On the bases of the RF characteristics and measured small-signal parameters, an equivalent circuit model is formulated and characterized for Metal-Semiconductor Field Effect Transistors based on H-terminated polycrystalline diamond. Starting from on-wafer measurements, a bias dependent transistor behavior representation has been fully determinated. Such a equivalent circuit model is a first important step in order to realize an RF IC based on diamond.
Pasciuto, B., Ciccognani, W., Limiti, E., Calvani, P., Rossi, M.C., & Conte, G. (2009). Modeling of metal-semiconductor field-effect-transistor on H- terminated polycrystalline diamond. In Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009 (pp.261-264). NEW YORK : IEEE.
Autori: | |
Autori: | Pasciuto, B; Ciccognani, W; Limiti, E; Calvani, P; Rossi, MC; Conte, G |
Titolo: | Modeling of metal-semiconductor field-effect-transistor on H- terminated polycrystalline diamond |
Nome del convegno: | 10th International Conference on Ultimate Integration on Silicon |
Luogo del convegno: | Aachen, GERMANY |
Anno del convegno: | MAR 18-20, 2009 |
Enti collegati al convegno: | IEEE, Elect Devices Soc, IEEE, Julich, JARA FIT, Aachen Univ, Nanosil, Oxford Instruments, Aixtron, Centrotherm, oerlikon syst |
Rilevanza: | Rilevanza internazionale |
Sezione: | contributo |
???metadata.dc.date.created???: | 2009-03 |
Data di pubblicazione: | mar-2009 |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/ULIS.2009.4897586 |
Settore Scientifico Disciplinare: | Settore ING-INF/01 - Elettronica |
Lingua: | English |
Altre informazioni significative: | 4 |
Tipologia: | Intervento a convegno |
Citazione: | Pasciuto, B., Ciccognani, W., Limiti, E., Calvani, P., Rossi, M.C., & Conte, G. (2009). Modeling of metal-semiconductor field-effect-transistor on H- terminated polycrystalline diamond. In Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009 (pp.261-264). NEW YORK : IEEE. |
Appare nelle tipologie: | 02 - Intervento a convegno |