CICCOGNANI, WALTER
 Distribuzione geografica
Continente #
NA - Nord America 61.613
AS - Asia 7.635
EU - Europa 5.951
Continente sconosciuto - Info sul continente non disponibili 972
SA - Sud America 958
AF - Africa 97
OC - Oceania 12
Totale 77.238
Nazione #
US - Stati Uniti d'America 61.114
SG - Singapore 3.365
CN - Cina 1.754
IT - Italia 1.294
RU - Federazione Russa 862
BR - Brasile 793
UA - Ucraina 678
DE - Germania 612
IE - Irlanda 604
HK - Hong Kong 566
VN - Vietnam 521
FR - Francia 419
GB - Regno Unito 346
SE - Svezia 323
JP - Giappone 288
KR - Corea 288
BD - Bangladesh 267
CA - Canada 222
PL - Polonia 216
FI - Finlandia 205
IN - India 177
NL - Olanda 115
ES - Italia 80
MX - Messico 64
AR - Argentina 59
TW - Taiwan 59
TR - Turchia 55
ID - Indonesia 46
ZA - Sudafrica 41
IQ - Iraq 39
CZ - Repubblica Ceca 38
CR - Costa Rica 36
EC - Ecuador 32
JM - Giamaica 30
CO - Colombia 29
BE - Belgio 24
TT - Trinidad e Tobago 24
NI - Nicaragua 22
PR - Porto Rico 22
EU - Europa 21
LT - Lituania 21
SA - Arabia Saudita 21
AE - Emirati Arabi Uniti 20
AT - Austria 20
CW - ???statistics.table.value.countryCode.CW??? 18
PK - Pakistan 18
GT - Guatemala 17
OM - Oman 17
SV - El Salvador 17
PH - Filippine 16
MY - Malesia 15
RO - Romania 15
CH - Svizzera 14
CL - Cile 14
HN - Honduras 14
MA - Marocco 14
UZ - Uzbekistan 14
VE - Venezuela 14
NP - Nepal 12
IR - Iran 11
AU - Australia 10
GP - Guadalupe 10
TH - Thailandia 10
TN - Tunisia 10
CY - Cipro 9
JO - Giordania 9
IL - Israele 8
KE - Kenya 8
PE - Perù 7
AL - Albania 6
PA - Panama 6
DK - Danimarca 5
EE - Estonia 5
EG - Egitto 5
GR - Grecia 5
KZ - Kazakistan 5
MD - Moldavia 5
PY - Paraguay 5
AZ - Azerbaigian 4
BG - Bulgaria 4
BS - Bahamas 4
DZ - Algeria 4
LB - Libano 4
NO - Norvegia 4
PT - Portogallo 4
UY - Uruguay 4
AO - Angola 3
BA - Bosnia-Erzegovina 3
BB - Barbados 3
BY - Bielorussia 3
DO - Repubblica Dominicana 3
HU - Ungheria 3
KG - Kirghizistan 3
LV - Lettonia 3
PS - Palestinian Territory 3
RS - Serbia 3
SI - Slovenia 3
SK - Slovacchia (Repubblica Slovacca) 3
XK - ???statistics.table.value.countryCode.XK??? 3
A2 - ???statistics.table.value.countryCode.A2??? 2
Totale 76.273
Città #
Wilmington 15.121
Woodbridge 14.453
Houston 14.348
Ashburn 1.689
Singapore 1.618
Fairfield 1.511
Ann Arbor 1.176
San Jose 1.171
Chandler 1.045
Beijing 704
Seattle 627
Jacksonville 581
Dublin 570
Hong Kong 555
Cambridge 496
Rome 453
Medford 414
Los Angeles 361
New York 332
Council Bluffs 326
Chicago 302
Santa Clara 300
Dearborn 284
Tokyo 254
The Dalles 244
Lawrence 193
Zhengzhou 186
Moscow 165
Ho Chi Minh City 160
Kraków 160
Buffalo 149
Salt Lake City 148
Hanoi 129
Lauterbourg 124
Menlo Park 118
Dallas 107
São Paulo 90
Milan 87
San Diego 81
Denver 78
Tampa 74
Elk Grove Village 72
Nanjing 72
Mülheim 69
London 68
Orem 62
Montreal 61
Redondo Beach 56
Helsinki 55
Brooklyn 52
Shanghai 52
Munich 51
Miami 50
Toronto 50
Phoenix 47
Amsterdam 46
North Bergen 46
Atlanta 42
Naples 42
Warsaw 42
Chennai 41
Redwood City 38
Boardman 37
Frankfurt am Main 37
Suzhou 37
Hangzhou 34
Sterling 34
San Francisco 33
Norwalk 31
Cedarhurst 30
San José 30
Guangzhou 29
Kunming 28
Boston 27
Chongqing 27
Nuremberg 27
Taipei 27
Hefei 26
Seoul 26
Johannesburg 25
Monte Vista 25
Stockholm 25
Brussels 24
Manchester 24
Rio de Janeiro 24
San Mateo 23
Washington 23
Lancaster 22
Las Vegas 22
University Park 22
Verona 22
Newark 21
Poplar 21
Da Nang 20
Managua 20
Grottaferrata 19
Jakarta 19
Mexico City 19
Bologna 18
Charlotte 18
Totale 63.074
Nome #
QV band receiver converter for satellite communications 549
Miniaturized superconducting filter realized by using dual mode and stepped resonators 545
V2O5 MISFETs on H-Terminated Diamond 519
Beam forming network GaAs modules radioastronomy focal plane Arrays 513
A C-Band MMIC chipset for phase and amplitude modulation 512
