The present contribution summarizes the activities performed towards the realization of a Single-Chip Front-End (SCFE) operating in C Band, integrating the High Power, Low Noise amplification and switching functionalities to be provided in modern T/R modules' Front-Ends for space SAR applications. The technologies adopted in this project are provided by United Monolithic Semiconductors (UMS) and Selex Electronic Systems (SLX), the GH25-10 0.25 µm gate length and the GaN technology featured by 0.5 µm gate length for UMS and SLX respectively. At the completion of the design phase two SCFEs have been designed in the two technologies, each in two slightly different versions, featured by state-of-the-art performance. In particular, in Tx-mode, both are featured by approximately 40 W power output, with 36 dB large-signal gain and 38 % / 27 % PAE for UMS and SLX versions respectively, while in Rx-mode 2.5 dB noise figure resulted, with robust operation. The two dies are featured by 6.9 × 5.4 mm2 and 7.28 × 5.40 mm2 for UMS and SLX versions respectively.

Limiti, E., Ciccognani, W., Cipriani, E., Colangeli, S., Colantonio, P., Palomba, M., et al. (2015). T/R modules front-end integration in GaN technology. In 2015 IEEE 16th Annual Wireless and Microwave Technology Conference (WAMICON) (pp.1-6). IEEE [10.1109/WAMICON.2015.7120435].

T/R modules front-end integration in GaN technology

LIMITI, ERNESTO;CICCOGNANI, WALTER;CIPRIANI, ELISA;COLANGELI, SERGIO;COLANTONIO, PAOLO;PALOMBA, MIRKO;
2015-01-01

Abstract

The present contribution summarizes the activities performed towards the realization of a Single-Chip Front-End (SCFE) operating in C Band, integrating the High Power, Low Noise amplification and switching functionalities to be provided in modern T/R modules' Front-Ends for space SAR applications. The technologies adopted in this project are provided by United Monolithic Semiconductors (UMS) and Selex Electronic Systems (SLX), the GH25-10 0.25 µm gate length and the GaN technology featured by 0.5 µm gate length for UMS and SLX respectively. At the completion of the design phase two SCFEs have been designed in the two technologies, each in two slightly different versions, featured by state-of-the-art performance. In particular, in Tx-mode, both are featured by approximately 40 W power output, with 36 dB large-signal gain and 38 % / 27 % PAE for UMS and SLX versions respectively, while in Rx-mode 2.5 dB noise figure resulted, with robust operation. The two dies are featured by 6.9 × 5.4 mm2 and 7.28 × 5.40 mm2 for UMS and SLX versions respectively.
2015 16th IEEE Annual Wireless and Microwave Technology Conference, WAMICON 2015
usa
2015
16
Rilevanza internazionale
contributo
2015
Settore ING-INF/01 - ELETTRONICA
English
Front-end; GaN; Single-chip; T/R module;
Front-End; GaN; single-chip; T/R module; Gallium nitride; noise; switches
Intervento a convegno
Limiti, E., Ciccognani, W., Cipriani, E., Colangeli, S., Colantonio, P., Palomba, M., et al. (2015). T/R modules front-end integration in GaN technology. In 2015 IEEE 16th Annual Wireless and Microwave Technology Conference (WAMICON) (pp.1-6). IEEE [10.1109/WAMICON.2015.7120435].
Limiti, E; Ciccognani, W; Cipriani, E; Colangeli, S; Colantonio, P; Palomba, M; Florian, C; Pirola, M; Ayllon, N
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/113934
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 28
  • ???jsp.display-item.citation.isi??? 1
social impact