self-ordered at mesoscopic distances on a rippled GaAs(001) substrate is obtained by tuning the direction of the As flux at high temperature and high As/In flux ratio Microphotoluminescence experiments demonstrate that such isolated quantum dot chains show single quantum dot emission properties.File in questo prodotto:
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