14.8-MeV Neutron Irradiation on H-Terminated Diamond-Based MESFETs 507
Miniaturized superconducting filter realized by using dual mode and stepped resonators integrated with a LNA 506
GaN LNAs for Robust Receiving Systems in Radar and Space Applications 505
GaN device technology: Manufacturing, characterization, modelling and verification 503
T/R modules front-end integration in GaN technology 502
Millimeter wave low noise amplifier for satellite and radio astronomy applications 500
A GaAs front-end receiver for radioastronomy applicationsx 494
Development of GaN based MMIC for next generation X-Band space SAR T/R module 494
H-Terminated Diamond MISFETs with V2O5 as Insulator 494
Gate-source distance scaling effects in H-terminated diamond MESFETs 488
High power microstrip GaN-HEMT switches for microwave applications 485
Constant mismatch circles and application to low noise microwave amplifier design 484
Characterization and modelling of 40 nm mHEMT process up to 110 GHz 482
A new test bench to measure dynamic output I/V Characteristics of FETs 480
Compensating for parasitic phase shift in microwave digitally controlled attenuators 480
GaAs cryo cooled LNA for C-Band radioastronomy applications 480
Closed-form noise parameters of a transmission line under thermal gradients 477
UWB propagation measurements by PN-sequence channel sounding 476
High spectral purity X- to W-band active GaAs monolithic frequency multiplier 469
A new structure for the design of dual band power amplifiers 467
50 to 20 GHz ultra low noise receiver/converter 467
AM/AM and AM/PM power amplifier characterisation technique 466
An ultra-broadband robust LNA for defence applications in AlGaN/GaN technology 466
K-Band Diamond MESFETs for RFIC Technology 464
A reflection-type biphase modulator with balanced loads 464
Automated Extraction of Device Noise Parameters Based on Multi-Frequency, Source- Pull Data 464
GaN-on-silicon evaluation for high-power MMIC applications 463
Black-box noise modeling of GaAs HEMTs under illumination 463
An Active Non-Reciprocal Phase Shifter Topology 463
Polynomial noise modeling of Silicon based GaN HEMTs 462
MMIC LNAs for radioastronomy applications using advanced industrial 70 nm metamorphic technology 460
An EM-based approach to model a gallium nitride HEMT in a custom common-gate configuration 457
Analysis, design and measurement of active low-noise terminations 456
GaAs MMIC chipset for focal-plane arrays 454
Verifying Rollett's proviso on active devices under arbitrary passive embeddings 453
Microelettronica a radio frequenza per applicazioni spaziali 451
Compensating digital attenuator differential phase shift 451
13-bit GaAs serial to parallel converter with compact layout for core-chip applications 451
Modeling of metal-semiconductor field-effect-transistor on H- terminated polycrystalline diamond 448
Noise measure-based design methodology for simultaneously matched multi-stage LNAs 448
Broadband Nonreciprocal Phase Shifter Design Technique 446
RF power performance of submicron MESFET on hydrogen terminated polycrystalline diamond 445
Developments on PHAROS 445
Robust GaN MMIC chipset for T/R module front-end integration 444
High-isolation microstrip GaN HEMT single-FET switch 440
A Simple Test to Check the Inherent-Stability Proviso on Field-Effect Transistors 440
Characterization and modeling of low-cost, high-performance GaN/Si technology 438
Advanced PHEMT GaAs E/D technology, modeling and characterisation 437
Modeling of diamond field-effect transistors for RF IC development 437
RF Energy Harvesting for DVB-T Signals 437
Robust GaN MMIC Chipset for T/R Module Front-End Integration 435
Numerical determination of coaxial cable parameters in cryogenic environments for high-frequency active device noise modeling 435
