The present work is focused on the modeling of the noise performance of GaAs HEMTs under laser illumination. The model is straightforwardly extracted by using a polynomial approximation of the noise correlation parameters without the need for determining an equivalent circuit representation. The validity of the model is confirmed by the observed good agreement between model simulations and noise measurements with and without light up to 26GHz.
Colangeli, S., Ciccognani, W., Limiti, E., Caddemi, A., Crupi, G. (2015). Black-box noise modeling of GaAs HEMTs under illumination. INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 28(6), 698-706 [10.1002/jnm.2056].
Black-box noise modeling of GaAs HEMTs under illumination
COLANGELI, SERGIO;CICCOGNANI, WALTER;LIMITI, ERNESTO;
2015-01-01
Abstract
The present work is focused on the modeling of the noise performance of GaAs HEMTs under laser illumination. The model is straightforwardly extracted by using a polynomial approximation of the noise correlation parameters without the need for determining an equivalent circuit representation. The validity of the model is confirmed by the observed good agreement between model simulations and noise measurements with and without light up to 26GHz.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
