IRIS
CICCOGNANI, WALTER
 Distribuzione geografica
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Continente #
NA - Nord America 57.858
AS - Asia 7.247
EU - Europa 5.498
SA - Sud America 891
AF - Africa 91
Continente sconosciuto - Info sul continente non disponibili 26
OC - Oceania 11
Totale 71.622
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Nazione #
US - Stati Uniti d'America 57.642
SG - Singapore 3.341
CN - Cina 1.710
IT - Italia 991
RU - Federazione Russa 857
BR - Brasile 763
UA - Ucraina 677
IE - Irlanda 602
DE - Germania 600
HK - Hong Kong 560
VN - Vietnam 510
FR - Francia 409
GB - Regno Unito 319
KR - Corea 286
JP - Giappone 273
SE - Svezia 271
PL - Polonia 215
FI - Finlandia 205
IN - India 168
CA - Canada 118
NL - Olanda 101
ES - Italia 69
MX - Messico 61
TW - Taiwan 55
AR - Argentina 51
BD - Bangladesh 51
TR - Turchia 50
ZA - Sudafrica 40
CZ - Repubblica Ceca 38
IQ - Iraq 38
ID - Indonesia 36
EC - Ecuador 28
BE - Belgio 23
EU - Europa 21
AT - Austria 20
LT - Lituania 19
OM - Oman 17
SA - Arabia Saudita 17
AE - Emirati Arabi Uniti 16
RO - Romania 15
CH - Svizzera 14
MA - Marocco 14
PK - Pakistan 14
UZ - Uzbekistan 14
CO - Colombia 13
CL - Cile 11
IR - Iran 11
NP - Nepal 11
TN - Tunisia 10
AU - Australia 9
JO - Giordania 9
PH - Filippine 9
VE - Venezuela 9
MY - Malesia 8
KE - Kenya 7
AL - Albania 6
IL - Israele 6
JM - Giamaica 6
PE - Perù 6
TH - Thailandia 6
TT - Trinidad e Tobago 6
EG - Egitto 5
PY - Paraguay 5
AZ - Azerbaigian 4
BG - Bulgaria 4
CR - Costa Rica 4
DZ - Algeria 4
GR - Grecia 4
HN - Honduras 4
KZ - Kazakistan 4
LB - Libano 4
MD - Moldavia 4
NO - Norvegia 4
PA - Panama 4
UY - Uruguay 4
AO - Angola 3
BS - Bahamas 3
BY - Bielorussia 3
CY - Cipro 3
DO - Repubblica Dominicana 3
HU - Ungheria 3
KG - Kirghizistan 3
LV - Lettonia 3
NI - Nicaragua 3
PS - Palestinian Territory 3
PT - Portogallo 3
RS - Serbia 3
SI - Slovenia 3
SK - Slovacchia (Repubblica Slovacca) 3
XK - ???statistics.table.value.countryCode.XK??? 3
A2 - ???statistics.table.value.countryCode.A2??? 2
BA - Bosnia-Erzegovina 2
BH - Bahrain 2
DK - Danimarca 2
HR - Croazia 2
MT - Malta 2
NZ - Nuova Zelanda 2
SN - Senegal 2
SV - El Salvador 2
AM - Armenia 1
Totale 71.604
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Città #
Wilmington 15.121
Woodbridge 14.452
Houston 14.344
Singapore 1.608
Fairfield 1.511
Ann Arbor 1.175
Ashburn 1.069
Chandler 1.045
San Jose 787
Beijing 692
Seattle 620
Jacksonville 573
Dublin 570
Hong Kong 550
Cambridge 493
Medford 413
Rome 413
Los Angeles 308
Dearborn 284
New York 283
Chicago 281
Santa Clara 260
Tokyo 249
The Dalles 241
Lawrence 192
Zhengzhou 186
Moscow 165
Kraków 160
Ho Chi Minh City 159
Salt Lake City 137
Buffalo 133
Hanoi 125
Lauterbourg 124
Menlo Park 118
Dallas 90
Council Bluffs 82
São Paulo 81
San Diego 77
Elk Grove Village 72
Nanjing 72
Mülheim 69
Tampa 67
London 66
Orem 62
Helsinki 55
Redondo Beach 55
Milan 53
Shanghai 51
Munich 49
Montreal 47
Amsterdam 44
Warsaw 42
Brooklyn 39
Redwood City 38
Chennai 37
Frankfurt am Main 37
Boardman 36
Suzhou 36
Hangzhou 34
Sterling 34
Miami 33
Denver 32
Atlanta 30
Cedarhurst 30
Norwalk 30
Toronto 30
Guangzhou 29
Phoenix 29
Kunming 28
Chongqing 27
Nuremberg 27
Hefei 26
Seoul 26
Taipei 26
Stockholm 25
Johannesburg 24
Rio de Janeiro 24
San Francisco 24
Boston 23
Brussels 23
Lancaster 22
San Mateo 22
University Park 22
Poplar 21
Da Nang 20
Manchester 20
Verona 20
Grottaferrata 19
Jakarta 19
Mexico City 19
Naples 18
Saint Petersburg 18
Torrejón de Ardoz 17
Ankara 16
Belo Horizonte 16
Dulles 16
Falls Church 16
Haiphong 16
North Bergen 16
Lappeenranta 15
Totale 61.180
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Nome #
Miniaturized superconducting filter realized by using dual mode and stepped resonators 532
QV band receiver converter for satellite communications 528
Beam forming network GaAs modules radioastronomy focal plane Arrays 500
