On the bases of the RF characteristics and measured small-signal parameters, an equivalent circuit model is formulated and characterized for Metal-Semiconductor Field Effect Transistors based on H-terminated polycrystalline diamond. Starting from on-wafer measurements, a bias dependent transistor behavior representation has been fully determinated. Such a equivalent circuit model is a first important step in order to realize an RF IC based on diamond.

Pasciuto, B., Ciccognani, W., Limiti, E., Calvani, P., Rossi, M.C., & Conte, G. (2009). Modeling of metal-semiconductor field-effect-transistor on H- terminated polycrystalline diamond. In Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009 (pp.261-264). NEW YORK : IEEE [10.1109/ULIS.2009.4897586].

Modeling of metal-semiconductor field-effect-transistor on H- terminated polycrystalline diamond

CICCOGNANI, WALTER;LIMITI, ERNESTO;
2009-03

Abstract

On the bases of the RF characteristics and measured small-signal parameters, an equivalent circuit model is formulated and characterized for Metal-Semiconductor Field Effect Transistors based on H-terminated polycrystalline diamond. Starting from on-wafer measurements, a bias dependent transistor behavior representation has been fully determinated. Such a equivalent circuit model is a first important step in order to realize an RF IC based on diamond.
10th International Conference on Ultimate Integration on Silicon
Aachen, GERMANY
MAR 18-20, 2009
IEEE, Elect Devices Soc, IEEE, Julich, JARA FIT, Aachen Univ, Nanosil, Oxford Instruments, Aixtron, Centrotherm, oerlikon syst
Rilevanza internazionale
contributo
mar-2009
Settore ING-INF/01 - Elettronica
eng
Carbon based electronic; DC and RF performance; Device modeling; Device technology; Electrical characteristics; Semiconductor devices; Small-signal equivalent circuit; Wide band semiconductors
4
Intervento a convegno
Pasciuto, B., Ciccognani, W., Limiti, E., Calvani, P., Rossi, M.C., & Conte, G. (2009). Modeling of metal-semiconductor field-effect-transistor on H- terminated polycrystalline diamond. In Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009 (pp.261-264). NEW YORK : IEEE [10.1109/ULIS.2009.4897586].
Pasciuto, B; Ciccognani, W; Limiti, E; Calvani, P; Rossi, M; Conte, G
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/49747
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