Microwave operation of sub-Micrometer gate surface channel MESFETs in polycrystalline diamond 433
High power GaN-HEMT SPDT switches for Microwave applications 433
MESFETs on H-terminated polycrystalline diamond 431
Multi–harmonic matching network for active triplers 431
Scalable gate two EBL steps fabrication process for optimal high frequency GaN HEMT performances 430
Towards the Realization of a Single-Chip Front-End in GaN Technology 428
Design and measurement of an active cold-load 426
Source/load-pull noise measurements at ka band 426
Harmonic matching design for triplers 424
Fabrication and Performance of Microwave Diamond Devices for Space Applications 424
Cold-source cryogenic characterization and modeling of a mHEMT process 424
Microwave Operation of Sub-Micrometer Gate Surface Channel MESFETs in Polycrystalline Diamond 423
Highly reliable characterization approaches oriented to active device noise modeling 422
Low noise performances of scalable sub-quarter-micron GaN HEMT with Field Plate technology 422
A compact high performance X–band core-chip with on board serial-to-parallel conversion 421
A Monolithic Variable Load for Application in Source-Pull Noise Measurements 419
Evaluation of coaxial cable performance under thermal gradients 419
Compact GaAs HEMT D flip-flop for the integration of a SAR MMIC core-chip digital control logic 418
High-power monolithic AlGaN/GaN HEMT switch for X-band applications 417
MMIC LNAs for radioastronomy applications using advanced industrial 70 nm metamorphic technology 417
A Measurement-Based Approach to Model Scaling Properties of FETs 416
Design and implementation of ambient RF energy harvesting circuits 415
Diamond MESFET technology development for microwave integrated circuits 413
Determining optimum load impedance for a noisy active 2-port network 412
Design of On-Wafer LRRM calibration kit for characterization and modeling of MESFET on H-terminated diamond 412
H-Terminated single-crystal diamond FETs for space applications 412
“GaN-based robust low noise amplifiers 411
Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators 411
A C-Band MMIC chipset for phase and amplitude modulation 409
GaN transistor characterisation and modelling activities performed within the frame of the KorriGaN project 408
GaAs MMICs for a C-Band FPA 408
High-density Mixed Signal RF Front-End Electronics for T-R Modules 408
Time domain propagation measurements of the UWB indoor channel using PN-sequence in the FCC-compliant band 3.6-6 GHz 408
Robust LNA in GaN Technology 408
GaN LNAs for Robust Receiving Systems in Radar and Space Applications 408
Extraction of microwave FET noise parameters using frequency-dependent equivalent noise temperatures 407
Front-end criogenici per array di piano focale in applicazioni di radioastronomia 407
GaN/AlGaN HEMTs for RF applications 407
A Novel Approach to Minimize RMS Errors in Multi-Functional Chips 407
Microelettronica a radiofrequenza per applicazioni spaziali 406
Enhancing the cooling capabilities of a cryogenic probe station for on-wafer calibration and measurement at high frequency 405
Design and Implementation of Ambient RF Energy Harvesting Circuits 404
MMIC Millimeter-Wave Front-End Electronics 402
Totale 44.753
Categoria #
all - tutte 185.296
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 185.296


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.709 0 0 0 115 108 139 87 97 201 189 151 622
2022/20232.727 344 236 102 279 240 622 209 198 258 25 138 76
2023/20241.025 106 49 74 54 98 257 58 50 15 47 40 177
2024/20256.124 188 1.055 515 262 56 296 381 219 327 431 1.153 1.241
2025/20268.642 712 456 941 671 883 214 924 1.079 1.021 885 416 440
2026/20273.884 483 534 1.745 1.122 0 0 0 0 0 0 0 0
Totale 77.238