V2O5 MISFETs on H-Terminated Diamond 500
14.8-MeV Neutron Irradiation on H-Terminated Diamond-Based MESFETs 489
GaN device technology: Manufacturing, characterization, modelling and verification 487
Millimeter wave low noise amplifier for satellite and radio astronomy applications 487
GaN LNAs for Robust Receiving Systems in Radar and Space Applications 487
Miniaturized superconducting filter realized by using dual mode and stepped resonators integrated with a LNA 486
A C-Band MMIC chipset for phase and amplitude modulation 483
T/R modules front-end integration in GaN technology 478
A GaAs front-end receiver for radioastronomy applicationsx 476
High power microstrip GaN-HEMT switches for microwave applications 472
H-Terminated Diamond MISFETs with V2O5 as Insulator 471
Development of GaN based MMIC for next generation X-Band space SAR T/R module 467
Constant mismatch circles and application to low noise microwave amplifier design 464
A new test bench to measure dynamic output I/V Characteristics of FETs 461
Compensating for parasitic phase shift in microwave digitally controlled attenuators 461
GaAs cryo cooled LNA for C-Band radioastronomy applications 461
Characterization and modelling of 40 nm mHEMT process up to 110 GHz 460
UWB propagation measurements by PN-sequence channel sounding 459
Closed-form noise parameters of a transmission line under thermal gradients 457
AM/AM and AM/PM power amplifier characterisation technique 456
Gate-source distance scaling effects in H-terminated diamond MESFETs 456
An ultra-broadband robust LNA for defence applications in AlGaN/GaN technology 455
A reflection-type biphase modulator with balanced loads 455
A new structure for the design of dual band power amplifiers 454
Automated Extraction of Device Noise Parameters Based on Multi-Frequency, Source- Pull Data 452
K-Band Diamond MESFETs for RFIC Technology 451
An Active Non-Reciprocal Phase Shifter Topology 451
Polynomial noise modeling of Silicon based GaN HEMTs 450
MMIC LNAs for radioastronomy applications using advanced industrial 70 nm metamorphic technology 449
GaN-on-silicon evaluation for high-power MMIC applications 449
High spectral purity X- to W-band active GaAs monolithic frequency multiplier 449
Black-box noise modeling of GaAs HEMTs under illumination 447
50 to 20 GHz ultra low noise receiver/converter 447
Analysis, design and measurement of active low-noise terminations 446
GaAs MMIC chipset for focal-plane arrays 442
Compensating digital attenuator differential phase shift 441
An EM-based approach to model a gallium nitride HEMT in a custom common-gate configuration 437
Modeling of metal-semiconductor field-effect-transistor on H- terminated polycrystalline diamond 435
RF power performance of submicron MESFET on hydrogen terminated polycrystalline diamond 434
13-bit GaAs serial to parallel converter with compact layout for core-chip applications 434
Verifying Rollett's proviso on active devices under arbitrary passive embeddings 434
High-isolation microstrip GaN HEMT single-FET switch 432
Robust GaN MMIC chipset for T/R module front-end integration 430
Broadband Nonreciprocal Phase Shifter Design Technique 429
Noise measure-based design methodology for simultaneously matched multi-stage LNAs 427
Microelettronica a radio frequenza per applicazioni spaziali 426
Microwave operation of sub-Micrometer gate surface channel MESFETs in polycrystalline diamond 424
Modeling of diamond field-effect transistors for RF IC development 423
Characterization and modeling of low-cost, high-performance GaN/Si technology 423
A Simple Test to Check the Inherent-Stability Proviso on Field-Effect Transistors 422
Numerical determination of coaxial cable parameters in cryogenic environments for high-frequency active device noise modeling 421
MESFETs on H-terminated polycrystalline diamond 419
