IRIS
CICCOGNANI, WALTER
 Distribuzione geografica
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Continente #
NA - Nord America 58.327
AS - Asia 7.454
EU - Europa 5.633
SA - Sud America 897
AF - Africa 91
Continente sconosciuto - Info sul continente non disponibili 26
OC - Oceania 11
Totale 72.439
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Nazione #
US - Stati Uniti d'America 58.094
SG - Singapore 3.354
CN - Cina 1.738
IT - Italia 1.107
RU - Federazione Russa 858
BR - Brasile 765
UA - Ucraina 677
IE - Irlanda 602
DE - Germania 600
HK - Hong Kong 561
VN - Vietnam 516
FR - Francia 414
GB - Regno Unito 320
KR - Corea 287
JP - Giappone 280
SE - Svezia 271
PL - Polonia 216
FI - Finlandia 205
BD - Bangladesh 188
IN - India 169
CA - Canada 129
NL - Olanda 107
ES - Italia 71
MX - Messico 61
TW - Taiwan 56
AR - Argentina 52
TR - Turchia 52
ZA - Sudafrica 40
CZ - Repubblica Ceca 38
ID - Indonesia 38
IQ - Iraq 38
EC - Ecuador 28
BE - Belgio 23
EU - Europa 21
AT - Austria 20
LT - Lituania 19
AE - Emirati Arabi Uniti 18
SA - Arabia Saudita 18
OM - Oman 17
RO - Romania 15
CH - Svizzera 14
MA - Marocco 14
PK - Pakistan 14
UZ - Uzbekistan 14
CL - Cile 13
CO - Colombia 13
IR - Iran 11
MY - Malesia 11
NP - Nepal 11
JM - Giamaica 10
PH - Filippine 10
TN - Tunisia 10
AU - Australia 9
JO - Giordania 9
VE - Venezuela 9
KE - Kenya 7
PE - Perù 7
TH - Thailandia 7
AL - Albania 6
IL - Israele 6
TT - Trinidad e Tobago 6
EG - Egitto 5
GR - Grecia 5
MD - Moldavia 5
PY - Paraguay 5
AZ - Azerbaigian 4
BG - Bulgaria 4
CR - Costa Rica 4
DZ - Algeria 4
HN - Honduras 4
KZ - Kazakistan 4
LB - Libano 4
NO - Norvegia 4
PA - Panama 4
PT - Portogallo 4
UY - Uruguay 4
AO - Angola 3
BS - Bahamas 3
BY - Bielorussia 3
CY - Cipro 3
DO - Repubblica Dominicana 3
HU - Ungheria 3
KG - Kirghizistan 3
LV - Lettonia 3
NI - Nicaragua 3
PS - Palestinian Territory 3
RS - Serbia 3
SI - Slovenia 3
SK - Slovacchia (Repubblica Slovacca) 3
SV - El Salvador 3
XK - ???statistics.table.value.countryCode.XK??? 3
A2 - ???statistics.table.value.countryCode.A2??? 2
BA - Bosnia-Erzegovina 2
BH - Bahrain 2
DK - Danimarca 2
HR - Croazia 2
MT - Malta 2
NZ - Nuova Zelanda 2
SN - Senegal 2
AM - Armenia 1
Totale 72.420
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Città #
Wilmington 15.121
Woodbridge 14.453
Houston 14.344
Singapore 1.614
Fairfield 1.511
Ann Arbor 1.175
Ashburn 1.103
Chandler 1.045
San Jose 959
Beijing 694
Seattle 623
Jacksonville 574
Dublin 570
Hong Kong 551
Cambridge 493
Rome 425
Medford 413
Los Angeles 329
New York 310
Chicago 287
Dearborn 284
Santa Clara 268
Tokyo 249
The Dalles 241
Lawrence 192
Zhengzhou 186
Moscow 165
Ho Chi Minh City 160
Kraków 160
Buffalo 141
Salt Lake City 137
Hanoi 126
Lauterbourg 124
Menlo Park 118
Council Bluffs 101
Dallas 92
São Paulo 81
San Diego 77
Elk Grove Village 72
Nanjing 72
Mülheim 69
Tampa 69
London 67
Milan 66
Orem 62
Helsinki 55
Redondo Beach 55
Shanghai 52
Munich 49
Montreal 48
Amsterdam 44
Warsaw 42
Brooklyn 40
Redwood City 38
Chennai 37
Frankfurt am Main 37
Suzhou 37
Boardman 36
Miami 35
Toronto 35
Denver 34
Hangzhou 34
Sterling 34
Norwalk 31
Atlanta 30
Cedarhurst 30
Guangzhou 29
Phoenix 29
Kunming 28
Naples 28
Chongqing 27
Nuremberg 27
Hefei 26
San Francisco 26
Seoul 26
Taipei 26
Monte Vista 25
Stockholm 25
Boston 24
Johannesburg 24
Rio de Janeiro 24
Brussels 23
San Mateo 23
Lancaster 22
University Park 22
Poplar 21
Da Nang 20
Manchester 20
Verona 20
Grottaferrata 19
Jakarta 19
Mexico City 19
Saint Petersburg 18
Ankara 17
Torrejón de Ardoz 17
Belo Horizonte 16
Dulles 16
Falls Church 16
Haiphong 16
Las Vegas 16
Totale 61.560
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Nome #
Miniaturized superconducting filter realized by using dual mode and stepped resonators 532
QV band receiver converter for satellite communications 531
V2O5 MISFETs on H-Terminated Diamond 504
