The Pd/SiOx/a-Si:H hydrogen sensor has been investigated by photoemission spectroscopy with synchrotron radiation. We measured directly the valence-band discontinuity and the built-in potential during the first stage of formation of the interface obtained by depositing thin amorphous silicon overlayers on Pd/SiOx substrates. Changes of the interface parameters were measured after hydrogen exposure and subsequent hydrogen removal with oxygen. Hydrogen sensitivity is related to hydrogen induced Schottky barrier modulation.
Fortunato, G., D'Amico, A., Coluzza, C., Sette, F., Capasso, C., Patella, F., et al. (1984). Detection of hydrogen induced Schottky barrier modulation in Pd/SiO x/a-Si:H diodes by photoemission with synchrotron radiation. APPLIED PHYSICS LETTERS, 44(9), 887-889 [10.1063/1.94967].
Detection of hydrogen induced Schottky barrier modulation in Pd/SiO x/a-Si:H diodes by photoemission with synchrotron radiation
PATELLA, FULVIA;
1984-01-01
Abstract
The Pd/SiOx/a-Si:H hydrogen sensor has been investigated by photoemission spectroscopy with synchrotron radiation. We measured directly the valence-band discontinuity and the built-in potential during the first stage of formation of the interface obtained by depositing thin amorphous silicon overlayers on Pd/SiOx substrates. Changes of the interface parameters were measured after hydrogen exposure and subsequent hydrogen removal with oxygen. Hydrogen sensitivity is related to hydrogen induced Schottky barrier modulation.Questo articolo è pubblicato sotto una Licenza Licenza Creative Commons