Robust GaN MMIC Chipset for T/R Module Front-End Integration 419
Advanced PHEMT GaAs E/D technology, modeling and characterisation 418
Multi–harmonic matching network for active triplers 417
High power GaN-HEMT SPDT switches for Microwave applications 415
Harmonic matching design for triplers 415
Developments on PHAROS 414
Microwave Operation of Sub-Micrometer Gate Surface Channel MESFETs in Polycrystalline Diamond 412
Fabrication and Performance of Microwave Diamond Devices for Space Applications 411
Design and measurement of an active cold-load 410
Scalable gate two EBL steps fabrication process for optimal high frequency GaN HEMT performances 409
Highly reliable characterization approaches oriented to active device noise modeling 408
Cold-source cryogenic characterization and modeling of a mHEMT process 408
A compact high performance X–band core-chip with on board serial-to-parallel conversion 407
Evaluation of coaxial cable performance under thermal gradients 407
Compact GaAs HEMT D flip-flop for the integration of a SAR MMIC core-chip digital control logic 405
H-Terminated single-crystal diamond FETs for space applications 405
Low noise performances of scalable sub-quarter-micron GaN HEMT with Field Plate technology 405
MMIC LNAs for radioastronomy applications using advanced industrial 70 nm metamorphic technology 403
Towards the Realization of a Single-Chip Front-End in GaN Technology 403
High-power monolithic AlGaN/GaN HEMT switch for X-band applications 401
Design and implementation of ambient RF energy harvesting circuits 401
Robust LNA in GaN Technology 401
A Measurement-Based Approach to Model Scaling Properties of FETs 401
Extraction of microwave FET noise parameters using frequency-dependent equivalent noise temperatures 399
A Monolithic Variable Load for Application in Source-Pull Noise Measurements 399
RF Energy Harvesting for DVB-T Signals 399
Determining optimum load impedance for a noisy active 2-port network 397
Diamond MESFET technology development for microwave integrated circuits 397
“GaN-based robust low noise amplifiers 397
Time domain propagation measurements of the UWB indoor channel using PN-sequence in the FCC-compliant band 3.6-6 GHz 397
A C-Band MMIC chipset for phase and amplitude modulation 396
GaAs MMICs for a C-Band FPA 396
GaN transistor characterisation and modelling activities performed within the frame of the KorriGaN project 395
Design of On-Wafer LRRM calibration kit for characterization and modeling of MESFET on H-terminated diamond 392
A Novel Approach to Minimize RMS Errors in Multi-Functional Chips 392
Source/load-pull noise measurements at ka band 392
Microelettronica a radiofrequenza per applicazioni spaziali 390
UWB Channel Model Report 390
GaN/AlGaN HEMTs for RF applications 389
High-density Mixed Signal RF Front-End Electronics for T-R Modules 388
The role of path loss on the selection of the operating bands of UWB systems 387
Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators 387
Realization and measurements of an RF energy harvesting circuit operating on several DVB-T channels 386
High performance X-band LNAs using a 0.25 μm GaN technology 385
S-Band GaN Single-Chip Front End for Active Electronically Scanned Array With 40-W Output Power and 1.75-dB Noise Figure 384
Totale 43.095
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Categoria #
all - tutte 165.178
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 165.178
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021430 0 0 0 0 0 0 0 0 0 0 323 107
2021/20222.099 70 268 52 115 108 139 87 97 201 189 151 622
2022/20232.727 344 236 102 279 240 622 209 198 258 25 138 76
2023/20241.025 106 49 74 54 98 257 58 50 15 47 40 177
2024/20256.124 188 1.055 515 262 56 296 381 219 327 431 1.153 1.241
2025/20267.821 712 456 941 671 883 214 924 1.079 1.021 885 35 0
Totale 72.533