Beam forming network GaAs modules radioastronomy focal plane Arrays 500
GaN device technology: Manufacturing, characterization, modelling and verification 489
14.8-MeV Neutron Irradiation on H-Terminated Diamond-Based MESFETs 489
GaN LNAs for Robust Receiving Systems in Radar and Space Applications 488
Millimeter wave low noise amplifier for satellite and radio astronomy applications 487
Miniaturized superconducting filter realized by using dual mode and stepped resonators integrated with a LNA 486
T/R modules front-end integration in GaN technology 485
A C-Band MMIC chipset for phase and amplitude modulation 484
A GaAs front-end receiver for radioastronomy applicationsx 478
H-Terminated Diamond MISFETs with V2O5 as Insulator 475
Development of GaN based MMIC for next generation X-Band space SAR T/R module 474
High power microstrip GaN-HEMT switches for microwave applications 473
A new test bench to measure dynamic output I/V Characteristics of FETs 468
Constant mismatch circles and application to low noise microwave amplifier design 466
GaAs cryo cooled LNA for C-Band radioastronomy applications 464
Characterization and modelling of 40 nm mHEMT process up to 110 GHz 463
Compensating for parasitic phase shift in microwave digitally controlled attenuators 462
Gate-source distance scaling effects in H-terminated diamond MESFETs 462
UWB propagation measurements by PN-sequence channel sounding 461
Closed-form noise parameters of a transmission line under thermal gradients 461
AM/AM and AM/PM power amplifier characterisation technique 456
An ultra-broadband robust LNA for defence applications in AlGaN/GaN technology 456
A new structure for the design of dual band power amplifiers 456
A reflection-type biphase modulator with balanced loads 455
Automated Extraction of Device Noise Parameters Based on Multi-Frequency, Source- Pull Data 455
An Active Non-Reciprocal Phase Shifter Topology 452
MMIC LNAs for radioastronomy applications using advanced industrial 70 nm metamorphic technology 451
K-Band Diamond MESFETs for RFIC Technology 451
Polynomial noise modeling of Silicon based GaN HEMTs 451
GaN-on-silicon evaluation for high-power MMIC applications 450
High spectral purity X- to W-band active GaAs monolithic frequency multiplier 450
Black-box noise modeling of GaAs HEMTs under illumination 448
50 to 20 GHz ultra low noise receiver/converter 447
Analysis, design and measurement of active low-noise terminations 446
GaAs MMIC chipset for focal-plane arrays 445
Compensating digital attenuator differential phase shift 442
An EM-based approach to model a gallium nitride HEMT in a custom common-gate configuration 439
13-bit GaAs serial to parallel converter with compact layout for core-chip applications 438
Modeling of metal-semiconductor field-effect-transistor on H- terminated polycrystalline diamond 437
Verifying Rollett's proviso on active devices under arbitrary passive embeddings 435
RF power performance of submicron MESFET on hydrogen terminated polycrystalline diamond 434
Broadband Nonreciprocal Phase Shifter Design Technique 434
High-isolation microstrip GaN HEMT single-FET switch 433
Robust GaN MMIC chipset for T/R module front-end integration 431
Microelettronica a radio frequenza per applicazioni spaziali 430
Noise measure-based design methodology for simultaneously matched multi-stage LNAs 430
Modeling of diamond field-effect transistors for RF IC development 425
Characterization and modeling of low-cost, high-performance GaN/Si technology 425
A Simple Test to Check the Inherent-Stability Proviso on Field-Effect Transistors 425
Microwave operation of sub-Micrometer gate surface channel MESFETs in polycrystalline diamond 424
Numerical determination of coaxial cable parameters in cryogenic environments for high-frequency active device noise modeling 423
MESFETs on H-terminated polycrystalline diamond 420
Robust GaN MMIC Chipset for T/R Module Front-End Integration 420
Multi–harmonic matching network for active triplers 419
High power GaN-HEMT SPDT switches for Microwave applications 418
Advanced PHEMT GaAs E/D technology, modeling and characterisation 418
Harmonic matching design for triplers 416
Developments on PHAROS 416
Microwave Operation of Sub-Micrometer Gate Surface Channel MESFETs in Polycrystalline Diamond 413
Fabrication and Performance of Microwave Diamond Devices for Space Applications 413
Design and measurement of an active cold-load 412
Cold-source cryogenic characterization and modeling of a mHEMT process 411
A compact high performance X–band core-chip with on board serial-to-parallel conversion 409
Highly reliable characterization approaches oriented to active device noise modeling 409
Scalable gate two EBL steps fabrication process for optimal high frequency GaN HEMT performances 409
Low noise performances of scalable sub-quarter-micron GaN HEMT with Field Plate technology 409
Evaluation of coaxial cable performance under thermal gradients 408
Source/load-pull noise measurements at ka band 408
Towards the Realization of a Single-Chip Front-End in GaN Technology 407
Compact GaAs HEMT D flip-flop for the integration of a SAR MMIC core-chip digital control logic 406
H-Terminated single-crystal diamond FETs for space applications 405
MMIC LNAs for radioastronomy applications using advanced industrial 70 nm metamorphic technology 403
Robust LNA in GaN Technology 403
High-power monolithic AlGaN/GaN HEMT switch for X-band applications 402
Design and implementation of ambient RF energy harvesting circuits 402
A Measurement-Based Approach to Model Scaling Properties of FETs 402
Extraction of microwave FET noise parameters using frequency-dependent equivalent noise temperatures 400
A Monolithic Variable Load for Application in Source-Pull Noise Measurements 400
Time domain propagation measurements of the UWB indoor channel using PN-sequence in the FCC-compliant band 3.6-6 GHz 400
RF Energy Harvesting for DVB-T Signals 399
Determining optimum load impedance for a noisy active 2-port network 398
A C-Band MMIC chipset for phase and amplitude modulation 398
GaAs MMICs for a C-Band FPA 398
GaN transistor characterisation and modelling activities performed within the frame of the KorriGaN project 397
Diamond MESFET technology development for microwave integrated circuits 397
“GaN-based robust low noise amplifiers 397
Design of On-Wafer LRRM calibration kit for characterization and modeling of MESFET on H-terminated diamond 392
A Novel Approach to Minimize RMS Errors in Multi-Functional Chips 392
UWB Channel Model Report 392
Microelettronica a radiofrequenza per applicazioni spaziali 391
GaN/AlGaN HEMTs for RF applications 390
The role of path loss on the selection of the operating bands of UWB systems 390
High-density Mixed Signal RF Front-End Electronics for T-R Modules 389
Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators 389
Design and Implementation of Ambient RF Energy Harvesting Circuits 388
Realization and measurements of an RF energy harvesting circuit operating on several DVB-T channels 387
High performance X-band LNAs using a 0.25 μm GaN technology 387
Totale 43.285
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Categoria #
all - tutte 171.376
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 171.376
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.099 70 268 52 115 108 139 87 97 201 189 151 622
2022/20232.727 344 236 102 279 240 622 209 198 258 25 138 76
2023/20241.025 106 49 74 54 98 257 58 50 15 47 40 177
2024/20256.124 188 1.055 515 262 56 296 381 219 327 431 1.153 1.241
2025/20268.642 712 456 941 671 883 214 924 1.079 1.021 885 416 440
2026/20275 5 0 0 0 0 0 0 0 0 0 0 0
Totale 73.359